Low RDS on N Channel MOSFET Siliup SP40N01GNP 40V with Fast Switching and Cu Clip Process Technology
Price:
Negotiable
MOQ:
Negotiable
Delivery Time:
Negotiable
Product Description
Product Overview
The SP40N01GNP is a 40V N-Channel Power MOSFET from Siliup Semiconductor Technology Co. Ltd. It features fast switching, low gate charge, and low RDS(on) due to its advanced split gate trench technology and Cu-Clip process. This MOSFET is designed for PWM applications, hard switched and high frequency circuits, and power management. It has undergone 100% single pulse avalanche energy testing.
Product Attributes
- Brand: Siliup Semiconductor Technology Co. Ltd.
- Technology: Advanced Split Gate Trench Technology
- Process: Cu-Clip Process
- Channel Type: N-Channel
- Package: PDFN5X6-8L
Technical Specifications
| Parameter | Symbol | Conditions | Min. | Typ. | Max. | Unit |
|---|---|---|---|---|---|---|
| Product Summary | ||||||
| Drain-Source Voltage | V(BR)DSS | 40 | V | |||
| RDS(on) | @10V | 1.1 | m | |||
| RDS(on) | @4.5V | 1.3 | m | |||
| Continuous Drain Current | ID | 185 | A | |||
| Absolute Maximum Ratings | ||||||
| Drain-Source Voltage | VDS | (Ta=25, unless otherwise noted) | 40 | V | ||
| Gate-Source Voltage | VGS | (Ta=25, unless otherwise noted) | 20 | V | ||
| Continuous Drain Current | ID | (Tc=25) | 185 | A | ||
| Continuous Drain Current | ID | (Tc=100) | 125 | A | ||
| Pulsed Drain Current | IDM | 740 | A | |||
| Single Pulse Avalanche Energy | EAS | 1089 | mJ | |||
| Power Dissipation | PD | (Tc=25) | 142 | W | ||
| Thermal Resistance Junction-to-Case | RJC | 0.88 | /W | |||
| Storage Temperature Range | TSTG | -55 | 150 | |||
| Operating Junction Temperature Range | TJ | -55 | 150 | |||
| Electrical Characteristics | ||||||
| Drain-Source Breakdown Voltage | BVDSS | VGS=0V , ID=250uA | 40 | 47 | - | V |
| Drain-Source Leakage Current | IDSS | VDS=32V , VGS=0V , TJ=25 | - | - | 1 | uA |
| Gate-Source Leakage Current | IGSS | VGS=20V , VDS=0V | - | - | 100 | nA |
| Gate Threshold Voltage | VGS(th) | VGS=VDS , ID =250uA | 1 | 1.7 | 2.5 | V |
| Static Drain-Source On-Resistance | RDS(ON) | VGS=10V , ID=50A | - | 1.1 | 1.4 | m |
| Static Drain-Source On-Resistance | RDS(ON) | VGS=4.5V , ID=50A | - | 1.3 | 2.1 | m |
| Input Capacitance | Ciss | VDS=20V , VGS=0V , f=1MHz | - | 5500 | - | pF |
| Output Capacitance | Coss | - | 1850 | - | pF | |
| Reverse Transfer Capacitance | Crss | - | 65 | - | pF | |
| Total Gate Charge | Qg | VDS=20V , VGS=10V , ID=50A | - | 128 | - | nC |
| Gate-Source Charge | Qgs | - | 19 | - | nC | |
| Gate-Drain Charge | Qg d | - | 12 | - | nC | |
| Turn-On Delay Time | Td(on) | VDD=20V , VGS=10V , RG=1.6, ID=50A | - | 13.5 | - | nS |
| Rise Time | Tr | - | 8.8 | - | nS | |
| Turn-Off Delay Time | Td(off) | - | 52 | - | nS | |
| Fall Time | Tf | - | 9.6 | - | nS | |
| Diode Forward Voltage | VSD | VGS=0V , IS=1A , TJ=25 | - | - | 1.2 | V |
| Maximum Body-Diode Continuous Current | IS | - | - | 185 | A | |
| Reverse Recovery Time | Trr | IS=50A, di/dt=100A/us, TJ=25 | - | 55 | - | nS |
| Reverse Recovery Charge | Qrr | - | 53 | - | nC | |
| Package Information (PDFN5X6-8L) | ||||||
| Symbol | Dimensions In Millimeters | Dimensions In Inches | Min. | Max. | Min. | Max. |
| A | 0.900 | 1.000 | 0.035 | 0.039 | ||
| A3 | 0.254REF. | 0.010REF. | ||||
| D | 4.944 | 5.096 | 0.195 | 0.201 | ||
| E | 5.974 | 6.126 | 0.235 | 0.241 | ||
| D1 | 3.910 | 4.110 | 0.154 | 0.162 | ||
| E1 | 3.375 | 3.575 | 0.133 | 0.141 | ||
| D2 | 4.824 | 4.976 | 0.190 | 0.196 | ||
| E2 | 5.674 | 5.826 | 0.223 | 0.229 | ||
| k | 1.190 | 1.390 | 0.047 | 0.055 | ||
| b | 0.350 | 0.450 | 0.014 | 0.018 | ||
| e | 1.270TYP. | 0.050TYP. | ||||
| L | 0.559 | 0.711 | 0.022 | 0.028 | ||
| L1 | 0.424 | 0.576 | 0.017 | 0.023 | ||
| H | 0.574 | 0.726 | 0.023 | 0.029 | ||
| 10 | 12 | 10 | 12 | |||
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