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China Power MOSFET Siliup SP010N13GTH 100V N Channel Featuring Low RDSon and High Avalanche Energy Testing for sale

Power MOSFET Siliup SP010N13GTH 100V N Channel Featuring Low RDSon and High Avalanche Energy Testing

Price Negotiable
Price: Negotiable
MOQ: Negotiable
Delivery Time: Negotiable
Product Description

Product Overview

The SP010N13GTH is a 100V N-Channel Power MOSFET from Siliup Semiconductor Technology Co. Ltd. Engineered with advanced Split Gate Trench Technology, it offers fast switching, low gate charge, and low RDS(on). This MOSFET is ideal for power switching applications, battery management systems, and uninterruptible power supplies, benefiting from 100% single pulse avalanche energy testing for enhanced reliability.

Product Attributes

  • Brand: Siliup Semiconductor Technology Co. Ltd.
  • Product Code: SP010N13GTH
  • Technology: Advanced Split Gate Trench Technology
  • Channel Type: N-Channel
  • Package: TO-252

Technical Specifications

Parameter Symbol Test Condition Min Typ Max Unit
Product Summary
Drain-Source Voltage V(BR)DSS 100 V
Drain-Source ON Resistance RDS(on) @10V 13 m
Drain-Source ON Resistance RDS(on) @4.5V 16 m
Continuous Drain Current ID 45 A
Absolute Maximum Ratings
Drain-Source Voltage VDS (Ta=25 unless otherwise noted) 100 V
Gate-Source Voltage VGS (Ta=25 unless otherwise noted) 20 V
Continuous Drain Current ID (Tc=25) 45 A
Continuous Drain Current ID (Tc=100) 30 A
Pulsed Drain Current IDM 180 A
Single Pulse Avalanche Energy EAS 1 144 mJ
Power Dissipation PD (Tc=25) 75 W
Thermal Resistance Junction-to-Case RJC 1.67 /W
Storage Temperature Range TSTG -55 150
Operating Junction Temperature Range TJ -55 150
Electrical Characteristics
Drain-Source Breakdown Voltage BVDSS ID = 250A, VGS = 0V 100 - - V
Drain Cut-Off Current IDSS VDS = 80V, VGS = 0V - - 1 uA
Gate Leakage Current IGSS VGS = 20V, VDS = 0V - - 0.1 nA
Gate Threshold Voltage VGS(th) VDS = VGS, ID = 250A 1.0 1.8 2.5 V
Drain-Source ON Resistance RDS(ON) VGS = 10V, ID = 20A - 13 17 m
Drain-Source ON Resistance RDS(ON) VGS = 4.5V, ID = 10A - 16 21 m
Input Capacitance Ciss VDS =50V, VGS = 0V, f = 1.0MHz - 1225 - pF
Output Capacitance Coss - 379 - pF
Reverse Transfer Capacitance Crss - 17 - pF
Total Gate Charge Qg VDS=50V , VGS=10V , ID=20A - 14 - nC
Gate-Source Charge Qgs - 5 - nC
Gate-Drain Charge Qgd - 2.7 - nC
Turn-On Delay Time td(on) VGS = 10V, VDS =50V, ID=20A RG = 2.2 - 38 - nS
Rise Time tr - 12 - nS
Turn-Off Delay Time td(off) - 51 - nS
Fall Time tf - 17 - nS
Source-Drain Diode Forward Voltage VSD VGS=0V , IS=1A , TJ=25 - - 1.2 V
Maximum Body-Diode Continuous Current IS - - 45 A
Reverse Recovery Time trr IS=20A, di/dt=100A/us, TJ=25 - 40 - nS
Reverse Recovery Charge Qrr - 42 - nC
Package Information Symbol Dimensions In Millimeters Dimensions In Inches
Min. Max. Min. Max.
A 2.200 2.400 0.087 0.094
A1 0.000 0.127 0.000 0.005
b 0.660 0.860 0.026 0.034
c 0.460 0.580 0.018 0.023
D 6.500 6.700 0.256 0.264
D1 5.100 5.460 0.201 0.215
D2 4.830 REF. 0.190 REF.
E 6.000 6.200 0.236 0.244
e 2.186 2.386 0.086 0.094
L 9.800 10.400 0.386 0.409
L1 2.900 REF. 0.114 REF.
L2 1.400 1.700 0.055 0.067
L3 1.600 REF. 0.063 REF.
L4 0.600 1.000 0.024 0.039
1.100 1.300 0.043 0.051
0 8 0 8
h 0.000 0.300 0.000 0.012
V 5.350 REF. 0.211 REF.

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Company Hefei Purple Horn E-Commerce Co., Ltd.
Location Room 1306B, Building A, Xindi Center, Qimen Road, Hefei City, Anhui Province
Contact Person Sellina

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