40V N Channel MOSFET Siliup SP40N06NK with surface mount package and ROHS compliant halogen free design
Price:
Negotiable
MOQ:
Negotiable
Delivery Time:
Negotiable
Product Description
Product Overview
The SP40N06NK is a 40V N-Channel MOSFET from Siliup Semiconductor Technology Co. Ltd., designed for efficient power management. It features fast switching speeds, a surface mount package, and is ROHS Compliant & Halogen-Free. This MOSFET is 100% Single Pulse avalanche energy tested and is suitable for applications such as DC-DC Converters and Motor Control.
Product Attributes
- Brand: Siliup Semiconductor Technology Co. Ltd.
- Product Code: SP40N06NK
- Technology: N-Channel MOSFET
- Compliance: ROHS Compliant & Halogen-Free
- Testing: 100% Single Pulse avalanche energy Test
- Package: PDFN5X6-8L
- Marking: SP40N06NK (Device Code), * (Month Code)
Technical Specifications
| Parameter | Symbol | Conditions | Min. | Typ. | Max. | Unit |
|---|---|---|---|---|---|---|
| Product Summary | ||||||
| V(BR)DSS | V(BR)DSS | 40 | V | |||
| RDS(on)TYP | RDS(on)TYP | @10V | 6.3 | m | ||
| RDS(on)TYP | RDS(on)TYP | @4.5V | 9.5 | m | ||
| ID | ID | 60 | A | |||
| Absolute Maximum Ratings | ||||||
| Drain-Source Voltage | VDSS | 40 | V | |||
| Gate-Source Voltage | VGSS | -20 | 20 | V | ||
| Continuous Drain Current (Tc=25C) | ID | (Tc=25C) | 60 | A | ||
| Continuous Drain Current (Tc=100C) | ID | (Tc=100C) | 40 | A | ||
| Pulse Drain Current Tested | IDM | 240 | A | |||
| Single pulsed avalanche energy | EAS | 96 | mJ | |||
| Power Dissipation (Tc=25C) | PD | (Tc=25C) | 46 | W | ||
| Thermal Resistance Junction-to-Case | RJC | 2.7 | C/W | |||
| Storage Temperature Range | TSTG | -55 | 150 | C | ||
| Operating Junction Temperature Range | TJ | -55 | 150 | C | ||
| Electrical Characteristics | ||||||
| Drain-Source Breakdown Voltage | BVDSS | VGS=0V , ID=250uA | 40 | - | - | V |
| Drain-Source Leakage Current | IDSS | VDS=32V , VGS=0V , TJ=25 | - | - | 1 | uA |
| Gate-Source Leakage Current | IGSS | VGS=20V , VDS=0V | - | - | 100 | nA |
| Gate Threshold Voltage | VGS(th) | VGS=VDS , ID =250uA | 1.0 | 1.5 | 2.5 | V |
| Static Drain-Source On-Resistance | RDS(ON) | VGS =10V, ID =8A | - | 6.3 | 8.5 | m |
| Static Drain-Source On-Resistance | RDS(ON) | VGS =4.5V, ID =4A | - | 9.5 | 12 | m |
| Dynamic Characteristics | ||||||
| Input Capacitance | Ciss | VDS=20V , VGS=0V , f=1MHz | - | 2450 | - | pF |
| Output Capacitance | Coss | - | 168 | - | pF | |
| Reverse Transfer Capacitance | Crss | - | 135 | - | pF | |
| Total Gate Charge | Qg | VDS=20V , VGS=10V , ID=20A | - | 45 | - | nC |
| Gate-Source Charge | Qgs | - | 11 | - | nC | |
| Gate-Drain Charge | Qg d | - | 11 | - | nC | |
| Switching Characteristics | ||||||
| Turn-On Delay Time | Td(on) | VDD=20V VGS=10V , RG=3, ID=20A | - | 11 | - | nS |
| Rise Time | Tr | - | 29 | - | nS | |
| Turn-Off Delay Time | Td(off) | - | 42 | - | nS | |
| Fall Time | Tf | - | 7 | - | nS | |
| Diode Characteristics | ||||||
| Diode Forward Voltage | VSD | VGS=0V , IS=1A , TJ=25 | - | - | 1.2 | V |
| Maximum Body-Diode Continuous Current | IS | - | - | 60 | A | |
| Reverse recover time | Trr | IS=20A, di/dt=100A/us, TJ=25 | - | 12 | - | nS |
| Reverse recovery charge | Qrr | - | 7 | - | nC | |
| Package Information (PDFN5X6-8L) | ||||||
| Symbol | Dimensions In Millimeters | Dimensions In Inches | Min. | Max. | Min. | Max. |
| A | 0.900 - 1.000 | 0.035 - 0.039 | ||||
| A3 | 0.254REF. | 0.010REF. | ||||
| D | 4.944 - 5.096 | 0.195 - 0.201 | ||||
| E | 5.974 - 6.126 | 0.235 - 0.241 | ||||
| D1 | 3.910 - 4.110 | 0.154 - 0.162 | ||||
| E1 | 3.375 - 3.575 | 0.133 - 0.141 | ||||
| D2 | 4.824 - 4.976 | 0.190 - 0.196 | ||||
| E2 | 5.674 - 5.826 | 0.223 - 0.229 | ||||
| k | 1.190 - 1.390 | 0.047 - 0.055 | ||||
| b | 0.350 - 0.450 | 0.014 - 0.018 | ||||
| e | 1.270TYP. | 0.050TYP. | ||||
| L | 0.559 - 0.711 | 0.022 - 0.028 | ||||
| L1 | 0.424 - 0.576 | 0.017 - 0.023 | ||||
| H | 0.574 - 0.726 | 0.023 - 0.029 | ||||
| 10 - 12 | 10 - 12 | |||||
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