40V N Channel Power MOSFET Siliup SP40N01ABGTO with Split Gate Trench Technology and Fast Switching
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MOQ:
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Delivery Time:
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Product Description
Product Overview
The SP40N01ABGTO is a 40V N-Channel Power MOSFET from Siliup Semiconductor Technology Co. Ltd. Designed with advanced Split Gate Trench Technology, it offers fast switching, low gate charge, and low RDS(on). This MOSFET is ideal for PWM applications, hard-switched, and high-frequency circuits, as well as power management systems. It features 100% single pulse avalanche energy testing.
Product Attributes
- Brand: Siliup Semiconductor Technology Co. Ltd.
- Device Code: SP40N01ABGTO
- Package: TOLL
- Technology: Advanced Split Gate Trench Technology
Technical Specifications
| Parameter | Symbol | Conditions | Min. | Typ. | Max. | Units |
|---|---|---|---|---|---|---|
| Product Summary | ||||||
| V(BR)DSS | 40 | V | ||||
| RDS(on)TYP | @10V | 0.7 | m | |||
| RDS(on)TYP | @4.5V | 1 | m | |||
| ID | 330 | A | ||||
| Absolute Maximum Ratings | ||||||
| Drain-Source Voltage | VDS | (Ta=25, unless otherwise noted) | 40 | V | ||
| Gate-Source Voltage | VGS | 20 | V | |||
| Continuous Drain Current (Tc=25) | ID | 330 | A | |||
| Continuous Drain Current (Tc=100) | ID | 220 | A | |||
| Pulsed Drain Current | IDM | 1320 | A | |||
| Single Pulse Avalanche Energy | EAS | 1369 | mJ | |||
| Power Dissipation (Tc=25) | PD | 270 | W | |||
| Thermal Resistance Junction-to-Case | RJC | 0.46 | /W | |||
| Storage Temperature Range | TSTG | -55 | 150 | |||
| Operating Junction Temperature Range | TJ | -55 | 150 | |||
| Electrical Characteristics | ||||||
| Drain-Source Breakdown Voltage | BVDSS | VGS=0V , ID=250uA | 40 | 45 | - | V |
| Drain-Source Leakage Current | IDSS | VDS=32V , VGS=0V , TJ=25 | - | - | 1 | uA |
| Gate-Source Leakage Current | IGSS | VGS=20V , VDS=0V | - | - | 100 | nA |
| Gate Threshold Voltage | VGS(th) | VGS=VDS , ID =250uA | 1 | 1.7 | 2.5 | V |
| Static Drain-Source On-Resistance | RDS(ON) | VGS=10V , ID=20A | - | 0.7 | 1 | m |
| Static Drain-Source On-Resistance | RDS(ON) | VGS=4.5V , ID=20A | - | 1 | 1.5 | m |
| Dynamic Characteristics | ||||||
| Input Capacitance | Ciss | VDS=20V , VGS=0V , f=1MHz | - | 7300 | - | pF |
| Output Capacitance | Coss | - | 3550 | - | pF | |
| Reverse Transfer Capacitance | Crss | - | 145 | - | pF | |
| Total Gate Charge | Qg | VDS=20V , VGS=10V , ID=50A | - | 98 | - | nC |
| Gate-Source Charge | Qgs | - | 19 | - | ||
| Gate-Drain Charge | Qg d | - | 17 | - | ||
| Switching Characteristics | ||||||
| Turn-On Delay Time | Td(on) | VDD=20V , VGS=10V , RG=1.6 ID=50A | - | 13.5 | - | nS |
| Rise Time | Tr | - | 35.8 | - | ||
| Turn-Off Delay Time | Td(off) | - | 66 | - | ||
| Fall Time | Tf | - | 24.8 | - | ||
| Diode Characteristics | ||||||
| Diode Forward Voltage | VSD | VGS=0V , IS=1A , TJ=25 | - | - | 1.2 | V |
| Maximum Body-Diode Continuous Current | IS | - | - | 330 | A | |
| Reverse Recovery Time | Trr | IS=50A, di/dt=200A/us, TJ=25 | - | 68 | - | nS |
| Reverse Recovery Charge | Qrr | - | 95 | - | nC | |
| Package Information (TOLL) | ||||||
| Symbol | Dimensions (mm) Min. | Dimensions (mm) Nom. | Dimensions (mm) Max. | |||
| A | 2.20 | 2.30 | 2.40 | |||
| b | 0.65 | 0.75 | 0.85 | |||
| C | 0.508 REF | |||||
| D | 10.25 | 10.40 | 10.55 | |||
| D1 | 2.85 | 3.00 | 3.15 | |||
| E | 9.75 | 9.90 | 10.05 | |||
| E1 | 9.65 | 9.80 | 9.95 | |||
| E2 | 8.95 | 9.10 | 9.25 | |||
| E3 | 7.25 | 7.40 | 7.55 | |||
| e | 1.20 BSC | |||||
| F | 1.05 | 1.20 | 1.35 | |||
| H | 11.55 | 11.70 | 11.85 | |||
| H1 | 6.03 | 6.18 | 6.33 | |||
| H2 | 6.85 | 7.00 | 7.15 | |||
| H3 | 3.00 BSC | |||||
| L | 1.55 | 1.70 | 1.85 | |||
| L1 | 0.55 | 0.7 | 0.85 | |||
| L2 | 0.45 | 0.6 | 0.75 | |||
| M | 0.08 REF. | |||||
| 8 | 10 | 12 | ||||
| K | 4.25 | 4.40 | 4.55 | |||
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