High Frequency MOSFET Siliup SP13HF30TF 300V Super Junction with Fast Switching and Low Gate Charge
Price:
Negotiable
MOQ:
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Delivery Time:
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Product Description
Product Overview
The SP13HF30TF is a 300V Super-Junction MOSFET from Siliup Semiconductor Technology Co. Ltd. Designed for high-frequency applications, it features fast switching, low gate charge, and low Rdson. This MOSFET is 100% tested for single pulse avalanche energy and is suitable for PWM applications, hard-switched and high-frequency circuits, and power management systems. It comes in a TO-247 package.
Product Attributes
- Brand: Siliup Semiconductor Technology Co. Ltd.
- Product Code: SP13HF30TF
- Package Type: TO-247
Technical Specifications
| Parameter | Symbol | Test Condition | Min | Typ | Max | Unit |
|---|---|---|---|---|---|---|
| Product Summary | ||||||
| Drain Source Voltage | V(BR)DSS | 300 | V | |||
| RDS(on) | RDS(on) | @10V | 13 | m | ||
| Continuous Drain Current | ID | 125 | A | |||
| Absolute Maximum Ratings | ||||||
| Drain source voltage | VDS | 300 | V | |||
| Gate source voltage | VGS | 20 | V | |||
| Continuous drain current (Tc=25) | ID | 125 | A | |||
| Continuous drain current (Tc=100) | ID | 83 | A | |||
| Pulsed drain current | IDM | 380 | A | |||
| Single pulsed avalanche energy | EAS | 1332 | mJ | |||
| Power dissipation (Tc=25) | PD | 500 | W | |||
| Thermal resistance Junction-to-case | RJC | 0.25 | /W | |||
| Storage Temperature Range | TSTG | -55 | 150 | |||
| Operating Junction Temperature Range | TJ | -55 | 150 | |||
| Electrical Characteristics | ||||||
| Drain-Source Breakdown Voltage | BVDSS | VGS = 0V,ID = 250A | 300 | 350 | - | V |
| Drain Cut-Off Current | IDSS | VDS = 240V, VGS = 0V | - | - | 1 | A |
| Gate Leakage Current | IGSS | VGS = 20V, VDS = 0V | - | - | 0.1 | |
| Gate Threshold Voltage | VGS(th) | VDS = VGS, ID = 250A | 2.5 | 3.5 | 4.5 | V |
| Drain-Source ON Resistance | RDS(ON) | VGS = 10V, ID = 35A | - | 13 | 16 | m |
| Dynamic Characteristics | ||||||
| Input Capacitance | Ciss | VDS =50V, VGS = 0V, f = 1.0MHz | - | 5200 | - | pF |
| Output Capacitance | Coss | - | 340 | - | ||
| Reverse Transfer Capacitance | Crss | - | 6.5 | - | ||
| Switching Characteristics | ||||||
| Total Gate Charge | Qg | VDS=200V , VGS=10V , ID=40A | - | 85 | - | nC |
| Gate-Source Charge | Qgs | - | 26 | - | ||
| Gate-Drain Charge | Qgd | - | 22 | - | ||
| Turn-On Delay Time | td(on) | VGS = 10V, VDS = 200V, ID=40A , RG = 20 | - | 49 | - | nS |
| Rise Time | tr | - | 32 | - | ||
| Turn-Off Delay Time | td(off) | - | 82 | - | ||
| Fall Time | tf | - | 8 | - | ||
| Drain-Source Body Diode Characteristics | ||||||
| Diode Forward Voltage | VSD | VGS=0V , IS=1A , TJ=25 | - | - | 1.2 | V |
| Maximum Body-Diode Continuous Current | IS | - | - | 125 | A | |
| Reverse Recovery Time | Trr | VR=200V,IS=40A,di/dt=100A/us | - | 118 | - | nS |
| Reverse Recovery Charge | Qrr | - | 0.56 | - | uC | |
| TO-247 Package Information (Dimensions in Millimeters) | ||||
|---|---|---|---|---|
| Symbol | Min. | Max. | Inches Min. | Inches Max. |
| A | 4.850 | 5.150 | 0.191 | 0.200 |
| A1 | 2.200 | 2.600 | 0.087 | 0.102 |
| b | 1.000 | 1.400 | 0.039 | 0.055 |
| b1 | 2.800 | 3.200 | 0.110 | 0.126 |
| b2 | 1.800 | 2.200 | 0.071 | 0.087 |
| c | 0.500 | 0.700 | 0.020 | 0.028 |
| c1 | 1.900 | 2.100 | 0.075 | 0.083 |
| D | 15.450 | 15.750 | 0.608 | 0.620 |
| E1 | 3.500 REF. | 0.138 REF. | ||
| E2 | 3.600 REF. | 0.142 REF. | ||
| L | 40.900 | 41.300 | 1.610 | 1.626 |
| L1 | 24.800 | 25.100 | 0.976 | 0.988 |
| L2 | 20.300 | 20.600 | 0.799 | 0.811 |
| 7.100 | 7.300 | 0.280 | 0.287 | |
| e | 5.450 TYP. | 0.215 TYP. | ||
| H | 5.980 REF. | 0.235 REF. | ||
| h | 0.000 | 0.300 | 0.000 | 0.012 |
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