30V Dual N Channel MOSFET Siliup SP30N10DNJ with Low On Resistance and High Avalanche Energy Capability
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Negotiable
MOQ:
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Delivery Time:
Negotiable
Product Description
Product Overview
The SP30N10DNJ is a 30V Dual N-Channel MOSFET from Siliup Semiconductor Technology Co., Ltd. It features fast switching speed, low on-resistance (10m@10V, 15m@4.5V), and 100% single pulse avalanche energy tested. This MOSFET is suitable for applications such as DC-DC converters and power management. It is available in a PDFN3X3-8L package.
Product Attributes
- Brand: Siliup Semiconductor Technology Co., Ltd.
- Device Code: 30N10D
- Package: PDFN3X3-8L
Technical Specifications
| Parameter | Symbol | Conditions | Min. | Typ. | Max. | Unit |
|---|---|---|---|---|---|---|
| Product Summary | ||||||
| V(BR)DSS | V(BR)DSS | 30 | V | |||
| RDS(on)TYP | RDS(on) | 10V | 10 | m | ||
| RDS(on)TYP | RDS(on) | 4.5V | 15 | m | ||
| ID | ID | 12 | A | |||
| Absolute Maximum Ratings | ||||||
| Drain-Source Voltage | VDSS | 30 | V | |||
| Gate-Source Voltage | VGSS | 20 | V | |||
| Continuous Drain Current (Tc=25C) | ID | 12 | A | |||
| Continuous Drain Current (Tc=100C) | ID | 8 | A | |||
| Pulse Drain Current Tested | IDM | 48 | A | |||
| Single Pulse Avalanche Energy1 | EAS | 46 | mJ | |||
| Power Dissipation (Tc=25C) | PD | 15 | W | |||
| Thermal Resistance Junction-to-Case | RJC | 8.3 | C/W | |||
| Storage Temperature Range | TSTG | -55 | 150 | C | ||
| Operating Junction Temperature Range | TJ | -55 | 150 | C | ||
| Electrical Characteristics | ||||||
| Drain-Source Breakdown Voltage | BVDSS | VGS=0V , ID=250uA | 30 | - | - | V |
| Drain-Source Leakage Current | IDSS | VDS=24V , VGS=0V , TJ=25 | - | - | 1 | uA |
| Gate-Source Leakage Current | IGSS | VGS=20V , VDS=0V | - | - | 100 | nA |
| Gate Threshold Voltage | VGS(th) | VGS=VDS , ID =250uA | 1.0 | 1.5 | 2.5 | V |
| Static Drain-Source On-Resistance | RDS(ON) | VGS=10V, ID=12A | - | 10 | 14 | m |
| Static Drain-Source On-Resistance | RDS(ON) | VGS=4.5V, ID=10A | - | 15 | 21 | m |
| Dynamic Characteristics | ||||||
| Input Capacitance | Ciss | VDS=15V , VGS=0V , f=1MHz | - | 940 | - | pF |
| Output Capacitance | Coss | - | 131 | - | pF | |
| Reverse Transfer Capacitance | Crss | - | 109 | - | pF | |
| Total Gate Charge | Qg | VDS=15V , VGS=4.5V , ID=8A | - | 9.6 | - | nC |
| Gate-Source Charge | Qgs | - | 3.9 | - | nC | |
| Gate-Drain Charge | Qgd | - | 3.4 | - | nC | |
| Switching Characteristics | ||||||
| Turn-On Delay Time | Td(on) | VDD=15V VGS=10V , RG=1.5, ID=8A | - | 4.2 | - | nS |
| Rise Time | Tr | - | 8.2 | - | nS | |
| Turn-Off Delay Time | Td(off) | - | 31 | - | nS | |
| Fall Time | Tf | - | 4 | - | nS | |
| Diode Characteristics | ||||||
| Diode Forward Voltage | VSD | VGS=0V , IS=1A , TJ=25 | - | - | 1.2 | V |
| Maximum Body-Diode Continuous Current | IS | - | - | 12 | A | |
| Reverse recover time | Trr | IS=10A, di/dt=100A/us, Tj=25 | - | 1.2 | - | nS |
| Reverse recovery charge | Qrr | - | 9 | - | nC | |
| Package Dimensions (PDFN3X3-8L) | ||||||
| Symbol | Dimensions In Millimeters | Dimensions In Inches | Min. | Max. | Min. | Max. |
| A | 0.650 - 0.850 | 0.026 - 0.033 | ||||
| A1 | 0.152 REF. | 0.006 REF. | ||||
| A2 | 0 - 0.05 | 0 - 0.002 | ||||
| D | 2.900 - 3.100 | 0.114 - 0.122 | ||||
| D1 | 0.935 - 1.135 | 0.037 - 0.045 | ||||
| D2 | 0.280 - 0.480 | 0.011 - 0.019 | ||||
| E | 2.900 - 3.100 | 0.114 - 0.122 | ||||
| E1 | 3.150 - 3.450 | 0.124 - 0.136 | ||||
| E2 | 1.535 - 1.935 | 0.060 - 0.076 | ||||
| b | 0.200 - 0.400 | 0.008 - 0.016 | ||||
| e | 0.550 - 0.750 | 0.022 - 0.030 | ||||
| L | 0.300 - 0.500 | 0.012 - 0.020 | ||||
| L1 | 0.180 - 0.480 | 0.007 - 0.019 | ||||
| L2 | 0 - 0.100 | 0 - 0.004 | ||||
| L3 | 0 - 0.100 | 0 - 0.004 | ||||
| H | 0.315 - 0.515 | 0.012 - 0.020 | ||||
| 9 - 13 | 9 - 13 | |||||
Note: 1. The EAS test condition is VDD=20V, VG=10V, L=0.5mH, Rg=25
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