P Channel MOSFET Siliup SP30P25T8 30V Surface Mount Device Designed for Battery Switch and Converter

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Product Description

Product Overview

The SP30P25T8 is a 30V P-Channel MOSFET from Siliup Semiconductor Technology Co. Ltd. Designed for high power and current handling, this surface-mount device is suitable for applications such as battery switches and DC/DC converters. It offers a low on-resistance and robust performance characteristics.

Product Attributes

Brand: Siliup Semiconductor Technology Co. Ltd.
Product Line: SP30P25T8
Technology: P-Channel MOSFET
Package: SOT-89

Technical Specifications

Parameter	Symbol	Conditions	Min.	Typ.	Max.	Unit
Product Summary
Drain-Source Voltage	V(BR)DSS				-30	V
On-Resistance (Typical)	RDS(on)TYP	@ -10V		25		m
On-Resistance (Typical)	RDS(on)TYP	@ -4.5V		36		m
Continuous Drain Current	ID				-6	A
Absolute Maximum Ratings (Ta=25, unless otherwise noted)
Drain-Source Voltage	VDSS				-30	V
Gate-Source Voltage	VGSS				20	V
Continuous Drain Current	ID				-6	A
Pulse Drain Current	IDM	Tested			-24	A
Power Dissipation	PD				1.5	W
Thermal Resistance Junction-to-Ambient	RJA			83.3		C/W
Storage Temperature Range	TSTG		-55		150	C
Operating Junction Temperature Range	TJ		-55		150	C
Electrical Characteristics (Ta=25, unless otherwise noted)
Drain-Source Breakdown Voltage	BVDSS	VGS=0V , ID=-250A	-30	-	-	V
Drain-Source Leakage Current	IDSS	VDS=-24V , VGS=0V	-	-	-1	uA
Gate-Source Leakage Current	IGSS	VGS=20V , VDS=0V	-	-	100	nA
Gate Threshold Voltage	VGS(th)	VDS=VGS , ID=-250A	-1.0	-1.5	-2.5	V
Static Drain-Source On-Resistance	RDS(ON)	VGS=-10V , ID =-4A	-	25	32	m
Static Drain-Source On-Resistance	RDS(ON)	VGS=-4.5V , ID =-2A	-	36	45	m
Dynamic Characteristics
Input Capacitance	Ciss	VDS=-15V , VGS=0V , f=1MHz	-	870	-	pF
Output Capacitance	Coss		-	130	-	pF
Reverse Transfer Capacitance	Crss		-	93	-	pF
Total Gate Charge	Qg	VDS=-15V , VGS=-4.5V , ID=-5A	-	7.8	-	nC
Gate-Source Charge	Qgs		-	2.7	-
Gate-Drain Charge	Qg d		-	2.8	-
Switching Characteristics
Turn-On Delay Time	td(on)	VDD=-15V VGS=-10V , RG=6 , ID=-1A	-	6.5	-	nS
Turn-On Rise Time	tr		-	8.8	-
Turn-Off Delay Time	td(off)		-	73	-
Turn-Off Fall Time	tf		-	44	-
Source-Drain Diode Characteristics
Diode Forward Voltage	VSD	VGS=0V , IS=-1A , TJ=25	-	-	-1.2	V
Package Outline (SOT-89)
Symbol	Dimensions In Millimeters	Min.	Max.
A		1.400	1.600
b		0.320	0.520
b1		0.400	0.580
c		0.350	0.440
D		4.400	4.600
D1		1.550	REF.
D2		1.750	REF.
E		2.300	2.600
E1		3.940	4.250
E2		1.900	REF.
e		1.500	TYP.
e1		3.000	TYP.
L		0.900	1.200
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