Siliup SP30N05TH N Channel MOSFET 30 Volt with Low RDS on and Single Pulse Avalanche Energy Testing

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Product Description

Product Overview

The SP30N05TH is a 30V N-Channel MOSFET from Siliup Semiconductor Technology Co. Ltd. It features fast switching, low gate charge, and low RDS(on) with typical values of 5m at 10V and 6.5m at 4.5V. This MOSFET is designed for applications such as DC-DC converters and load switching, offering 100% single pulse avalanche energy testing. The device is supplied in a TO-252 package.

Product Attributes

Brand: Siliup Semiconductor Technology Co. Ltd.
Product Code: SP30N05TH
Channel Type: N-Channel
Package: TO-252

Technical Specifications

Parameter	Symbol	Conditions	Min.	Typ.	Max.	Units
Product Summary
V(BR)DSS					30	V
RDS(on)TYP		@10V		5		m
RDS(on)TYP		@4.5V		6.5		m
ID					65	A
Absolute Maximum Ratings
Drain-Source Voltage	VDS	(Ta=25, unless otherwise noted)			30	V
Gate-Source Voltage	VGS				20	V
Continuous Drain Current	ID	(TC=25)			65	A
Continuous Drain Current	ID	(TC=100)			43	A
Pulsed Drain Current	IDM				260	A
Single Pulse Avalanche Energy	EAS	1			14	mJ
Power Dissipation	PD	(TC=25)			35	W
Thermal Resistance Junction-to-Case	RJC			3.6		/W
Storage Temperature Range	TSTG		-55		150
Operating Junction Temperature Range	TJ		-55		150
Electrical Characteristics
Drain-Source Breakdown Voltage	BVDSS	VGS=0V , ID=250uA	30	-	-	V
Drain-Source Leakage Current	IDSS	VDS=24V , VGS=0V , TJ=25	-	-	1	uA
Gate-Source Leakage Current	IGSS	VGS=20V , VDS=0V	-	-	100	nA
Gate Threshold Voltage	VGS(th)	VGS=VDS , ID =250uA	1.0	1.5	2.5	V
Static Drain-Source On-Resistance	RDS(ON)	VGS=10V , ID=20A	-	5	6.5	m
Static Drain-Source On-Resistance	RDS(ON)	VGS=4.5V , ID=10A	-	6.5	9	m
Input Capacitance	Ciss	VDS=15V , VGS=0V , f=1MHz	-	1460	-	pF
Output Capacitance	Coss		-	200	-	pF
Reverse Transfer Capacitance	Crss		-	180	-	pF
Total Gate Charge	Qg	VDS=15V , VGS=10V , ID=30A	-	34	-	nC
Gate-Source Charge	Qgs		-	6.5	-	nC
Gate-Drain Charge	Qgd		-	7	-	nC
Turn-On Delay Time	Td(on)	VDD=15V, VGS=4.5V , RG=6, ID=30A	-	7.5	-	nS
Rise Time	Tr		-	14.5	-	nS
Turn-Off Delay Time	Td(off)		-	35.2	-	nS
Fall Time	Tf		-	9.6	-	nS
Diode Forward Voltage	VSD	VGS=0V , IS=1A , TJ=25	-	-	1.2	V
Maximum Body-Diode Continuous Current	IS		-	-	65	A
Reverse Recovery Time	Trr	IS=20A, di/dt=100A/us, TJ=25	-	11	-	nS
Reverse Recovery Charge	Qrr		-	2.1	-	nC

TO-252 Package Information
Symbol	Dimensions In Millimeters	Dimensions In Inches
Min.	Max.	Min.	Max.
A	2.200	2.400	0.087	0.094
A1	0.000	0.127	0.000	0.005
b	0.660	0.860	0.026	0.034
c	0.460	0.580	0.018	0.023
D	6.500	6.700	0.256	0.264
D1	5.100	5.460	0.201	0.215
D2	4.830 REF.	0.190 REF.
E	6.000	6.200	0.236	0.244
e	2.186	2.386	0.086	0.094
L	9.800	10.400	0.386	0.409
L1	2.900 REF.	0.114 REF.
L2	1.400	1.700	0.055	0.067
L3	1.600 REF.	0.063 REF.
L4	0.600	1.000	0.024	0.039
	1.100	1.300	0.043	0.051
	0	8	0	8
h	0.000	0.300	0.000	0.012
V	5.350 REF.	0.211 REF.