PDFN5X6 8L 40V MOSFET with ROHS compliance and halogen free certification Siliup SP4023CNK device
Price:
Negotiable
MOQ:
Negotiable
Delivery Time:
Negotiable
Product Description
Product Overview
The SP4023CNK is a 40V complementary MOSFET from Siliup Semiconductor Technology Co. Ltd. Designed for high-performance applications, it features fast switching speeds and a surface mount PDFN5X6-8L package. This device is ROHS Compliant & Halogen-Free and undergoes 100% Single Pulse avalanche energy testing. It is ideal for use in DC-DC converters and motor control applications.
Product Attributes
- Brand: Siliup Semiconductor Technology Co. Ltd.
- Product Code: SP4023CNK
- Package Type: PDFN5X6-8L
- Certifications: ROHS Compliant & Halogen-Free
- Testing: 100% Single Pulse avalanche energy Test
Technical Specifications
| Parameter | Symbol | N-Channel Conditions | N-Channel Rating | P-Channel Conditions | P-Channel Rating | Unit |
|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDS | VGS=0V | 40 | VGS=0V | -40 | V |
| VGS=0V | - | VGS=0V | - | V | ||
| Gate-Source Voltage | VGS | ±20 | ±20 | V | ||
| Continuous Drain Current (Tc=25°C) | ID | 23 | -14 | A | ||
| Pulse Drain Current | IDM | 92 | -56 | A | ||
| Single pulsed avalanche energy | EAS | VDD=20V, VGS =10V, L = 0.1mH, Rg=25Ω | 18 | VDD=-20V, VGS =-10V, L = 0.1mH, Rg=25Ω | 29 | mJ |
| Power Dissipation (Tc=25°C) | PD | 25 | W | |||
| Thermal Resistance Junction-to-Case | RθJC | 5 | °C/W | |||
| Storage Temperature Range | TSTG | -55 to 150 | °C | |||
| Operating Junction Temperature Range | TJ | -55 to 150 | °C | |||
| Drain-Source Breakdown Voltage | BVDSS | VGS=0V , ID=250uA | 40 | VGS=0V , ID=-250uA | -40 | V |
| Drain-Source Leakage Current | IDSS | VDS=32V , VGS=0V , TJ=25°C | - | VDS=-32V , VGS=0V , TJ=25°C | -1 | uA |
| Gate-Source Leakage Current | IGSS | VGS=±20V , VDS=0V | ±100 | VGS=±20V , VDS=0V | ±100 | nA |
| Gate Threshold Voltage | VGS(th) | VGS=VDS , ID =250uA | 1.0 - 2.0 | VGS=VDS , ID =-250uA | -1.0 - -2.0 | V |
| Static Drain-Source On-Resistance | RDS(ON) | VGS = 10V, ID = 10A | 20 - 25 | VGS =-10V, ID =-5A | 32 - 38 | mΩ |
| Static Drain-Source On-Resistance | RDS(ON) | VGS = 4.5V, ID = 8A | 27 - 36 | VGS =-4.5V, ID =-3A | 39 - 49 | mΩ |
| Input Capacitance | Ciss | VDS=15V , VGS=0V , f=1MHz | 834 | VDS=-15V , VGS=0V , f=1MHz | 1215 | pF |
| Output Capacitance | Coss | 51 | 184 | pF | ||
| Reverse Transfer Capacitance | Crss | 45 | 102 | pF | ||
| Total Gate Charge | Qg | VDS=15V , VGS=10V , ID=10A | 15.8 | VDS=-15V , VGS=-10V , ID=-10A | 21 | nC |
| Gate-Source Charge | Qgs | 3.8 | 3.5 | nC | ||
| Gate-Drain Charge | Qg | 2.9 | 5.2 | nC | ||
| Turn-On Delay Time | Td(on) | VDD=20V VGS=10V , RG=3Ω, ID=10A | 4.8 | VDD=-15V VGS=-10V , RG=3Ω, ID=-6A | 5.1 | nS |
| Rise Time | Tr | 6.4 | 15 | nS | ||
| Turn-Off Delay Time | Td(off) | 18.8 | 23 | nS | ||
| Fall Time | Tf | 3.4 | 11 | nS | ||
| Diode Forward Voltage | VSD | VGS=0V , IS=1A , TJ=25°C | - | VGS=0V , IS=-1A , TJ=25°C | -1.2 | V |
| Maximum Body-Diode Continuous Current | IS | 23 | -14 | A | ||
| Reverse recover time | Trr | IS=20A, di/dt=100A/us, Tj=25°C | 11 | IS=-5A, di/dt=-100A/us, Tj=25°C | 15 | nS |
| Reverse recovery charge | Qrr | 6 | 9 | nC |
| Package | Symbol | Dimensions In Millimeters (Min.) | Dimensions In Millimeters (Max.) | Dimensions In Inches (Min.) | Dimensions In Inches (Max.) |
|---|---|---|---|---|---|
| PDFN5X6-8L | A | 0.900 | 1.000 | 0.035 | 0.039 |
| A3 | 0.254 | REF. | 0.010 | REF. | |
| D | 4.944 | 5.096 | 0.195 | 0.201 | |
| E | 5.974 | 6.126 | 0.235 | 0.241 | |
| D1 | 1.470 | 1.870 | 0.058 | 0.074 | |
| D2 | 0.470 | 0.870 | 0.019 | 0.034 | |
| E1 | 3.375 | 3.575 | 0.133 | 0.141 | |
| D3 | 4.824 | 4.976 | 0.190 | 0.196 | |
| E2 | 5.674 | 5.826 | 0.223 | 0.229 | |
| k | 1.190 | 1.390 | 0.047 | 0.055 | |
| b | 0.350 | 0.450 | 0.014 | 0.018 | |
| e | 1.270 TYP. | 0.050 TYP. | |||
| L | 0.559 | 0.711 | 0.022 | 0.028 | |
| L1 | 0.424 | 0.576 | 0.017 | 0.023 | |
| H | 0.574 | 0.726 | 0.023 | 0.029 | |
| θ | 10° | 12° | 10° | 12° |
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