n channel power mosfet with single pulse avalanche energy test Siliup SP011N01GHTO 110V toll package
Price:
Negotiable
MOQ:
Negotiable
Delivery Time:
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Product Description
Product Overview
The SP011N01GHTO is a 110V N-Channel Power MOSFET from Siliup Semiconductor Technology Co. Ltd. It features fast switching, low gate charge, and low RDS(on) thanks to its advanced split gate trench technology. This MOSFET is 100% tested for single pulse avalanche energy and is suitable for PWM applications, hard switched and high frequency circuits, and power management. It is available in the TOLL package.
Product Attributes
- Brand: Siliup Semiconductor Technology Co. Ltd.
- Product Code: SP011N01GHTO
- Technology: Advanced Split Gate Trench Technology
- Channel Type: N-Channel
- Package: TOLL
Technical Specifications
| Parameter | Symbol | Rating | Unit | Test Condition |
|---|---|---|---|---|
| Drain-Source Voltage | VDS | 110 | V | |
| Gate-Source Voltage | VGS | 20 | V | |
| Continuous Drain Current (Tc=25) | ID | 375 | A | |
| Continuous Drain Current (Tc=100) | ID | 250 | A | |
| Pulsed Drain Current | IDM | 1500 | A | |
| Single Pulse Avalanche Energy | EAS | 2250 | mJ | VDD=50V,VGS=10V,L=0.5mH,RG=25 |
| Power Dissipation (Tc=25) | PD | 396 | W | |
| Thermal Resistance Junction-to-Case | RJC | 0.31 | /W | |
| Storage Temperature Range | TSTG | -55 to 150 | ||
| Operating Junction Temperature Range | TJ | -55 to 150 | ||
| Drain-Source Breakdown Voltage | BVDSS | 110 | V | VGS=0V , ID=250uA |
| Drain Cut-Off Current | IDSS | 1 | A | VDS=90V , VGS=0V , TJ=25 |
| Gate Leakage Current | IGSS | 100 | nA | VGS=20V , VDS=0V |
| Gate Threshold Voltage | VGS(th) | 2.0 - 4.0 | V | VGS=VDS , ID =250uA |
| Drain-Source ON Resistance | RDS(ON) | 1.1 - 1.4 | m | VGS=10V , ID=50A |
| Input Capacitance | Ciss | 12700 | pF | VDS=55V , VGS=0V , f=1MHz |
| Output Capacitance | Coss | 3400 | pF | VDS=55V , VGS=0V , f=1MHz |
| Reverse Transfer Capacitance | Crss | 137 | pF | VDS=55V , VGS=0V , f=1MHz |
| Total Gate Charge | Qg | 216 | nC | VDS=55V , VGS=10V , ID=100A |
| Gate-Source Charge | Qgs | 68 | nC | VDS=55V , VGS=10V , ID=100A |
| Gate-Drain Charge | Qg d | 69 | nC | VDS=55V , VGS=10V , ID=100A |
| Turn-On Delay Time | td(on) | 81 | nS | VDD=55V, VGS=10V , RG=6, ID=100A |
| Rise Time | tr | 176 | nS | VDD=55V, VGS=10V , RG=6, ID=100A |
| Turn-Off Delay Time | td(off) | 165 | nS | VDD=55V, VGS=10V , RG=6, ID=100A |
| Fall Time | tf | 62 | nS | VDD=55V, VGS=10V , RG=6, ID=100A |
| Source-Drain Diode Forward Voltage | VSD | 1.2 | V | IS = 1A, VGS = 0V |
| Maximum Body-Diode Continuous Current | IS | 375 | A | |
| Reverse Recovery Time | Trr | 87 | nS | IS=100A, di/dt=100A/us, TJ=25 |
| Reverse Recovery Charge | Qrr | 201 | nC | IS=100A, di/dt=100A/us, TJ=25 |
Package Information (TOLL)
| Symbol | Dimensions (mm) |
|---|---|
| A | 2.20 - 2.40 |
| b | 0.65 - 0.85 |
| C | 0.508 REF |
| D | 10.25 - 10.55 |
| D1 | 2.85 - 3.15 |
| E | 9.75 - 10.05 |
| E1 | 9.65 - 9.95 |
| E2 | 8.95 - 9.25 |
| E3 | 7.25 - 7.55 |
| e | 1.20 BSC |
| F | 1.05 - 1.35 |
| H | 11.55 - 11.85 |
| H1 | 6.03 - 6.33 |
| H2 | 6.85 - 7.15 |
| H3 | 3.00 BSC |
| L | 1.55 - 1.85 |
| L1 | 0.55 - 0.85 |
| L2 | 0.45 - 0.75 |
| M | 0.08 REF |
| 8 - 12 | |
| K | 4.25 - 4.55 |
Order Information
| Device | Package | Unit/Tape |
|---|---|---|
| SP011N01GHTO | TOLL | 2000 |
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