Fast Switching 40V P Channel MOSFET Siliup SP40P04NK with ROHS Compliance and Halogen Free Materials
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MOQ:
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Delivery Time:
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Product Description
Product Overview
The SP40P04NK is a 40V P-Channel MOSFET from Siliup Semiconductor Technology Co. Ltd. Designed for surface mounting, it features fast switching speeds, ROHS compliance, and Halogen-Free materials. This MOSFET is 100% tested for single pulse avalanche energy, making it suitable for applications such as DC-DC converters and motor control.
Product Attributes
- Brand: Siliup Semiconductor Technology Co. Ltd.
- Material: Silicon
- Package: PDFN5X6-8L
- Compliance: ROHS Compliant & Halogen-Free
- Testing: 100% Single Pulse avalanche energy Test
Technical Specifications
| Parameter | Symbol | Conditions | Min. | Typ. | Max. | Unit |
|---|---|---|---|---|---|---|
| Product Summary | ||||||
| Breakdown Voltage (Drain-Source) | V(BR)DSS | -40 | V | |||
| On-Resistance (Typical) | RDS(on)TYP | @-10V | 4.9 | m | ||
| On-Resistance (Typical) | RDS(on)TYP | @-4.5V | 6.6 | m | ||
| Continuous Drain Current | ID | -85 | A | |||
| Absolute Maximum Ratings | ||||||
| Drain-Source Voltage | VDSS | (Ta=25, unless otherwise noted) | -40 | V | ||
| Gate-Source Voltage | VGSS | (Ta=25, unless otherwise noted) | 20 | V | ||
| Continuous Drain Current | ID | (Tc=25C) | -85 | A | ||
| Continuous Drain Current | ID | (Tc=100C) | -57 | A | ||
| Pulse Drain Current | IDM | Tested | -340 | A | ||
| Single pulsed avalanche energy | EAS | 1 | 576 | mJ | ||
| Power Dissipation | PD | (Tc=25C) | 95 | W | ||
| Thermal Resistance (Junction-to-Case) | RJC | 1.31 | C/W | |||
| Storage Temperature Range | TSTG | -55 | 150 | C | ||
| Operating Junction Temperature Range | TJ | -55 | 150 | C | ||
| Electrical Characteristics | ||||||
| Drain-Source Breakdown Voltage | BVDSS | VGS=0V , ID=-250uA | -40 | - | - | V |
| Drain-Source Leakage Current | IDSS | VDS=-32V , VGS=0V , TJ=25 | - | - | -1 | uA |
| Gate-Source Leakage Current | IGSS | VGS=20V , VDS=0V | - | - | 100 | nA |
| Gate Threshold Voltage | VGS(th) | VGS=VDS , ID =-250uA | -1.0 | -1.7 | -2.5 | V |
| Static Drain-Source On-Resistance | RDS(ON) | VGS =-10V, ID =-20A | - | 4.9 | 6.1 | m |
| Static Drain-Source On-Resistance | RDS(ON) | VGS =-4.5V, ID =-20A | - | 6.6 | 8.8 | m |
| Dynamic Characteristics | ||||||
| Input Capacitance | Ciss | VDS=-20V,VGS=0V,f=1MHz | - | 6456 | - | pF |
| Output Capacitance | Coss | - | 508 | - | pF | |
| Reverse Transfer Capacitance | Crss | - | 441 | - | pF | |
| Total Gate Charge | Qg | VDS=-20V,VGS=-10V,ID=-20A | - | 74 | - | nC |
| Gate-Source Charge | Qgs | - | 22 | - | nC | |
| Gate-Drain Charge | Qg d | - | 18 | - | nC | |
| Switching Characteristics | ||||||
| Turn-On Delay Time | Td(on) | VDD=-20V,ID=-20A,VGS=-10V,RG=2.4 | - | 10 | - | nS |
| Rise Time | Tr | - | 15 | - | nS | |
| Turn-Off Delay Time | Td(off) | - | 93 | - | nS | |
| Fall Time | Tf | - | 20 | - | nS | |
| Diode Characteristics | ||||||
| Diode Forward Voltage | VSD | VGS=0V,IS=-1A,TJ=25 | - | - | 1.2 | V |
| Maximum Body-Diode Continuous Current | IS | - | - | -85 | A | |
| Reverse recovery time | Trr | IS=-20A,di/dt=100A/us,TJ=25 | - | 30 | - | nS |
| Reverse recovery charge | Qrr | - | 21 | - | nC | |
| Package Information (PDFN5X6-8L) | ||||||
| Symbol | Dimensions In Millimeters | Dimensions In Inches | Min. | Max. | Min. | Max. |
| A | 0.900 | 1.000 | 0.035 | 0.039 | ||
| A3 | 0.254REF. | 0.010REF. | ||||
| D | 4.944 | 5.096 | 0.195 | 0.201 | ||
| E | 5.974 | 6.126 | 0.235 | 0.241 | ||
| D1 | 3.910 | 4.110 | 0.154 | 0.162 | ||
| E1 | 3.375 | 3.575 | 0.133 | 0.141 | ||
| D2 | 4.824 | 4.976 | 0.190 | 0.196 | ||
| E2 | 5.674 | 5.826 | 0.223 | 0.229 | ||
| k | 1.190 | 1.390 | 0.047 | 0.055 | ||
| b | 0.350 | 0.450 | 0.014 | 0.018 | ||
| e | 1.270TYP. | 0.050TYP. | ||||
| L | 0.559 | 0.711 | 0.022 | 0.028 | ||
| L1 | 0.424 | 0.576 | 0.017 | 0.023 | ||
| H | 0.574 | 0.726 | 0.023 | 0.029 | ||
| 10 | 12 | 10 | 12 | |||
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