Power MOSFET Siliup SP015N05GHTF 150V N Channel with High Pulsed Current and Low RDSon in TO247 Package
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Product Description
Product Overview
The SP015N05GHTF is a 150V N-Channel Power MOSFET from Siliup Semiconductor Technology Co. Ltd. It features fast switching, low gate charge, and low RDS(on) thanks to its advanced split gate trench technology. This MOSFET is 100% tested for single pulse avalanche energy and is suitable for power switching applications, DC-DC converters, and power management systems. It comes in a TO-247 package.
Product Attributes
- Brand: Siliup Semiconductor Technology Co. Ltd.
- Product Code: SP015N05GHTF
- Package Type: TO-247
- Channel Type: N-Channel
- Technology: Advanced Split Gate Trench
Technical Specifications
| Parameter | Symbol | Test Condition | Min | Typ | Max | Unit |
|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDS | 150 | V | |||
| Gate-Source Voltage | VGS | 20 | V | |||
| Continuous Drain Current (Tc=25) | ID | 185 | A | |||
| Continuous Drain Current (Tc=100) | ID | 125 | A | |||
| Pulsed Drain Current | IDM | 740 | A | |||
| Single Pulse Avalanche Energy | EAS | 1225 | mJ | |||
| Power Dissipation (Tc=25) | PD | 335 | W | |||
| Thermal Resistance Junction-to-Case | RJC | 0.37 | /W | |||
| Storage Temperature Range | TSTG | -55 | 150 | |||
| Operating Junction Temperature Range | TJ | -55 | 150 | |||
| Drain-Source Breakdown Voltage | BVDSS | ID = 250A, VGS = 0V | 150 | - | - | V |
| Drain Cut-Off Current | IDSS | VDS = 120V, VGS = 0V | - | - | 1 | A |
| Gate Leakage Current | IGSS | VGS = 20V, VDS = 0V | - | - | 100 | nA |
| Gate Threshold Voltage | VGS(th) | VDS = VGS, ID = 250A | 2.0 | 3.0 | 4.0 | V |
| Drain-Source ON Resistance | RDS(ON) | VGS = 10V, ID = 20A | - | 5.2 | 6.5 | m |
| Input Capacitance | Ciss | VDS = 75V, VGS = 0V, f = 1.0MHz | - | 5450 | - | pF |
| Output Capacitance | Coss | - | 690 | - | pF | |
| Reverse Transfer Capacitance | Crss | - | 26 | - | pF | |
| Total Gate Charge | Qg | VDS = 75V, VGS = 10V, ID=20A | - | 78 | - | nC |
| Gate-Source Charge | Qgs | - | 34 | - | nC | |
| Gate-Drain Charge | Qg d | - | 22 | - | nC | |
| Turn-On Delay Time | td(on) | VGS = 10V, VDS = 75V, ID = 20A, RG = 3 | - | 24 | - | nS |
| Rise Time | tr | - | 35 | - | nS | |
| Turn-Off Delay Time | td(off) | - | 46 | - | nS | |
| Fall Time | tf | - | 15 | - | nS | |
| Source-Drain Diode Forward Voltage | VSD | IS = 1A, VGS = 0V | - | - | 1.2 | V |
| Maximum Body-Diode Continuous Current | IS | - | - | 185 | A | |
| Body Diode Reverse Recovery Time | Trr | IS = 15A, di/dt=100A/us, TJ=25 | - | 108 | - | nS |
| Body Diode Reverse Recovery Charge | Qrr | - | 312 | - | nC |
Note: 1. The test condition for EAS is VDD=75V, VGS=10V, L=0.5mH, RG=25.
| Package | Symbol | Dimensions In Millimeters | Dimensions In Inches | ||
|---|---|---|---|---|---|
| Min | Max | Min | Max | ||
| TO-247 | A | 4.850 | 5.150 | 0.191 | 0.200 |
| A1 | 2.200 | 2.600 | 0.087 | 0.102 | |
| b2 | 1.800 | 2.200 | 0.071 | 0.087 | |
| b | 1.000 | 1.400 | 0.039 | 0.055 | |
| b1 | 2.800 | 3.200 | 0.110 | 0.126 | |
| c | 0.500 | 0.700 | 0.020 | 0.028 | |
| c1 | 1.900 | 2.100 | 0.075 | 0.083 | |
| D | 15.450 | 15.750 | 0.608 | 0.620 | |
| E1 | 3.500 REF. | 0.138 REF. | |||
| E2 | 3.600 REF. | 0.142 REF. | |||
| L | 40.900 | 41.300 | 1.610 | 1.626 | |
| L1 | 24.800 | 25.100 | 0.976 | 0.988 | |
| L2 | 20.300 | 20.600 | 0.799 | 0.811 | |
| 7.100 | 7.300 | 0.280 | 0.287 | ||
| e | 5.450 TYP. | 0.215 TYP. | |||
| H1 | 5.980 REF. | 0.235 REF. | |||
| h | 0.000 | 0.300 | 0.000 | 0.012 |
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