Power MOSFET SP40N01LGTO 40V N Channel Featuring Low RDSon and Fast Switching for Power Applications
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Product Description
Product Overview
The SP40N01LGTO is a 40V N-Channel Power MOSFET from Siliup Semiconductor Technology Co. Ltd., designed for high-performance applications. It features fast switching, low gate charge, and low RDS(on) thanks to its advanced split gate trench technology. This MOSFET is 100% tested for single pulse avalanche energy, making it suitable for PWM applications, hard switched, and high-frequency circuits, as well as power management systems.
Product Attributes
- Brand: Siliup Semiconductor Technology Co. Ltd.
- Device Code: SP40N01LGTO
- Technology: Advanced Split Gate Trench Technology
- Package: TOLL
Technical Specifications
| Parameter | Symbol | Conditions | Min. | Typ. | Max. | Units |
|---|---|---|---|---|---|---|
| Product Summary | ||||||
| V(BR)DSS | 40 | V | ||||
| RDS(on)TYP | @10V | 1.2 | m | |||
| RDS(on)TYP | @4.5V | 1.6 | m | |||
| ID | 235 | A | ||||
| Absolute Maximum Ratings | ||||||
| Drain-Source Voltage | VDS | 40 | V | |||
| Gate-Source Voltage | VGS | 20 | V | |||
| Continuous Drain Current (Tc=25) | ID | 235 | A | |||
| Continuous Drain Current (Tc=100) | ID | 150 | A | |||
| Pulsed Drain Current | IDM | 940 | A | |||
| Single Pulse Avalanche Energy | EAS | 900 | mJ | |||
| Power Dissipation (Tc=25) | PD | 116 | W | |||
| Thermal Resistance Junction-to-Case | RJC | 1.08 | /W | |||
| Storage Temperature Range | TSTG | -55 | 150 | |||
| Operating Junction Temperature Range | TJ | -55 | 150 | |||
| Electrical Characteristics | ||||||
| Drain-Source Breakdown Voltage | BVDSS | VGS=0V , ID=250uA | 40 | 45 | - | V |
| Drain-Source Leakage Current | IDSS | VDS=32V , VGS=0V , TJ=25 | - | - | 1 | uA |
| Gate-Source Leakage Current | IGSS | VGS=20V , VDS=0V | - | - | 100 | nA |
| Gate Threshold Voltage | VGS(th) | VGS=VDS , ID =250uA | 1 | 1.7 | 2.5 | V |
| Static Drain-Source On-Resistance | RDS(ON) | VGS=10V , ID=20A | - | 1.2 | 1.5 | m |
| Static Drain-Source On-Resistance | RDS(ON) | VGS=4.5V , ID=20A | - | 1.6 | 2.1 | m |
| Dynamic Characteristics | ||||||
| Input Capacitance | Ciss | VDS=20V , VGS=0V , f=1MHz | - | 5025 | - | pF |
| Output Capacitance | Coss | - | 1683 | - | pF | |
| Reverse Transfer Capacitance | Crss | - | 63 | - | pF | |
| Total Gate Charge | Qg | VDS=20V , VGS=10V , ID=85A | - | 78 | - | nC |
| Gate-Source Charge | Qgs | - | 27 | - | ||
| Gate-Drain Charge | Qg | - | 16 | - | ||
| Switching Characteristics | ||||||
| Turn-On Delay Time | Td(on) | VDD=20V , VGS=10V , RG=1.6, ID=85A | - | 12.3 | - | nS |
| Rise Time | Tr | - | 8 | - | ||
| Turn-Off Delay Time | Td(off) | - | 47.5 | - | nS | |
| Fall Time | Tf | - | 8.8 | - | ||
| Diode Characteristics | ||||||
| Diode Forward Voltage | VSD | VGS=0V , IS=1A , TJ=25 | - | - | 1.2 | V |
| Maximum Body-Diode Continuous Current | IS | - | - | 235 | A | |
| Reverse Recovery Time | Trr | IS=50A , di/dt=100A/us , TJ=25 | - | 64 | - | nS |
| Reverse Recovery Charge | Qrr | - | 86.8 | - | nC | |
| Package Information (TOLL) | ||||||
| Symbol | Dimensions (mm) | Min. | Nom. | Max. | ||
| A | 2.20 | 2.30 | 2.40 | |||
| b | 0.65 | 0.75 | 0.85 | |||
| C | 0.508 | REF | ||||
| D | 10.25 | 10.40 | 10.55 | |||
| D1 | 2.85 | 3.00 | 3.15 | |||
| E | 9.75 | 9.90 | 10.05 | |||
| E1 | 9.65 | 9.80 | 9.95 | |||
| E2 | 8.95 | 9.10 | 9.25 | |||
| E3 | 7.25 | 7.40 | 7.55 | |||
| e | 1.20 | BSC | ||||
| F | 1.05 | 1.20 | 1.35 | |||
| H | 11.55 | 11.70 | 11.85 | |||
| H1 | 6.03 | 6.18 | 6.33 | |||
| H2 | 6.85 | 7.00 | 7.15 | |||
| H3 | 3.00 | BSC | ||||
| L | 1.55 | 1.70 | 1.85 | |||
| L1 | 0.55 | 0.7 | 0.85 | |||
| L2 | 0.45 | 0.6 | 0.75 | |||
| M | 0.08 | REF. | ||||
| 8 | 10 | 12 | ||||
| K | 4.25 | 4.40 | 4.55 | |||
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