Power Switching MOSFET 150V N Channel with Low RDSon and Fast Switching Siliup SP015N06GHTG in TO 220F Package
Price:
Negotiable
MOQ:
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Delivery Time:
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Product Description
Product Overview
The SP015N06GHTG is a 150V N-Channel Power MOSFET from Siliup Semiconductor Technology Co. Ltd. It features fast switching, low gate charge, and low RDS(on) thanks to its advanced split gate trench technology. This MOSFET is 100% tested for single pulse avalanche energy and is suitable for power switching applications, DC-DC converters, and power management systems. It is supplied in a TO-220F package.
Product Attributes
- Brand: Siliup Semiconductor Technology Co. Ltd.
- Product Code: SP015N06GH
- Package: TO-220F
- Technology: Advanced Split Gate Trench Technology
- Channel Type: N-Channel
Technical Specifications
| Parameter | Symbol | Test Condition | Min | Typ | Max | Unit |
| Product Summary | ||||||
| V(BR)DSS | V(BR)DSS | 150 | V | |||
| RDS(on)TYP | RDS(on) | @10V | 6.9 | m | ||
| ID | ID | 120 | A | |||
| Absolute Maximum Ratings | ||||||
| Drain-Source Voltage | VDS | (Ta=25,unless otherwise noted) | 150 | V | ||
| Gate-Source Voltage | VGS | (Ta=25,unless otherwise noted) | 20 | V | ||
| Continuous Drain Current | ID | (Tc=25) | 120 | A | ||
| Continuous Drain Current | ID | (Tc=100) | 80 | A | ||
| Pulsed Drain Current | IDM | 480 | A | |||
| Single Pulse Avalanche Energy | EAS | 812 | mJ | |||
| Power Dissipation | PD | (Tc=25) | 230 | W | ||
| Thermal Resistance Junction-to-Case | RJC | 0.54 | /W | |||
| Storage Temperature Range | TSTG | -55 | 150 | |||
| Operating Junction Temperature Range | TJ | -55 | 150 | |||
| Electrical Characteristics | ||||||
| Drain-Source Breakdown Voltage | BVDSS | ID = 250A, VGS = 0V | 150 | - | - | V |
| Drain Cut-Off Current | IDSS | VDS = 120V, VGS = 0V | - | - | 1 | A |
| Gate Leakage Current | IGSS | VGS = 20V, VDS = 0V | - | - | 0.1 | A |
| Gate Threshold Voltage | VGS(th) | VDS = VGS, ID = 250A | 2.0 | 3.0 | 4.0 | V |
| Drain-Source ON Resistance | RDS(ON) | VGS = 10V, ID = 20A | - | 6.9 | 8.7 | m |
| Dynamic Characteristics | ||||||
| Input Capacitance | Ciss | VDS = 75V, VGS = 0V, f = 1.0MHz | - | 5240 | - | pF |
| Output Capacitance | Coss | - | 430 | - | pF | |
| Reverse Transfer Capacitance | Crss | - | 14 | - | pF | |
| Total Gate Charge | Qg | VDS=75V , VGS=10V , ID=70A | - | 70 | - | nC |
| Gate-Source Charge | Qgs | - | 31 | - | ||
| Gate-Drain Charge | Qg | - | 20 | - | ||
| Switching Characteristics | ||||||
| Turn-On Delay Time | td(on) | VGS = 10V, VDS = 50V, ID = 70A, RG = 6 | - | 24 | - | nS |
| Rise Time | tr | - | 35 | - | ||
| Turn-Off Delay Time | td(off) | - | 46 | - | ||
| Fall Time | tf | - | 15 | - | ||
| Drain-Source Body Diode Characteristics | ||||||
| Source-Drain Diode Forward Voltage | VSD | IS = 1A, VGS = 0V | - | - | 1.2 | V |
| Maximum Body-Diode Continuous Current | IS | - | - | 120 | A | |
| Body Diode Reverse Recovery Time | Trr | IS=50A, di/dt=100A/us, TJ=25 | - | 98 | - | nS |
| Body Diode Reverse Recovery Charge | Qrr | - | 217 | - | nC | |
Package Information (TO-220F)
| Symbol | Dimensions (mm) |
| A | 4.300 - 4.700 |
| A1 | 1.300 REF. |
| A2 | 2.800 - 3.200 |
| A3 | 2.500 - 2.900 |
| b | 0.500 - 0.750 |
| b1 | 1.100 - 1.350 |
| b2 | 1.500 - 1.750 |
| c | 0.500 - 0.750 |
| D | 9.960 - 10.360 |
| E | 14.800 - 15.200 |
| e | 2.540 TYP. |
| F | 2.700 REF. |
| 3.500 REF. | |
| h | 0.000 - 0.300 |
| h1 | 0.800 REF. |
| h2 | 0.500 REF. |
| L | 28.000 - 28.400 |
| L1 | 1.700 - 1.900 |
| L2 | 0.900 - 1.100 |
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