China N Channel 100V Power MOSFET Siliup SP010N01GHTO Featuring Split Gate Trench Technology for Switching for sale

N Channel 100V Power MOSFET Siliup SP010N01GHTO Featuring Split Gate Trench Technology for Switching

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Product Description

Product Overview

The SP010N01GHTO is a 100V N-Channel Power MOSFET from Siliup Semiconductor Technology Co. Ltd. It features fast switching, low gate charge, and low RDS(on) thanks to its advanced split gate trench technology. This MOSFET is suitable for PWM applications, hard switched and high-frequency circuits, and power management. It has undergone 100% single pulse avalanche energy testing.

Product Attributes

Brand: Siliup Semiconductor Technology Co. Ltd.
Product Code: SP010N01GHTO
Technology: Advanced Split Gate Trench Technology
Channel Type: N-Channel

Technical Specifications

Parameter	Symbol	Test Condition	Min	Typ	Max	Unit
Product Summary
V(BR)DSS	V(BR)DSS				100	V
RDS(on)TYP	RDS(on)TYP	@10V		1.05		m
ID	ID				390	A
Absolute Maximum Ratings
Drain-Source Voltage	VDS	(Ta=25 unless otherwise noted)			100	V
Gate-Source Voltage	VGS	(Ta=25 unless otherwise noted)			20	V
Continuous Drain Current	ID	(Tc=25)			390	A
Continuous Drain Current	ID	(Tc=100)			260	A
Pulsed Drain Current	IDM				1560	A
Single Pulse Avalanche Energy	EAS				2401	mJ
Power Dissipation	PD	(Tc=25)			435	W
Thermal Resistance Junction-to-Case	RJC			0.29		/W
Storage Temperature Range	TSTG		-55		150
Operating Junction Temperature Range	TJ		-55		150
Electrical Characteristics
Drain-Source Breakdown Voltage	BVDSS	VGS=0V , ID=250uA	100	110	-	V
Drain Cut-Off Current	IDSS	VDS=80V , VGS=0V , TJ=25	-	-	1	A
Gate Leakage Current	IGSS	VGS=20V , VDS=0V	-	-	100	nA
Gate Threshold Voltage	VGS(th)	VGS=VDS , ID =250uA	2	3	4	V
Drain-Source ON Resistance	RDS(ON)	VGS=10V , ID=50A	-	1.05	1.3	m
Dynamic Characteristics
Input Capacitance	Ciss	VDS=50V , VGS=0V , f=1MHz	-	15756	-	pF
Output Capacitance	Coss		-	1936	-
Reverse Transfer Capacitance	Crss		-	75	-
Total Gate Charge	Qg	VDS=50V , VGS=10V , ID=100A	-	268	-	nC
Gate-Source Charge	Qgs		-	78	-
Gate-Drain Charge	Qg		-	79	-
Switching Characteristics
Turn-On Delay Time	td(on)	VDD=50V, VGS=10V , RG=6, ID=100A	-	83	-	nS
Rise Time	tr		-	183	-
Turn-Off Delay Time	td(off)		-	176	-
Fall Time	tf		-	67	-
Drain-Source Body Diode Characteristics
Source-Drain Diode Forward Voltage	VSD	IS = 1A, VGS = 0V	-	-	1.2	V
Maximum Body-Diode Continuous Current	IS		-	-	390	A
Reverse Recovery Time	Trr	IS=100A, di/dt=100A/us, TJ=25	-	90	-	nS
Reverse Recovery Charge	Qrr		-	209	-	nC
Package Information
Package Type					TOLL
Order Information	SP010N01GHTO	TOLL	2000	Unit/Tape