60V P Channel Power MOSFET Siliup SP60P03GHTO with Low Reverse Transfer Capacitance and Gate Charge

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Product Description

Product Overview

The SP60P03GHTO is a 60V P-Channel Power MOSFET from Siliup Semiconductor Technology Co. Ltd. Engineered with advanced Split Gate Trench Technology, this MOSFET offers low gate charge and R_DS(on), along with low reverse transfer capacitance. It is designed for power switching applications, DC/DC converters, and power management systems. The device is 100% tested for single pulse avalanche energy, ensuring reliability in demanding applications.

Product Attributes

Brand: Siliup Semiconductor Technology Co. Ltd.
Product Code: SP60P03GHTO
Technology: Advanced Split Gate Trench Technology
Package: TOLL

Technical Specifications

Parameter	Symbol	Conditions	Min.	Typ.	Max.	Units
Product Summary
Drain-Source Voltage	V(BR)DSS		-60			V
R_DS(on)	RDS(on)TYP	@ -10V		3.1		m
Continuous Drain Current	ID				-220	A
Absolute Maximum Ratings
Drain-Source Voltage	VDS	(Ta=25)	-60			V
Gate-Source Voltage	VGS	(Ta=25)		20		V
Continuous Drain Current	ID	(Tc=25)			-220	A
Continuous Drain Current	ID	(Tc=100)			-148	A
Pulsed Drain Current	IDM				-880	A
Single Pulse Avalanche Energy	EAS			1936		mJ
Power Dissipation	PD	(Tc=25)			184	W
Thermal Resistance Junction-to-Case	RJC			0.68		/W
Storage Temperature Range	TSTG		-55		150
Operating Junction Temperature Range	TJ		-55		150
Electrical Characteristics
Drain-Source Breakdown Voltage	BVDSS	VGS=0V , ID= -250uA	-60	-68		V
Drain-Source Leakage Current	IDSS	VDS= -48V , VGS=0V , TJ=25	-	-	1	uA
Gate-Source Leakage Current	IGSS	VGS= 20V , VDS=0V	-	-	100	nA
Gate Threshold Voltage	VGS(th)	VGS=VDS , ID = -250uA	-1.5	-2.5	-3.5	V
Static Drain-Source On-Resistance	RDS(ON)	VGS= -10V , ID= -70A	-	3.1	3.9	m
Dynamic Characteristics
Input Capacitance	Ciss	VGS=0V, VDS= -20V,F=1MHz	-	8364	-	pF
Output Capacitance	Coss		-	1517	-	pF
Reverse Transfer Capacitance	Crss		-	110	-
Total Gate Charge	Qg	VDS= -30V, ID= -70A, VGS= -10V	-	82	-	nC
Gate-Source Charge	Qgs		-	26	-
Gate-Drain Charge	Qgd		-	18	-
Switching Characteristics
Turn-On Delay Time	Td(on)	VDD= -20V, ID= -70A, VGS= -10V, RG=2.6	-	20	-	nS
Rise Time	Tr		-	58	-
Turn-Off Delay Time	Td(off)		-	145	-
Fall Time	Tf		-	168	-
Source-Drain Diode Characteristics
Diode Forward Voltage	VSD	VGS=0V , IS= -100A , TJ=25	-	-	-1.2	V
Maximum Body-Diode Continuous Current	IS		-	-	140	A
Body Diode Reverse Recovery Time	Trr	IS=-50A, di/dt=100A/us, TJ=25	-	65	-	nS
Body Diode Reverse Recovery Charge	Qrr		-	116	-	nC
Package Information (TOLL)
Symbol	Dimensions (mm)	Min.	Nom.	Max.
A		2.20	2.30	2.40
b		0.65	0.75	0.85
C		0.508	REF
D		10.25	10.40	10.55
D1		2.85	3.00	3.15
E		9.75	9.90	10.05
E1		9.65	9.80	9.95
E2		8.95	9.10	9.25
E3		7.25	7.40	7.55
e			1.20	BSC
F		1.05	1.20	1.35
H		11.55	11.70	11.85
H1		6.03	6.18	6.33
H2		6.85	7.00	7.15
H3			3.00	BSC
L		1.55	1.70	1.85
L1		0.55	0.7	0.85
L2		0.45	0.6	0.75
M			0.08	REF.
		8	10	12
K		4.25	4.40	4.55