dual P channel MOSFET Siliup SP30P13DP8 designed for power switching and high frequency circuits

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Product Description

Product Overview

The SP30P13DP8 is a 30V Dual P-Channel MOSFET from Siliup Semiconductor Technology Co. Ltd. It features fast switching, low gate charge, and low R_DS(on), making it suitable for power switching applications, hard switched and high frequency circuits, and uninterruptible power supplies. The device is 100% tested for single pulse avalanche energy.

Product Attributes

Brand: Siliup Semiconductor Technology Co. Ltd.
Model: SP30P13DP8
Package: SOP-8L
Device Code: 30P13D

Technical Specifications

Parameter	Symbol	Conditions	Min.	Typ.	Max.	Units
Product Summary
Drain-Source Voltage	V(BR)DSS			-30		V
Static Drain-Source On-Resistance	RDS(on)	-10V		13	18	m
Static Drain-Source On-Resistance	RDS(on)	-4.5V		20	30	m
Continuous Drain Current	ID				-9	A
Absolute Maximum Ratings (Ta=25, unless otherwise noted)
Drain-Source Voltage	VDS				-30	V
Gate-Source Voltage	VGS				20	V
Continuous Drain Current	ID				-9	A
Pulsed Drain Current	IDM				-36	A
Single Pulse Avalanche Energy	EAS			11.2		mJ
Power Dissipation	PD				1.5	W
Thermal Resistance Junction-to-Ambient	RJA				83	/W
Storage Temperature Range	TSTG		-55		150
Operating Junction Temperature Range	TJ		-55		150
Electrical Characteristics (Ta=25, unless otherwise noted)
Drain-Source Breakdown Voltage	BVDSS	VGS=0V , ID=-250uA	-30	-	-	V
Drain-Source Leakage Current	IDSS	VDS=-24V , VGS=0V	-	-	-1	uA
Gate-Source Leakage Current	IGSS	VGS=20V , VDS=0V	-	-	100	nA
Gate Threshold Voltage	VGS(th)	VGS=VDS , ID =-250uA	-1.0	-1.5	-2.5	V
Static Drain-Source On-Resistance	RDS(ON)	VGS=-10V , ID=-9A	-	13	18	m
Static Drain-Source On-Resistance	RDS(ON)	VGS=-4.5V , ID=-7A	-	20	30	m
Dynamic Characteristics
Input Capacitance	Ciss	VDS=-15V , VGS=0V , f=1MHz	-	1600	-	pF
Output Capacitance	Coss		-	350	-	pF
Reverse Transfer Capacitance	Crss		-	300	-	pF
Total Gate Charge	Qg	VDS=-15V , VGS=-10V , ID=-10A	-	30	-	nC
Gate-Source Charge	Qgs		-	5.5	-	nC
Gate-Drain Charge	Qgd		-	8	-	nC
Switching Characteristics
Turn-On Delay Time	Td(on)	VDD=-15V,VGS=-10V,RG=3, ID=-10A	-	10	-	nS
Rise Time	Tr		-	60	-	nS
Turn-Off Delay Time	Td(off)		-	52	-	nS
Fall Time	Tf		-	70	-	nS
Diode Characteristics
Diode Forward Voltage	VSD	VGS=0V , IS=-1A	-	-	-1.2	V
Maximum Body-Diode Continuous Current	IS		-	-	-9	A
Reverse Recovery Time	Trr	IS=-5A, di/dt=100A/us, TJ=25	-	35	-	nS
Reverse Recovery Charge	Qrr		-	11	-	nC
SOP-8L Package Information
Symbol	Dimensions In Millimeters	Min.	Max.
A		1.35	1.75
A1		0.10	0.25
A2		1.35	1.55
b		0.33	0.51
c		0.17	0.25
D		4.80	5.00
e		1.27 REF.
E		5.80	6.20
E1		3.80	4.00
L		0.40	1.27
		0	8