High current capacity 40V N Channel Power MOSFET Siliup SP40N02BGTD for power switching applications
Price:
Negotiable
MOQ:
Negotiable
Delivery Time:
Negotiable
Product Description
Product Overview
The SP40N02BGTD is a 40V N-Channel Power MOSFET designed for efficient power management applications. It features fast switching, low gate charge, and low RDS(on), making it ideal for DC-DC converters, high-frequency switching, and synchronous rectification. The device is 100% tested for single pulse avalanche energy, ensuring reliability in demanding conditions.
Product Attributes
- Brand: Shanghai Siliup Semiconductor Technology Co. Ltd.
- Product Code: SP40N02BGTD
- Device Code: 40N02BG
- Package: TO-263
Technical Specifications
| Parameter | Symbol | Conditions | Min. | Typ. | Max. | Units |
|---|---|---|---|---|---|---|
| Product Summary | ||||||
| Drain-Source Voltage | V(BR)DSS | 40 | V | |||
| RDS(on) | RDS(on) | @10V | 2.6 | m | ||
| RDS(on) | RDS(on) | @4.5V | 3.6 | m | ||
| Continuous Drain Current | ID | 145 | A | |||
| Absolute Maximum Ratings | ||||||
| Drain-Source Voltage | VDS | (Ta=25, unless otherwise noted) | 40 | V | ||
| Gate-Source Voltage | VGS | 20 | V | |||
| Continuous Drain Current | ID | (TC=25) | 145 | A | ||
| Pulsed Drain Current | IDM | 580 | A | |||
| Single Pulse Avalanche Energy | EAS | 529 | mJ | |||
| Total Power Dissipation | PD | (TC=25) | 175 | W | ||
| Thermal Resistance Junction-Case | RJC | 0.71 | /W | |||
| Storage Temperature Range | TSTG | -55 | 150 | |||
| Operating Junction Temperature Range | TJ | -55 | 150 | |||
| Electrical Characteristics | ||||||
| Drain-Source Breakdown Voltage | BVDSS | VGS=0V , ID=250uA | 40 | --- | --- | V |
| Drain-Source Leakage Current | IDSS | VDS=32V , VGS=0V , TJ=25 | --- | --- | 1 | uA |
| Gate-Source Leakage Current | IGSS | VGS=20V , VDS=0V | --- | --- | 100 | nA |
| Gate Threshold Voltage | VGS(th) | VGS=VDS , ID =250uA | 1 | 1.8 | 2.5 | V |
| Static Drain-Source On-Resistance | RDS(ON) | VGS=10V , ID=30A | --- | 2.6 | 3.3 | m |
| Static Drain-Source On-Resistance | RDS(ON) | VGS=4.5V , ID=20A | --- | 3.6 | 4.8 | m |
| Dynamic Characteristics | ||||||
| Input Capacitance | Ciss | VDS=20V , VGS=0V , f=1MHz | --- | 3485 | --- | pF |
| Output Capacitance | Coss | --- | 1208 | --- | pF | |
| Reverse Transfer Capacitance | Crss | --- | 59 | --- | pF | |
| Switching Characteristics | ||||||
| Total Gate Charge | Qg | VDS=20V , VGS=10V , ID=65A | --- | 57 | --- | nC |
| Gate-Source Charge | Qgs | --- | 9.5 | --- | ||
| Gate-Drain Charge | Qg d | --- | 11 | --- | ||
| Turn-On Delay Time | Td(on) | VDD=20V , VGS=10V , RG=1.6, ID=65A | --- | 10 | --- | ns |
| Rise Time | Tr | --- | 3 | --- | ||
| Turn-Off Delay Time | Td(off) | --- | 35 | --- | ||
| Fall Time | Tf | --- | 4 | --- | ||
| Diode Characteristics | ||||||
| Diode Forward Voltage | VSD | VGS=0V , IS=20A , TJ=25 | --- | --- | 1.2 | V |
Package Information (TO-263)
| Symbol | Dimensions In Millimeters | Dimensions In Inches | ||
|---|---|---|---|---|
| Min. | Max. | Min. | Max. | |
| A | 4.470 | 4.670 | 0.176 | 0.184 |
| A1 | 0.000 | 0.150 | 0.000 | 0.006 |
| B | 1.120 | 1.420 | 0.044 | 0.056 |
| b | 0.710 | 0.910 | 0.028 | 0.036 |
| b1 | 1.170 | 1.370 | 0.046 | 0.054 |
| c | 0.310 | 0.530 | 0.012 | 0.021 |
| c1 | 1.170 | 1.370 | 0.046 | 0.054 |
| D | 10.010 | 10.310 | 0.394 | 0.406 |
| E | 8.500 | 8.900 | 0.335 | 0.350 |
| e | 2.540 TYP. | 0.100 TYP. | ||
| e1 | 4.980 | 5.180 | 0.196 | 0.204 |
| L | 14.940 | 15.500 | 0.588 | 0.610 |
| L1 | 4.950 | 5.450 | 0.195 | 0.215 |
| L2 | 2.340 | 2.740 | 0.092 | 0.108 |
| L3 | 1.300 | 1.700 | 0.051 | 0.067 |
| 0 | 8 | 0 | 8 | |
| V | 5.600 REF. | 0.220 REF. |
Similar Products
Get in Touch
Have questions about our products or want to discuss a custom order? Our team is ready to help you.
Company
Hefei Purple Horn E-Commerce Co., Ltd.
Location
Room 1306B, Building A, Xindi Center, Qimen Road, Hefei City, Anhui Province
Contact Person
Sellina