150V P Channel MOSFET Siliup SP015P80GTQ with Split Gate Trench Technology and High Current Capacity

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Product Description

Product Overview

The SP015P80GTQ is a 150V P-Channel Power MOSFET from Siliup Semiconductor Technology Co. Ltd. It features fast switching, low gate charge, and low RDS(on) thanks to its advanced split gate trench technology. This MOSFET is 100% tested for single pulse avalanche energy and is suitable for power switching applications, DC-DC converters, and power management systems.

Product Attributes

Brand: Siliup Semiconductor Technology Co. Ltd.
Product Code: SP015P80GTQ
Package: TO-220-3L
Circuit Diagram Marking: 015P80G

Technical Specifications

Parameter	Symbol	Test Condition	Min	Typ	Max	Units
Product Summary
Drain-Source Voltage	V(BR)DSS		-150			V
Drain-Source ON Resistance	RDS(on)	@ -10V		85		m
Drain-Source ON Resistance	RDS(on)	@ -4.5V		94		m
Continuous Drain Current	ID			-35		A
Absolute Maximum Ratings
Drain-Source Voltage	VDS	(Ta=25)	-150			V
Gate-Source Voltage	VGS	(Ta=25)	-20		20	V
Continuous Drain Current	ID	(Tc=25)			-35	A
Continuous Drain Current	ID	(Tc=100)			-23	A
Pulsed Drain Current	IDM				-140	A
Single Pulse Avalanche Energy	EAS				400	mJ
Power Dissipation	PD	(Tc=25)			155	W
Thermal Resistance Junction-to-Case	RJC				0.81	/W
Storage Temperature Range	TSTG		-55		150
Operating Junction Temperature Range	TJ		-55		150
Electrical Characteristics
Drain-Source Breakdown Voltage	BVDSS	VGS=0V, ID=-250uA	-150			V
Drain Cut-Off Current	IDSS	VDS=-120V, VGS=0V			-1	A
Gate Leakage Current	IGSS	VGS=20V, VDS=0V			100	nA
Gate Threshold Voltage	VGS(th)	VGS=VDS, ID=-250uA	-1	-1.9	-2.5	V
Drain-Source ON Resistance	RDS(ON)	VGS=-10V, ID=-30A		85	106	m
Drain-Source ON Resistance	RDS(ON)	VGS=-4.5V, ID=-20A		94	125	m
Dynamic Characteristics
Input Capacitance	Ciss	VDS=-75V, VGS=0V, f=1MHz		3275		pF
Output Capacitance	Coss			137		pF
Reverse Transfer Capacitance	Crss			14		pF
Total Gate Charge	Qg	VDS=-75V, VGS=-10V, ID=-15A		92		nC
Gate-Source Charge	Qgs			9		nC
Gate-Drain Charge	Qg d			19		nC
Switching Characteristics
Turn-On Delay Time	td(on)	VDD=-75V, VGS=-10V, RG=1.6, ID=-15A		68		nS
Rise Time	tr			18		nS
Turn-Off Delay Time	td(off)			70		nS
Fall Time	tf			35		nS
Drain-Source Body Diode Characteristics
Source-Drain Diode Forward Voltage	VSD	IS=-1A, VGS=0V			-1.2	V
Maximum Body-Diode Continuous Current	IS				-35	A
Reverse Recovery Time	Trr	IS=-15A, di/dt=100A/us, TJ=25		350		nS
Reverse Recovery Charge	Qrr			86		nC

Package Information

TO-220-3L Package Dimensions

Symbol	Dimensions In Millimeters	Dimensions In Inches
	Min.	Max.	Min.	Max.
A	4.400	4.600	0.173	0.181
A1	2.250	2.550	0.089	0.100
b	0.710	0.910	0.028	0.036
b1	1.170	1.370	0.046	0.054
c	0.330	0.650	0.013	0.026
c1	1.200	1.400	0.047	0.055
D	9.910	10.250	0.390	0.404
E	8.950	9.750	0.352	0.384
E1	12.650	13.050	0.498	0.514
e	2.540 TYP.	0.100 TYP.
e1	4.980	5.180	0.196	0.204
F	2.650	2.950	0.104	0.116
H	7.900	8.100	0.311	0.319
h	0.000	0.300	0.000	0.012
L	12.900	13.400	0.508	0.528
L1	2.850	3.250	0.112	0.128
V	6.900 REF.	0.276 REF.
	3.400	3.800	0.134	0.150