Dual N Channel MOSFET Siliup SP30N08DP8 30V 10A Power Switching Device with Low Gate Charge
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Product Description
Product Overview
The SP30N08DP8 is a 30V Dual N-Channel MOSFET from Siliup Semiconductor Technology Co. Ltd. Engineered for power switching applications, it features fast switching, low gate charge, and low Rdson. Its 100% single pulse avalanche energy test ensures reliability in demanding environments, making it suitable for hard-switched and high-frequency circuits, including Uninterruptible Power Supplies (UPS).
Product Attributes
- Brand: Siliup Semiconductor Technology Co. Ltd.
- Product Type: Dual N-Channel MOSFET
- Device Code: 30N08D
Technical Specifications
| Parameter | Symbol | Conditions | Min. | Typ. | Max. | Units |
| Product Summary | ||||||
| V(BR)DSS | 30 | V | ||||
| RDS(on)TYP | @10V | 8.5 | m | |||
| RDS(on)TYP | @4.5V | 13 | m | |||
| ID | 10 | A | ||||
| Absolute Maximum Ratings | ||||||
| Drain-Source Voltage | VDS | (Ta=25,unless otherwise noted) | 30 | V | ||
| Gate-Source Voltage | VGS | (Ta=25,unless otherwise noted) | 20 | V | ||
| Continuous Drain Current | ID | (Ta=25,unless otherwise noted) | 10 | A | ||
| Pulsed Drain Current | IDM | (Ta=25,unless otherwise noted) | 40 | A | ||
| Single Pulse Avalanche Energy | EAS | (Ta=25,unless otherwise noted) | 36 | mJ | ||
| Power Dissipation | PD | (Ta=25,unless otherwise noted) | 2 | W | ||
| Junction-to-Ambient Thermal Resistance | RJA | (Ta=25,unless otherwise noted) | 62.5 | /W | ||
| Storage Temperature Range | TSTG | (Ta=25,unless otherwise noted) | -55 | 150 | ||
| Operating Junction Temperature Range | TJ | (Ta=25,unless otherwise noted) | -55 | 150 | ||
| Electrical Characteristics | ||||||
| Drain-Source Breakdown Voltage | BVDSS | VGS=0V , ID=250uA | 30 | - | - | V |
| Drain-Source Leakage Current | IDSS | VDS=24V , VGS=0V | - | - | 1 | uA |
| Gate-Source Leakage Current | IGSS | VGS=20V , VDS=0V | - | - | 100 | nA |
| Gate Threshold Voltage | VGS(th) | VGS=VDS , ID =250uA | 1 | 1.5 | 2.5 | V |
| Static Drain-Source On-Resistance | RDS(ON) | VGS=10V , ID=8A | - | 8.5 | 12 | m |
| Static Drain-Source On-Resistance | RDS(ON) | VGS=4.5V , ID=6A | - | 13 | 17 | m |
| Dynamic Characteristics | ||||||
| Input Capacitance | Ciss | VDS=15V , VGS=0V , f=1MHz | - | 1160 | - | pF |
| Output Capacitance | Coss | VDS=15V , VGS=0V , f=1MHz | - | 165 | - | pF |
| Reverse Transfer Capacitance | Crss | VDS=15V , VGS=0V , f=1MHz | - | 130 | - | pF |
| Total Gate Charge | Qg | VDS=15V , VGS=10V , ID=10A | - | 23 | - | nC |
| Gate-Source Charge | Qgs | VDS=15V , VGS=10V , ID=10A | - | 5 | - | nC |
| Gate-Drain Charge | Qg | VDS=15V , VGS=10V , ID=10A | - | 6 | - | nC |
| Switching Characteristics | ||||||
| Turn-On Delay Time | Td(on) | VDD=15V ,VGS=10V , RG=3, ID=1A | - | 6 | - | nS |
| Rise Time | Tr | VDD=15V ,VGS=10V , RG=3, ID=1A | - | 16 | - | nS |
| Turn-Off Delay Time | Td(off) | VDD=15V ,VGS=10V , RG=3, ID=1A | - | 26 | - | nS |
| Fall Time | Tf | VDD=15V ,VGS=10V , RG=3, ID=1A | - | 6 | - | nS |
| Diode Characteristics | ||||||
| Diode Forward Voltage | VSD | VGS=0V , IS=1A | - | - | 1.2 | V |
| Maximum Body-Diode Continuous Current | IS | - | - | 10 | A | |
| Reverse Recovery Time | Trr | IS=10A, di/dt=100A/us, TJ=25 | - | 8 | - | nS |
| Reverse Recovery Charge | Qrr | IS=10A, di/dt=100A/us, TJ=25 | - | 3 | - | nC |
| Package Information (SOP-8L) | ||||||
| Symbol | Dimensions (mm) | Min. | Max. | |||
| A | 1.35 | 1.75 | ||||
| A1 | 0.10 | 0.25 | ||||
| A2 | 1.35 | 1.55 | ||||
| b | 0.33 | 0.51 | ||||
| c | 0.17 | 0.25 | ||||
| D | 4.80 | 5.00 | ||||
| e | 1.27 REF. | |||||
| E | 5.80 | 6.20 | ||||
| E1 | 3.80 | 4.00 | ||||
| L | 0.40 | 1.27 | ||||
| 0 | 8 | |||||
| Order Information | ||||||
| Device | Package | Unit/Tape | ||||
| SP30N08DP8 | SOP-8L | 4000 | ||||
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