Power MOSFET SP85N01GHTO 85V N Channel Featuring Low RDSon and Fast Switching for Power Management
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Negotiable
MOQ:
Negotiable
Delivery Time:
Negotiable
Product Description
Product Overview
The SP85N01GHTO is an 85V N-Channel Power MOSFET from Siliup Semiconductor Technology Co. Ltd. It features fast switching, low gate charge, and low RDS(on) thanks to its advanced split gate trench technology. This MOSFET is 100% tested for single pulse avalanche energy and is suitable for power switching applications, DC-DC converters, and power management systems.
Product Attributes
- Brand: Siliup Semiconductor Technology Co. Ltd.
- Product Code: SP85N01GHTO
- Technology: Advanced Split Gate Trench Technology
- Channel Type: N-Channel
Technical Specifications
| Parameter | Symbol | Rating | Unit | Test Condition |
|---|---|---|---|---|
| Drain-Source Voltage | VDS | 85 | V | |
| Gate-Source Voltage | VGS | 20 | V | |
| Continuous Drain Current (Tc=25) | ID | 390 | A | |
| Continuous Drain Current (Tc=100) | ID | 230 | A | |
| Pulsed Drain Current | IDM | 1560 | A | |
| Single Pulse Avalanche Energy | EAS | 2652 | mJ | |
| Power Dissipation (Tc=25) | PD | 500 | W | |
| Thermal Resistance Junction-to-Case | RJC | 0.25 | /W | |
| Storage Temperature Range | TSTG | -55 to 150 | ||
| Operating Junction Temperature Range | TJ | -55 to 150 | ||
| Drain-Source Breakdown Voltage | BVDSS | 85 | V | ID = 250A, VGS = 0V |
| Drain Cut-Off Current | IDSS | 1 | A | VDS = 68V, VGS = 0V |
| Gate Leakage Current | IGSS | 0.1 | A | VGS = 20V, VDS = 0V |
| Gate Threshold Voltage | VGS(th) | 2.0 | V | VDS = VGS, ID = 250A |
| Drain-Source ON Resistance | RDS(ON) | 1 | m | VGS = 10V, ID = 20A |
| Input Capacitance | Ciss | 15000 | pF | VDS =40V, VGS = 0V, f = 1.0MHz |
| Output Capacitance | Coss | 2600 | pF | |
| Reverse Transfer Capacitance | Crss | 60 | pF | |
| Total Gate Charge | Qg | 263 | nC | VDS=40V , VGS=10V , ID=20A |
| Gate-Source Charge | Qgs | 68 | nC | |
| Gate-Drain Charge | Qgd | 53 | nC | |
| Turn-On Delay Time | td(on) | 35 | nS | VGS = 10V, VDS = 40V, ID=20A , RG = 1.6 |
| Rise Time | tr | 20 | nS | |
| Turn-Off Delay Time | td(off) | 58 | nS | |
| Fall Time | tf | 21 | nS | |
| Source-Drain Diode Forward Voltage | VSD | 1.2 | V | IS = 1A, VGS = 0V |
| Maximum Body-Diode Continuous Current | IS | 390 | A | |
| Reverse Recovery Time | Trr | 150 | nS | IS=100A, di/dt=100A/us, TJ=25 |
| Reverse Recovery Charge | Qrr | 390 | nC |
Order Information
| Device | Package | Unit/Tape |
|---|---|---|
| SP85N01GHTO | TOLL | 2000 |
Package Information (TOLL)
| Symbol | Dimensions (Millimeters) | ||
|---|---|---|---|
| Min. | Nom. | Max. | |
| A | 2.20 | 2.30 | 2.40 |
| b | 0.65 | 0.75 | 0.85 |
| C | 0.508 | REF | |
| D | 10.25 | 10.40 | 10.55 |
| D1 | 2.85 | 3.00 | 3.15 |
| E | 9.75 | 9.90 | 10.05 |
| E1 | 9.65 | 9.80 | 9.95 |
| E2 | 8.95 | 9.10 | 9.25 |
| E3 | 7.25 | 7.40 | 7.55 |
| e | 1.20 | BSC | |
| F | 1.05 | 1.20 | 1.35 |
| H | 11.55 | 11.70 | 11.85 |
| H1 | 6.03 | 6.18 | 6.33 |
| H2 | 6.85 | 7.00 | 7.15 |
| H3 | 3.00 | BSC | |
| L | 1.55 | 1.70 | 1.85 |
| L1 | 0.55 | 0.7 | 0.85 |
| L2 | 0.45 | 0.6 | 0.75 |
| M | 0.08 | REF. | |
| 8 | 10 | 12 | |
| K | 4.25 | 4.40 | 4.55 |
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