650V Super Junction MOSFET Siliup SP20MF65TF Featuring Low Gate Charge Fast Switching and Low RDSon for Power Systems
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Product Description
Product Overview
The SP20MF65TF is a 650V Super-Junction MOSFET from Siliup Semiconductor Technology Co. Ltd., designed for high-performance applications. It features fast switching, low gate charge, and low RDS(on), making it ideal for PWM applications, hard-switched and high-frequency circuits, and power management systems. The device is 100% tested for single pulse avalanche energy.
Product Attributes
- Brand: Siliup Semiconductor Technology Co. Ltd.
- Device Code: 20MF65
- Package: TO-247
Technical Specifications
| Parameter | Symbol | Conditions | Min. | Typ. | Max. | Units |
|---|---|---|---|---|---|---|
| Product Summary | ||||||
| Drain-Source Voltage | V(BR)DSS | 650 | V | |||
| Static Drain-Source On-Resistance | RDS(on) | @10V | 175 | m | ||
| Continuous Drain Current | ID | 20 | A | |||
| Features | ||||||
| Fast Switching | ||||||
| Low Gate Charge and Rdson | ||||||
| 100% Single Pulse avalanche energy Test | ||||||
| Applications | ||||||
| PWM Application | ||||||
| Hard switched and high frequency circuits | ||||||
| Power Management | ||||||
| Absolute Maximum Ratings | ||||||
| Drain-Source Voltage | VDS | (Ta=25,unless otherwise noted) | 650 | V | ||
| Gate-Source Voltage | VGS | (Ta=25,unless otherwise noted) | 30 | V | ||
| Continuous Drain Current | ID | (Tc=25) | 20 | A | ||
| Continuous Drain Current | ID | (Tc=100) | 12.5 | A | ||
| Pulsed Drain Current | IDM | 80 | A | |||
| Single Pulse Avalanche Energy | EAS | 1 | 485 | mJ | ||
| Power Dissipation | PD | (Tc=25) | 34 | W | ||
| Thermal Resistance Junction-to-Case | RJC | 3.68 | /W | |||
| Storage Temperature Range | TSTG | -55 | 150 | |||
| Operating Junction Temperature Range | TJ | -55 | 150 | |||
| Electrical Characteristics | ||||||
| Drain-Source Breakdown Voltage | BVDSS | ID = 250A, VGS = 0V | 650 | - | - | V |
| Drain-Source Leakage Current | IDSS | VDS = 520V, VGS = 0V | - | - | 1 | uA |
| Gate-Source Leakage Current | IGSS | VGS = 30V, VDS = 0V | - | - | 0.1 | nA |
| Gate Threshold Voltage | VGS(th) | VDS = VGS, ID = 250A | 3 | 4 | 5 | V |
| Static Drain-Source On-Resistance | RDS(ON) | VGS = 10V, ID = 10A | - | 175 | 205 | m |
| Input Capacitance | Ciss | VDS=50V , VGS=0V , f=1MHz | - | 1745 | - | pF |
| Output Capacitance | Coss | - | 102 | - | pF | |
| Reverse Transfer Capacitance | Crss | - | 2.5 | - | pF | |
| Total Gate Charge | Qg | VDS=400V , VGS=0-10V , ID=10A | - | 45.5 | - | nC |
| Gate-Source Charge | Qgs | - | 10.5 | - | nC | |
| Gate-Drain Charge | Qg | - | 9 | - | nC | |
| Turn-On Delay Time | Td(on) | VDD=400V, VGS=10V , RG=2, ID=10A | - | 31 | - | nS |
| Rise Time | Tr | - | 20 | - | nS | |
| Turn-Off Delay Time | Td(off) | - | 83 | - | nS | |
| Fall Time | Tf | - | 9 | - | nS | |
| Diode Forward Voltage | VSD | VGS=0V , IS=1A , TJ=25 | - | - | 1.2 | V |
| Maximum Body-Diode Continuous Current | IS | - | - | 20 | A | |
| Reverse recover time | Trr | IS=10A, di/dt=100A/us, Tj=25 | - | 170 | - | nS |
| Reverse recovery charge | Qrr | - | 5.8 | - | uC | |
| TO-247 Package Information (Dimensions in Millimeters) | |||
|---|---|---|---|
| Symbol | Min. | Max. | |
| A | 4.850 | 5.150 | |
| A1 | 2.200 | 2.600 | |
| b2 | 1.800 | 2.200 | |
| b | 1.000 | 1.400 | |
| b1 | 2.800 | 3.200 | |
| c | 0.500 | 0.700 | |
| c1 | 1.900 | 2.100 | |
| D | 15.450 | 15.750 | |
| E1 | 3.500 | REF. | |
| E2 | 3.600 | REF. | |
| L | 40.900 | 41.300 | |
| L1 | 24.800 | 25.100 | |
| L2 | 20.300 | 20.600 | |
| 7.100 | 7.300 | ||
| e | 5.450 | TYP. | |
| H1 | 5.980 | REF. | |
| h | 0.000 | 0.300 | |
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