Surface Mount Siliup SP010P190T8 100V P Channel MOSFET Featuring 210m RDSon at 4.5V and 3.5A Current
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MOQ:
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Delivery Time:
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Product Description
Product Overview
The SP010P190T8 is a 100V P-Channel MOSFET from Siliup Semiconductor Technology Co. Ltd. Designed for high power and current handling capability, this surface-mount device is suitable for applications such as battery switches and DC/DC converters. It offers a typical RDS(on) of 190m at -10V and 210m at -4.5V, with a continuous drain current of -3.5A.
Product Attributes
- Brand: Siliup Semiconductor Technology Co. Ltd.
- Device Code: 10P19
- Package: SOT-89
Technical Specifications
| Parameter | Symbol | Conditions | Min. | Typ. | Max. | Unit |
|---|---|---|---|---|---|---|
| Product Summary | ||||||
| Drain-Source Voltage | V(BR)DSS | -100 | V | |||
| Static Drain-Source On-Resistance | RDS(on) | -10V | 190 | m | ||
| Static Drain-Source On-Resistance | RDS(on) | -4.5V | 210 | m | ||
| Continuous Drain Current | ID | -3.5 | A | |||
| Absolute Maximum Ratings (Ta=25, unless otherwise noted) | ||||||
| Drain-Source Voltage | VDSS | -100 | V | |||
| Gate-Source Voltage | VGSS | 20 | V | |||
| Continuous Drain Current | ID | -3.5 | A | |||
| Pulse Drain Current | IDM | Tested | -14 | A | ||
| Power Dissipation | PD | 2.5 | W | |||
| Thermal Resistance Junction-to-Ambient | RJA | 50 | C/W | |||
| Storage Temperature Range | TSTG | -55 | 150 | C | ||
| Operating Junction Temperature Range | TJ | -55 | 150 | C | ||
| Electrical Characteristics (Ta=25, unless otherwise noted) | ||||||
| Drain-Source Breakdown Voltage | BVDSS | VGS=0V , ID=-250A | -100 | - | - | V |
| Drain-Source Leakage Current | IDSS | VDS=-80V , VGS=0V | - | - | -1 | uA |
| Gate-Source Leakage Current | IGSS | VGS=20V , VDS=0V | - | - | 100 | nA |
| Gate Threshold Voltage | VGS(th) | VDS=VGS , ID=-250A | -1.0 | -1.5 | -2.5 | V |
| Static Drain-Source On-Resistance | RDS(ON) | VGS=-10V , ID=-0.5A | - | 190 | 250 | m |
| Static Drain-Source On-Resistance | RDS(ON) | VGS=-4.5V , ID=-0.4A | - | 210 | 300 | m |
| Input Capacitance | Ciss | VDS=-25V , VGS=0V , f=1MHz | - | 1239 | - | pF |
| Output Capacitance | Coss | - | 42 | - | ||
| Reverse Transfer Capacitance | Crss | - | 38 | - | ||
| Total Gate Charge | Qg | VDS=-60V , VGS=-10V , ID=-3A | - | 17.5 | - | nC |
| Gate-Source Charge | Qgs | - | 2.8 | - | ||
| Gate-Drain Charge | Qgd | - | 3.2 | - | ||
| Turn-On Delay Time | td(on) | VDD=-50V VGS=-10V , RG=10, ID=-3A | - | 9.1 | - | nS |
| Turn-On Rise Time | tr | - | 14.9 | - | ||
| Turn-Off Delay Time | td(off) | - | 57.4 | - | ||
| Turn-Off Fall Time | tf | - | 34.4 | - | ||
| Diode Forward Voltage | VSD | VGS=0V , IS=-1A , TJ=25 | - | - | -1.2 | V |
| Package Information (SOT-89) | ||||||
| Symbol | Dimensions In Millimeters | Min. | Max. | |||
| A | 1.400 | 1.600 | ||||
| b | 0.320 | 0.520 | ||||
| b1 | 0.400 | 0.580 | ||||
| c | 0.350 | 0.440 | ||||
| D | 4.400 | 4.600 | ||||
| D1 | 1.550 | REF. | ||||
| D2 | 1.750 | REF. | ||||
| E | 2.300 | 2.600 | ||||
| E1 | 3.940 | 4.250 | ||||
| E2 | 1.900 | REF. | ||||
| e | 1.500 | TYP. | ||||
| e1 | 3.000 | TYP. | ||||
| L | 0.900 | 1.200 | ||||
| 45 | ||||||
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