Power MOSFET Siliup SP010N03BGHTF 100V N Channel with Low Gate Charge and High Reliability Performance
Price:
Negotiable
MOQ:
Negotiable
Delivery Time:
Negotiable
Product Description
Product Overview
The SP010N03BGHTF is a 100V N-Channel Power MOSFET from Siliup Semiconductor Technology Co. Ltd. Designed for power switching applications, DC-DC converters, and power management, this MOSFET features fast switching, low gate charge, and low Rdson. It is built with a focus on efficiency and reliability in demanding electronic systems.
Product Attributes
- Brand: Siliup Semiconductor Technology Co. Ltd.
- Product Code: SP010N03BGH
- Package: TO-247
Technical Specifications
| Parameter | Symbol | Test Condition | Min | Typ | Max | Unit |
|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDS | 100 | V | |||
| Gate-Source Voltage | VGS | 20 | V | |||
| Continuous Drain Current (Tc=25) | ID | 210 | A | |||
| Continuous Drain Current (Tc=100) | ID | 140 | A | |||
| Pulsed Drain Current | IDM | 840 | A | |||
| Single Pulse Avalanche Energy | EAS | 3136 | mJ | |||
| Power Dissipation (Tc=25) | PD | 235 | W | |||
| Thermal Resistance Junction-to-Case | RJC | 0.53 | /W | |||
| Storage Temperature Range | TSTG | -55 | 150 | |||
| Operating Junction Temperature Range | TJ | -55 | 150 | |||
| Drain-Source Breakdown Voltage | BVDSS | VGS=0V , ID=250uA | 100 | - | - | V |
| Drain Cut-Off Current | IDSS | VDS=80V , VGS=0V , TJ=25 | - | - | 1 | A |
| Gate Leakage Current | IGSS | VGS=20V , VDS=0V | - | - | 100 | nA |
| Gate Threshold Voltage | VGS(th) | VGS=VDS , ID =250uA | 2.0 | 2.8 | 4.0 | V |
| Drain-Source ON Resistance | RDS(ON) | VGS=10V , ID=20A | - | 3.2 | 4.5 | m |
| Input Capacitance | Ciss | VDS=50V , VGS=0V , f=1MHz | - | 4398 | - | pF |
| Output Capacitance | Coss | - | 1361 | - | pF | |
| Reverse Transfer Capacitance | Crss | - | 8.5 | - | ||
| Total Gate Charge | Qg | VDS=50V , VGS=10V , ID=125A | - | 90 | - | nC |
| Gate-Source Charge | Qgs | - | 13 | - | ||
| Gate-Drain Charge | Qg | - | 19 | - | ||
| Turn-On Delay Time | td(on) | VDD=50V, VGS=10V , RG=1.6, ID=125A | - | 20 | - | nS |
| Rise Time | tr | - | 70 | - | ||
| Turn-Off Delay Time | td(off) | - | 50 | - | ||
| Fall Time | tf | - | 16 | - | ||
| Source-Drain Diode Forward Voltage | VSD | IS = 1A, VGS = 0V | - | - | 1.2 | V |
| Maximum Body-Diode Continuous Current | IS | - | - | 210 | A | |
| Reverse Recovery Time | Trr | IS=50A, di/dt=100A/us, TJ=25 | - | 86 | - | nS |
| Reverse Recovery Charge | Qrr | - | 206 | - | nC |
Package Information (TO-247)
| Symbol | Dimensions In Millimeters | Dimensions In Inches | ||
|---|---|---|---|---|
| Min. | Max. | Min. | Max. | |
| A | 4.850 | 5.150 | 0.191 | 0.200 |
| A1 | 2.200 | 2.600 | 0.087 | 0.102 |
| b | 1.000 | 1.400 | 0.039 | 0.055 |
| b1 | 2.800 | 3.200 | 0.110 | 0.126 |
| b2 | 1.800 | 2.200 | 0.071 | 0.087 |
| c | 0.500 | 0.700 | 0.020 | 0.028 |
| c1 | 1.900 | 2.100 | 0.075 | 0.083 |
| D | 15.450 | 15.750 | 0.608 | 0.620 |
| E1 | 3.500 REF. | 0.138 REF. | ||
| E2 | 3.600 REF. | 0.142 REF. | ||
| L | 40.900 | 41.300 | 1.610 | 1.626 |
| L1 | 24.800 | 25.100 | 0.976 | 0.988 |
| L2 | 20.300 | 20.600 | 0.799 | 0.811 |
| 7.100 | 7.300 | 0.280 | 0.287 | |
| e | 5.450 TYP. | 0.215 TYP. | ||
| H | 5.980 REF. | 0.235 REF. | ||
| h | 0.000 | 0.300 | 0.000 | 0.012 |
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