Power MOSFET N Channel 100V Siliup SP010N04BGNK Featuring Split Gate Trench Technology for Switching

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Product Description

Product Overview

The SP010N04BGNK is a 100V N-Channel Power MOSFET from Siliup Semiconductor Technology Co. Ltd. Engineered with advanced Split Gate Trench Technology, it offers fast switching speeds, low Gate Charge, and low RDS(on). This MOSFET is suitable for applications such as DC-DC Converters, Motor Control, and portable equipment. It features 100% Single Pulse avalanche energy testing for enhanced reliability.

Product Attributes

Brand: Siliup Semiconductor Technology Co. Ltd.
Product Code: SP010N04BGNK
Technology: Advanced Split Gate Trench Technology
Channel Type: N-Channel
Package: PDFN5X6-8L

Technical Specifications

Parameter	Symbol	Conditions	Min.	Typ.	Max.	Unit
Absolute Maximum Ratings (Ta=25, unless otherwise noted)
Drain-Source Voltage	VDSS				100	V
Gate-Source Voltage	VGSS				20	V
Continuous Drain Current (Tc=25C)	ID				100	A
Continuous Drain Current (Tc=100C)	ID				70	A
Pulse Drain Current Tested	IDM				400	A
Single pulsed avalanche energy	EAS				380	mJ
Power Dissipation (Tc=25C)	PD				150	W
Thermal Resistance Junction-to-Case	RJC				0.83	C/W
Storage Temperature Range	TSTG		-55		150	C
Operating Junction Temperature Range	TJ		-55		150	C
Electrical Characteristics (Ta=25, unless otherwise noted)
Drain-Source Breakdown Voltage	BVDSS	VGS=0V , ID=250uA	100	-	-	V
Drain-Source Leakage Current	IDSS	VDS=80V , VGS=0V , TJ=25	-	-	1	uA
Gate-Source Leakage Current	IGSS	VGS=20V , VDS=0V	-	-	100	nA
Gate Threshold Voltage	VGS(th)	VGS=VDS , ID =250uA	1.0	1.8	2.5	V
Static Drain-Source On-Resistance	RDS(ON)	VGS=10V , ID=30A	-	4.5	5.7	m
Static Drain-Source On-Resistance	RDS(ON)	VGS=4.5V , ID=20A	-	6	8	m
Dynamic Characteristics
Input Capacitance	Ciss	VDS=50V , VGS=0V , f=1MHz	-	2970	-	pF
Output Capacitance	Coss		-	1125	-	pF
Reverse Transfer Capacitance	Crss		-	24	-	pF
Total Gate Charge	Qg	VDS=50V , VGS=10V , ID=50A	-	42	-	nC
Gate-Source Charge	Qgs		-	27	-
Gate-Drain Charge	Qgd		-	7.3	-
Switching Characteristics
Turn-On Delay Time	Td(on)	VDD=50V , VGS=10V , RG=3 , ID=50A	-	12.1	-	nS
Rise Time	Tr		-	17.4	-
Turn-Off Delay Time	Td(off)		-	47	-
Fall Time	Tf		-	32	-
Diode Characteristics
Diode Forward Voltage	VSD	VGS=0V , IS=1A , TJ=25	-	-	1.2	V
Diode Continuous Current	IS		-	-	100	A
Reverse recover time	Trr	IS=50A, di/dt=100A/us, Tj=25	-	32	-	nS
Reverse recovery charge	Qrr		-	146	-	nC

PDFN5X6-8L Package Information
Symbol	Dimensions In Millimeters	Dimensions In Inches
A	0.900 - 1.000	0.035 - 0.039
A3	0.254REF.	0.010REF.
D	4.944 - 5.096	0.195 - 0.201
E	5.974 - 6.126	0.235 - 0.241
D1	3.910 - 4.110	0.154 - 0.162
E1	3.375 - 3.575	0.133 - 0.141
D2	4.824 - 4.976	0.190 - 0.196
E2	5.674 - 5.826	0.223 - 0.229
k	1.190 - 1.390	0.047 - 0.055
b	0.350 - 0.450	0.014 - 0.018
e	1.270TYP.	0.050TYP.
L	0.559 - 0.711	0.022 - 0.028
L1	0.424 - 0.576	0.017 - 0.023
H	0.574 - 0.726	0.023 - 0.029
	10 - 12	10 - 12