Compact SOT 23 Package Siliup BSS138 N Channel MOSFET with 60V Voltage and 2KV ESD Protection Rating
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MOQ:
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Delivery Time:
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Product Description
Product Overview
The Siliup Semiconductor BSS138 is a 60V N-Channel MOSFET designed for high power and current handling capabilities. It features an ESD protected 2KV rating and is supplied in a surface mount SOT-23 package. This MOSFET is ideal for applications such as battery switches and DC/DC converters, offering reliable performance with key specifications including a typical RDS(on) of 2 at 10V and a continuous drain current (ID) of 220mA.
Product Attributes
- Brand: Siliup Semiconductor Technology Co. Ltd.
- Product Code: BSS138
- Channel Type: N-Channel
- Package: SOT-23
- ESD Protection: 2KV
Technical Specifications
| Parameter | Symbol | Conditions | Min. | Typ. | Max. | Unit | |
|---|---|---|---|---|---|---|---|
| Product Summary | |||||||
| Drain-Source Voltage | V(BR)DSS | 60 | V | ||||
| Static Drain-Source On-Resistance | RDS(on) | VGS=10V | 2 | 5 | |||
| Static Drain-Source On-Resistance | RDS(on) | VGS=4.5V | 2.5 | 8 | |||
| Continuous Drain Current | ID | 220 | mA | ||||
| Absolute Maximum Ratings (Ta=25, unless otherwise noted) | |||||||
| Drain-Source Voltage | VDSS | 60 | V | ||||
| Gate-Source Voltage | VGSS | 20 | V | ||||
| Continuous Drain Current | ID | 220 | mA | ||||
| Pulse Drain Current | IDM | Tested | 880 | mA | |||
| Power Dissipation | PD | 350 | mW | ||||
| Thermal Resistance Junction-to-Ambient | RJA | 357 | C/W | ||||
| Storage Temperature Range | TSTG | -55 | 150 | C | |||
| Operating Junction Temperature Range | TJ | -55 | 150 | C | |||
| Electrical Characteristics (Ta=25, unless otherwise noted) | |||||||
| Drain-Source Breakdown Voltage | BVDSS | VGS=0V , ID=250A | 60 | - | - | V | |
| Drain-Source Leakage Current | IDSS | VDS=48V , VGS=0V | - | - | 1 | uA | |
| Gate-Source Leakage Current | IGSS | VGS=20V , VDS=0V | - | - | 10 | uA | |
| Gate Threshold Voltage | VGS(th) | VDS=VGS , ID=250A | 0.7 | 1 | 1.45 | V | |
| Static Drain-Source On-Resistance | RDS(ON) | VGS =10V, ID =200mA | - | 2 | 5 | ||
| Static Drain-Source On-Resistance | RDS(ON) | VGS =4.5V, ID =200mA | - | 2.5 | 8 | ||
| Input Capacitance | Ciss | VDS=25V , VGS=0V , f=1MHz | - | 12 | - | pF | |
| Output Capacitance | Coss | - | 6 | - | pF | ||
| Reverse Transfer Capacitance | Crss | - | 2.5 | - | pF | ||
| Total Gate Charge | Qg | VDS=10V , VGS=15V , ID=1A | - | 1.34 | - | nC | |
| Gate-Source Charge | Qgs | - | 0.29 | - | |||
| Gate-Drain Charge | Qgd | - | 0.2 | - | |||
| Turn-On Delay Time | td(on) | VDD=15V VGS=10V , RG=2.3 , ID=1A | - | 5 | - | nS | |
| Turn-On Rise Time | tr | - | 18 | - | nS | ||
| Turn-Off Delay Time | td(off) | - | 8 | - | nS | ||
| Turn-Off Fall Time | tf | - | 14 | - | nS | ||
| Diode Forward Voltage | VSD | VGS=0V , IS=1A , TJ=25 | - | - | 1.2 | V | |
| SOT-23 Package Information | |||||||
| Dimension | Symbol | Millimeters (Min) | Millimeters (Max) | ||||
| A | 0.90 | 1.15 | |||||
| A1 | 0.00 | 0.10 | |||||
| A2 | 0.90 | 1.05 | |||||
| b | 0.30 | 0.50 | |||||
| c | 0.08 | 0.15 | |||||
| D | 2.80 | 3.00 | |||||
| E | 1.20 | 1.40 | |||||
| E1 | 2.25 | 2.55 | |||||
| e | 0.95 REF. | ||||||
| e1 | 1.80 | 2.00 | |||||
| L | 0.55 REF. | ||||||
| L1 | 0.30 | 0.50 | |||||
| 0 | 8 | ||||||
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