30V P Channel MOSFET Siliup SP4435AP8 featuring low RDS on and single pulse avalanche energy testing

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Product Description

Product Overview

The SP4435AP8 is a 30V P-Channel MOSFET from Siliup Semiconductor Technology Co. Ltd. Engineered for power switching applications, it features fast switching capabilities, low gate charge, and low RDS(on). This device is suitable for hard-switched and high-frequency circuits, including Uninterruptible Power Supplies. It is 100% tested for single pulse avalanche energy.

Product Attributes

Brand: Siliup Semiconductor Technology Co. Ltd.
Product Type: P-Channel MOSFET
Model: SP4435AP8
Marking: 4435A
Package: SOP-8L

Technical Specifications

Parameter	Symbol	Conditions	Min.	Typ.	Max.	Units
Product Summary
V(BR)DSS	V(BR)DSS				-30	V
RDS(on)TYP	RDS(on)	@-10V		11	15	m
RDS(on)TYP	RDS(on)	@-4.5V		14	25	m
ID	ID				-13	A
Absolute Maximum Ratings (Ta=25, unless otherwise noted)
Drain-Source Voltage	VDS				-30	V
Gate-Source Voltage	VGS				20	V
Continuous Drain Current	ID				-13	A
Pulsed Drain Current	IDM				-42	A
Single Pulse Avalanche Energy	EAS				56	mJ
Power Dissipation	PD				2.5	W
Junction-to-Ambient Thermal Resistance	RJA				50	/W
Storage Temperature Range	TSTG		-55		150
Operating Junction Temperature Range	TJ		-55		150
Electrical Characteristics (Ta=25, unless otherwise noted)
Drain-Source Breakdown Voltage	BVDSS	VGS=0V , ID=-250uA	-30	-	-	V
Drain-Source Leakage Current	IDSS	VDS=-24V , VGS=0V	-	-	-1	uA
Gate-Source Leakage Current	IGSS	VGS=20V , VDS=0V	-	-	100	nA
Gate Threshold Voltage	VGS(th)	VGS=VDS , ID =-250uA	-1.0	-1.6	-2.0	V
Static Drain-Source On-Resistance	RDS(ON)	VGS=-10V , ID=-10A	-	11	15	m
Static Drain-Source On-Resistance	RDS(ON)	VGS=-4.5V , ID=-7A	-	14	25	m
Dynamic Characteristics
Input Capacitance	Ciss	VDS=-15V , VGS=0V , f=1MHz	-	1450	-	pF
Output Capacitance	Coss		-	205	-	pF
Reverse Transfer Capacitance	Crss		-	173	-	pF
Total Gate Charge	Qg	VDS=-15V , VGS=-4.5V , ID=-9A	-	20	-	nC
Gate-Source Charge	Qgs		-	5.1	-
Gate-Drain Charge	Qg d		-	7.3	-
Switching Characteristics
Turn-On Delay Time	Td(on)	VDD=-15V ,VGS=-10V , RG=3.3, ID=-9A	-	16	-	nS
Rise Time	Tr		-	21	-
Turn-Off Delay Time	Td(off)		-	43	-
Fall Time	Tf		-	17	-
Diode Characteristics
Diode Forward Voltage	VSD	VGS=0V , IS=-1A	-	-	-1.2	V
Maximum Body-Diode Continuous Current	IS		-	-	-13	A
Reverse Recovery Time	Trr	IS=-5A, di/dt=100A/us, TJ=25	-	12	-	nS
Reverse Recovery Charge	Qrr		-	3.5	-	nC
Package Information (SOP-8L)
Symbol	Dimensions (mm) Min.	Dimensions (mm) Max.
A	1.35	1.75
A1	0.10	0.25
A2	1.35	1.55
b	0.33	0.51
c	0.17	0.25
D	4.80	5.00
e	1.27 REF.
E	5.80	6.20
E1	3.80	4.00
L	0.40	1.27
	0	8