100V N Channel MOSFET Siliup SP010N15GP8 Featuring Split Gate Trench Technology for Power Switching
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Product Description
Product Overview
The SP010N15GP8 is a 100V N-Channel Power MOSFET from Siliup Semiconductor Technology Co. Ltd. It features fast switching, low gate charge, and low RDS(on), enabled by advanced split gate trench technology. This MOSFET is 100% tested for single pulse avalanche energy and is suitable for power switching applications, battery management, and uninterruptible power supplies.
Product Attributes
- Brand: Siliup Semiconductor Technology Co. Ltd.
- Product Line: Power MOSFET
- Channel Type: N-Channel
- Technology: Advanced Split Gate Trench Technology
- Package: SOP-8L
- Device Code: 010N15G
Technical Specifications
| Parameter | Symbol | Test Condition | Min | Typ | Max | Unit |
|---|---|---|---|---|---|---|
| Product Summary | ||||||
| V(BR)DSS | - | - | - | - | 100 | V |
| RDS(on) TYP | - | @10V | - | 15 | - | m |
| RDS(on) TYP | - | @4.5V | - | 18 | - | m |
| ID | - | - | - | - | 8 | A |
| Absolute Maximum Ratings | ||||||
| Drain-Source Voltage | VDS | (Ta=25 unless otherwise noted) | - | - | 100 | V |
| Gate-Source Voltage | VGS | - | - | 20 | - | V |
| Continuous Drain Current | ID | (Ta=25 unless otherwise noted) | - | - | 8 | A |
| Continuous Drain Current | ID | (Ta=100C) | - | - | 5.5 | A |
| Pulse Drain Current | IDM | Tested | - | - | 32 | A |
| Single Pulse Avalanche Energy1 | EAS | - | - | - | 72 | mJ |
| Power Dissipation | PD | - | - | - | 3 | W |
| Thermal Resistance Junction-to-Ambient | RJA | - | - | - | 41.67 | /W |
| Storage Temperature Range | TSTG | - | -55 | - | 150 | |
| Operating Junction Temperature Range | TJ | - | -55 | - | 150 | |
| Electrical Characteristics | ||||||
| Drain-Source Breakdown Voltage | BVDSS | ID = 250A, VGS = 0V | 100 | - | - | V |
| Drain Cut-Off Current | IDSS | VDS = 80V, VGS = 0V | - | - | 1 | uA |
| Gate Leakage Current | IGSS | VGS = 20V, VDS = 0V | - | - | 0.1 | nA |
| Gate Threshold Voltage | VGS(th) | VDS = VGS, ID = 250A | 1.0 | 1.8 | 2.5 | V |
| Drain-Source ON Resistance | RDS(ON) | VGS = 10V, ID = 8A | - | 15 | 19 | m |
| Drain-Source ON Resistance | RDS(ON) | VGS = 4.5V, ID = 6A | - | 18 | 24 | m |
| Dynamic Characteristics | ||||||
| Input Capacitance | Ciss | VDS =50V, VGS = 0V, f = 1.0MHz | - | 1069 | - | pF |
| Output Capacitance | Coss | - | - | 356 | - | pF |
| Reverse Transfer Capacitance | Crss | - | - | 17 | - | pF |
| Total Gate Charge | Qg | VDS=50V , VGS=10V , ID=8A | - | 14 | - | nC |
| Gate-Source Charge | Qgs | - | - | 5 | - | nC |
| Gate-Drain Charge | Qg | - | - | 2.7 | - | nC |
| Switching Characteristics | ||||||
| Turn-On Delay Time | td(on) | VGS = 10V, VDS =50V, ID=8A, RG = 2.2 | - | 38 | - | nS |
| Rise Time | tr | - | - | 12 | - | nS |
| Turn-Off Delay Time | td(off) | - | - | 51 | - | nS |
| Fall Time | tf | - | - | 17 | - | nS |
| Drain-Source Body Diode Characteristics | ||||||
| Source-Drain Diode Forward Voltage | VSD | VGS=0V , IS=1A , TJ=25 | - | - | 1.2 | V |
| Maximum Body-Diode Continuous Current | IS | - | - | - | 8 | A |
| Reverse Recovery Time | Trr | IS=8A, di/dt=100A/us, TJ=25 | - | 40 | - | nS |
| Reverse Recovery Charge | Qrr | - | - | 42 | - | nC |
| Package Information | ||||||
| Package Type | - | - | - | - | SOP-8L | - |
| Order Information | - | - | - | - | SP010N15GP8 | - |
| Unit/Tape | - | - | - | - | 4000 | - |
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