power switching device Siliup SP40N02HTH 40V N Channel MOSFET with excellent avalanche energy rating
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Product Description
Product Overview
The SP40N02HTH is a 40V N-Channel MOSFET from Siliup Semiconductor Technology Co. Ltd. Designed for efficient power management, it features fast switching speeds, low Gate Charge and RDS(on), and 100% single pulse avalanche energy testing. This MOSFET is ideal for applications such as DC-DC converters and load switching, offering reliable performance in demanding environments.
Product Attributes
- Brand: Siliup Semiconductor Technology Co. Ltd.
- Device Code: 40N02H
- Package: TO-252
Technical Specifications
| Parameter | Symbol | Conditions | Min. | Typ. | Max. | Unit |
|---|---|---|---|---|---|---|
| Product Summary | ||||||
| Drain-Source Voltage | V(BR)DSS | 40 | V | |||
| Static Drain-Source On-Resistance | RDS(on) | 10V | 2.5 | m | ||
| Continuous Drain Current | ID | 130 | A | |||
| Absolute Maximum Ratings | ||||||
| Drain-Source Voltage | VDS | (Ta=25) | 40 | V | ||
| Gate-Source Voltage | VGS | (Ta=25) | 20 | V | ||
| Continuous Drain Current | ID | (TC=25) | 130 | A | ||
| Continuous Drain Current | ID | (TC=100) | 87 | A | ||
| Pulsed Drain Current | IDM | 520 | A | |||
| Single Pulse Avalanche Energy | EAS | 1225 | mJ | |||
| Power Dissipation | PD | (TC=25) | 125 | W | ||
| Thermal Resistance Junction-to-Case | RJC | 1.0 | /W | |||
| Storage Temperature Range | TSTG | -55 | 150 | |||
| Operating Junction Temperature Range | TJ | -55 | 150 | |||
| Electrical Characteristics | ||||||
| Drain-Source Breakdown Voltage | BVDSS | VGS=0V , ID=250uA | 40 | - | - | V |
| Drain-Source Leakage Current | IDSS | VDS=32V , VGS=0V , TJ=25 | - | - | 1 | uA |
| Gate-Source Leakage Current | IGSS | VGS=20V , VDS=0V | - | - | 100 | nA |
| Gate Threshold Voltage | VGS(th) | VGS=VDS , ID =250uA | 2.0 | 2.6 | 3.5 | V |
| Static Drain-Source On-Resistance | RDS(ON) | VGS=10V , ID=50A | - | 2.5 | 3.2 | m |
| Input Capacitance | Ciss | VDS=25V , VGS=0V , f=1MHz | - | 4711 | - | pF |
| Output Capacitance | Coss | VDS=25V , VGS=0V , f=1MHz | - | 869 | - | pF |
| Reverse Transfer Capacitance | Crss | VDS=25V , VGS=0V , f=1MHz | - | 367 | - | pF |
| Total Gate Charge | Qg | VDS=32V , VGS=10V , ID=20A | - | 175 | - | nC |
| Gate-Source Charge | Qgs | VDS=32V , VGS=10V , ID=20A | - | 47 | - | nC |
| Gate-Drain Charge | Qgd | VDS=32V , VGS=10V , ID=20A | - | 32 | - | nC |
| Turn-On Delay Time | td(on) | VDD=15V, VGS=4.5V , RG=6, ID=3A | - | 48 | - | nS |
| Rise Time | tr | VDD=15V, VGS=4.5V , RG=6, ID=3A | - | 83 | - | nS |
| Turn-Off Delay Time | td(off) | VDD=15V, VGS=4.5V , RG=6, ID=3A | - | 175 | - | nS |
| Fall Time | tf | VDD=15V, VGS=4.5V , RG=6, ID=3A | - | 61 | - | nS |
| Diode Forward Voltage | VSD | VGS=0V , IS=1A , TJ=25 | - | - | 1.2 | V |
| Maximum Body-Diode Continuous Current | IS | - | - | 130 | A | |
| Reverse Recovery Time | trr | IS=20A, di/dt=100A/us, TJ=25 | - | 23 | - | nS |
| Reverse Recovery Charge | Qrr | IS=20A, di/dt=100A/us, TJ=25 | - | 8 | - | nC |
| Order Information | ||||||
| Device | Package | Unit/Tape | ||||
| SP40N02HTH | TO-252 | 2500 | ||||
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