P Channel MOSFET Siliup SP2006KT7 Featuring 20V Drain Source Voltage and 2KV ESD Protection for Power Management
Price:
Negotiable
MOQ:
Negotiable
Delivery Time:
Negotiable
Product Description
Product Overview
The SP2006KT7 is a 20V P-Channel MOSFET from Siliup Semiconductor Technology Co. Ltd. This surface mount device offers high power and current handling capability, along with ESD protection up to 2KV. It is designed for applications such as battery switches and DC/DC converters.
Product Attributes
- Brand: Siliup Semiconductor Technology Co. Ltd.
- Product Type: P-Channel MOSFET
- Package: SOT-723
- ESD Protection: 2KV
Technical Specifications
| Parameter | Symbol | Conditions | Min. | Typ. | Max. | Unit |
|---|---|---|---|---|---|---|
| Product Summary | ||||||
| Drain-Source Voltage | V(BR)DSS | -20 | V | |||
| Static Drain-Source On-Resistance | RDS(on) | @-4.5V | 650 | 750 | m | |
| Static Drain-Source On-Resistance | RDS(on) | @-2.5V | 850 | 1000 | m | |
| Continuous Drain Current | ID | -0.66 | A | |||
| Absolute Maximum Ratings (Ta=25, unless otherwise noted) | ||||||
| Drain-Source Voltage | VDSS | -20 | V | |||
| Gate-Source Voltage | VGSS | 12 | V | |||
| Continuous Drain Current | ID | -0.66 | A | |||
| Pulse Drain Current | IDM | Tested | -2.64 | A | ||
| Power Dissipation | PD | 150 | mW | |||
| Thermal Resistance Junction-to-Ambient | RJA | 833 | C/W | |||
| Storage Temperature Range | TSTG | -55 | 150 | C | ||
| Operating Junction Temperature Range | TJ | -55 | 150 | C | ||
| Electrical Characteristics (Ta=25, unless otherwise noted) | ||||||
| Drain-Source Breakdown Voltage | BVDSS | VGS=0V , ID=-250A | -20 | V | ||
| Drain-Source Leakage Current | IDSS | VDS=-16V , VGS=0V | -1 | uA | ||
| Gate-Source Leakage Current | IGSS | VGS=12V , VDS=0V | 10 | uA | ||
| Gate Threshold Voltage | VGS(th) | VDS=VGS , ID=-250A | -0.35 | -0.65 | -1.00 | V |
| Static Drain-Source On-Resistance | RDS(ON) | VGS=-4.5V , ID=-500mA | 650 | 750 | m | |
| Static Drain-Source On-Resistance | RDS(ON) | VGS=-2.5V , ID=-200mA | 850 | 1000 | m | |
| Input Capacitance | Ciss | VDS=-10V , VGS=0V , f=1MHz | 75 | pF | ||
| Output Capacitance | Coss | 20 | ||||
| Reverse Transfer Capacitance | Crss | 14 | ||||
| Total Gate Charge | Qg | VDS=-10V , VGS=-4.5V , ID=-0.5A | 1.25 | nC | ||
| Gate-Source Charge | Qgs | 0.35 | ||||
| Gate-Drain Charge | Qg | 0.27 | ||||
| Turn-On Delay Time | td(on) | VDD=-10V VGS=-4.5V , RG=3 , RL=2.5 | 5 | nS | ||
| Turn-On Rise Time | tr | 19 | ||||
| Turn-Off Delay Time | td(off) | 15 | ||||
| Turn-Off Fall Time | tf | 24 | ||||
| Diode Forward Voltage | VSD | VGS=0V , IS=-1A , TJ=25 | -1.2 | V | ||
| Package Information (SOT-723) | ||||||
| Symbol | Dimensions (mm) | Min. | Max. | |||
| A | 0.430 | 0.500 | ||||
| A1 | 0.000 | 0.050 | ||||
| b | 0.170 | 0.270 | ||||
| b1 | 0.270 | 0.370 | ||||
| c | 0.080 | 0.150 | ||||
| D | 1.150 | 1.250 | ||||
| E | 1.150 | 1.250 | ||||
| E1 | 0.750 | 0.850 | ||||
| e | 0.800 (TYP.) | |||||
| 7 (REF.) | ||||||
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