Surface Mount N Channel MOSFET Siliup SP6003T2 60V 3A Continuous Drain Current for Power Electronics

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Product Description

Product Overview

The SP6003T2 is a 60V N-Channel MOSFET from Siliup Semiconductor Technology Co. Ltd. Designed for high power and current handling, this device is suitable for surface mount applications. Key applications include battery switches and DC/DC converters. It offers a typical RDS(on) of 70m at 10V and 80m at 4.5V, with a continuous drain current of 3A.

Product Attributes

Brand: Siliup Semiconductor Technology Co. Ltd.
Product Line: SP6003T2
Technology: N-Channel MOSFET
Package: SOT-23
Device Code: 6003

Technical Specifications

Parameter	Symbol	Conditions	Min.	Typ.	Max.	Unit
Product Summary
Drain-Source Voltage	V(BR)DSS			60		V
Static Drain-Source On-Resistance	RDS(on)	10V		70		m
Static Drain-Source On-Resistance	RDS(on)	4.5V		80		m
Continuous Drain Current	ID			3		A
Absolute Maximum Ratings (Ta=25, unless otherwise noted)
Drain-Source Voltage	VDSS			60		V
Gate-Source Voltage	VGSS			20		V
Continuous Drain Current	ID			3		A
Pulse Drain Current	IDM	Tested		12		A
Power Dissipation	PD			1.2		W
Thermal Resistance Junction-to-Ambient	RJA			104		C/W
Storage Temperature Range	TSTG		-55		150	C
Operating Junction Temperature Range	TJ		-55		150	C
Electrical Characteristics (Ta=25, unless otherwise noted)
Drain-Source Breakdown Voltage	BVDSS	VGS=0V , ID=250A	60	-	-	V
Drain-Source Leakage Current	IDSS	VDS=48V , VGS=0V	-	-	1	uA
Gate-Source Leakage Current	IGSS	VGS=20V , VDS=0V	-	-	100	nA
Gate Threshold Voltage	VGS(th)	VDS=VGS , ID=250A	0.9	1.3	2.0	V
Static Drain-Source On-Resistance	RDS(ON)	VGS =10V, ID =3A	-	70	90	m
Static Drain-Source On-Resistance	RDS(ON)	VGS =4.5V, ID =2A	-	80	105	m
Dynamic Characteristics
Input Capacitance	Ciss	VDS=30V , VGS=0V , f=1MHz	-	330	-	pF
Output Capacitance	Coss		-	90	-
Reverse Transfer Capacitance	Crss		-	17	-
Total Gate Charge	Qg	VDS=30V , VGS=4.5V , ID=3A	-	5.1	-	nC
Gate-Source Charge	Qgs		-	1.3	-
Gate-Drain Charge	Qg d		-	1.7	-
Switching Characteristics
Turn-On Delay Time	td(on)	VDD=30V VGS=10V , RG=3, ID=2A	-	5	-	nS
Turn-On Rise Time	tr		-	7	-
Turn-Off Delay Time	td(off)		-	36	-
Turn-Off Fall Time	tf		-	21	-
Source-Drain Diode Characteristics
Diode Forward Voltage	VSD	VGS=0V , IS=1A , TJ=25	-	-	1.2	V
Package Information (SOT-23)
Symbol	Dimensions In Millimeters	Min.	Max.
A		0.90	1.15
A1		0.00	0.10
A2		0.90	1.05
b		0.30	0.50
c		0.08	0.15
D		2.80	3.00
E		1.20	1.40
E1		2.25	2.55
e	REF.	0.95
e1		1.80	2.00
L	REF.	0.55
L1		0.30	0.50
		0	8