40V N Channel Power MOSFET Siliup SP40N01AGMT ideal for high frequency circuits and power management
Price:
Negotiable
MOQ:
Negotiable
Delivery Time:
Negotiable
Product Description
Product Overview
The SP40N01AGMT is a 40V N-Channel Power MOSFET from Siliup Semiconductor Technology Co. Ltd. Engineered with advanced Split Gate Trench Technology, it offers fast switching, low gate charge, and low RDS(on). This MOSFET is ideal for PWM applications, hard-switched, and high-frequency circuits, as well as power management solutions. It features 100% single pulse avalanche energy testing for enhanced reliability.
Product Attributes
- Brand: Siliup Semiconductor Technology Co. Ltd.
- Device Code: SP40N01AGMT
- Package: sTOLL
Technical Specifications
| Parameter | Symbol | Conditions | Min. | Typ. | Max. | Unit |
| Product Summary | ||||||
| V(BR)DSS | 40V | V | ||||
| RDS(on)TYP | @10V | 0.7m | ||||
| RDS(on)TYP | @4.5V | 1.2m | ||||
| ID | 400A | |||||
| Absolute Maximum Ratings | ||||||
| Drain-Source Voltage | VDS | 40 | V | |||
| Gate-Source Voltage | VGS | 20 | V | |||
| Continuous Drain Current (Tc=25) | ID | 400 | A | |||
| Continuous Drain Current (Tc=100) | ID | 267 | A | |||
| Pulsed Drain Current | IDM | 1200 | A | |||
| Single Pulse Avalanche Energy | EAS | 1506 | mJ | |||
| Total Power Dissipation (Tc=25) | PD | 327 | W | |||
| Thermal Resistance Junction-to-Case | RJC | 0.38 | /W | |||
| Storage Temperature Range | TSTG | -55 | 150 | |||
| Operating Junction Temperature Range | TJ | -55 | 150 | |||
| Electrical Characteristics | ||||||
| Drain-Source Breakdown Voltage | BVDSS | VGS=0V , ID=250uA | 40 | - | - | V |
| Drain-Source Leakage Current | IDSS | VDS=32V , VGS=0V , TJ=25 | - | - | 1 | uA |
| Gate-Source Leakage Current | IGSS | VGS=20V , VDS=0V | - | - | 100 | nA |
| Gate Threshold Voltage | VGS(th) | VGS=VDS , ID =250uA | 1 | 1.7 | 2.5 | V |
| Static Drain-Source On-Resistance | RDS(ON) | VGS=10V , ID=30A | - | 0.7 | 0.95 | m |
| Static Drain-Source On-Resistance | RDS(ON) | VGS=4.5V , ID=30A | - | 1.2 | 1.6 | m |
| Dynamic Characteristics | ||||||
| Input Capacitance | Ciss | VDS=20V , VGS=0V , f=1MHz | - | 7300 | - | pF |
| Output Capacitance | Coss | - | 3550 | - | pF | |
| Reverse Transfer Capacitance | Crss | - | 145 | - | pF | |
| Total Gate Charge | Qg | VDS=20V , VGS=10V , ID=50A | - | 98 | - | nC |
| Gate-Source Charge | Qgs | - | 19 | - | ||
| Gate-Drain Charge | Qg | - | 17 | - | ||
| Switching Characteristics | ||||||
| Turn-On Delay Time | Td(on) | VDD=20V , VGS=10V , RG=1.6, ID=50A | - | 13.5 | - | nS |
| Rise Time | Tr | - | 35.8 | - | ||
| Turn-Off Delay Time | Td(off) | - | 66 | - | ||
| Fall Time | Tf | - | 24.8 | - | ||
| Diode Characteristics | ||||||
| Diode Forward Voltage | VSD | VGS=0V , IS=1A , TJ=25 | - | - | 1.2 | V |
| Maximum Body-Diode Continuous Current | IS | - | - | 400 | A | |
| Reverse Recovery Time | Trr | IS=50A, di/dt=100A/us, TJ=25 | - | 68 | - | nS |
| Reverse Recovery Charge | Qrr | - | 95 | - | nC | |
| Package Information (sTOLL) | ||||||
| Symbol | Dimensions (mm) | MIN | NOM | MAX | ||
| A | 2.262 | 2.300 | 2.338 | |||
| A3 | 0.492 | 0.500 | 0.508 | |||
| D | 7.950 | 8.000 | 8.050 | |||
| D5 | 6.650 | 6.700 | 6.750 | |||
| E | 6.950 | 7.000 | 7.050 | |||
| e | 1.30 | BCS | ||||
| e1 | 1.60 | BCS | ||||
| D1 | 0.130 | ref | ||||
| D2 | 5.150 | 5.200 | 5.250 | |||
| D3 | 2.520 | 2.570 | 2.620 | |||
| D4 | 2.450 | 2.500 | 2.550 | |||
| b | 0.750 | 0.800 | 0.850 | |||
| b1 | 0.350 | ref | ||||
| b2 | 0.350 | 0.450 | 0.550 | |||
| b3 | 0.400 | 0.425 | 0.450 | |||
| b4 | 1.100 | 1.200 | 1.300 | |||
| b5 | 1.550 | 1.650 | 1.750 | |||
| L | 1.100 | 1.150 | 1.200 | |||
| L1 | 0.650 | 0.700 | 0.750 | |||
| L2 | 0.550 | 0.600 | 0.650 | |||
| L3 | 0.850 | 0.900 | 0.950 | |||
| L4 | 0.185 | 0.235 | 0.285 | |||
| E1 | 6.850 | 6.900 | 6.950 | |||
| E2 | 5.910 | 5.960 | 6.010 | |||
| E3 | 5.610 | 5.660 | 5.710 | |||
| E4 | 6.510 | 6.560 | 6.610 | |||
| K1 | 2.430 | ref | ||||
| K2 | 1.970 | ref | ||||
| K3 | 2.275 | 2.300 | 2.325 | |||
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