High Reliability Siliup SP010P16GHTD 100V P Channel Power MOSFET with Single Pulse Avalanche Testing

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Product Description

Product Overview

The SP010P16GHTD is a 100V P-Channel Power MOSFET from Siliup Semiconductor Technology Co. Ltd. Engineered with advanced Split Gate Trench Technology, it offers fast switching speeds, low gate charge, and low RDS(on). This MOSFET is ideal for PWM applications, hard-switched, and high-frequency circuits, as well as power management solutions. It features 100% single pulse avalanche energy testing for enhanced reliability.

Product Attributes

Brand: Siliup Semiconductor Technology Co. Ltd.
Device Code: 010P16GH
Package: TO-263

Technical Specifications

Parameter	Symbol	Conditions	Min.	Typ.	Max.	Unit
Product Summary
Breakdown Voltage (Drain-Source)	V(BR)DSS		-100			V
On-Resistance (Typical)	RDS(on)TYP	@-10V		16		m
Continuous Drain Current	ID		-60			A
Absolute Maximum Ratings
Drain-Source Voltage	VDS				-100	V
Gate-Source Voltage	VGS				20	V
Continuous Drain Current (Tc=25)	ID				-60	A
Continuous Drain Current (Tc=100)	ID				-40	A
Pulsed Drain Current	IDM				-240	A
Single Pulse Avalanche Energy	EAS			625		mJ
Power Dissipation (Tc=25)	PD				180	W
Thermal Resistance Junction-to-Case	RJC			0.69		/W
Storage Temperature Range	TSTG		-55		150
Operating Junction Temperature Range	TJ		-55		150
Electrical Characteristics
Drain-Source Breakdown Voltage	BVDSS	VGS=0V , ID= -250uA	-100			V
Drain-Source Leakage Current	IDSS	VDS=-80V , VGS=0V , TJ=25			-1	uA
Gate-Source Leakage Current	IGSS	VGS=20V , VDS=0V			100	nA
Gate Threshold Voltage	VGS(th)	VGS=VDS , ID = -250uA	-2	-3	-4	V
Static Drain-Source On-Resistance	RDS(ON)	VGS=-10V , ID= -20A		16	20	m
Dynamic Characteristics
Input Capacitance	Ciss	VDS=-50V , VGS=0V , f=1MHz		6825		pF
Output Capacitance	Coss			752		pF
Reverse Transfer Capacitance	Crss			296		pF
Total Gate Charge	Qg	VDS=-50V , VGS=10V , ID=-20A		98		nC
Gate-Source Charge	Qgs			26		nC
Gate-Drain Charge	Qgd			13		nC
Switching Characteristics
Turn-On Delay Time	Td(on)	VDD=-50V , VGS=10V , RG=1.6,ID=-20A		16		nS
Rise Time	Tr			58		nS
Turn-Off Delay Time	Td(off)			145		nS
Fall Time	Tf			56		nS
Diode Characteristics
Diode Forward Voltage	VSD	VGS=0V , IS=-1A , TJ=25			-1.2	V
Maximum Body-Diode Continuous Current	IS				-60	A
Reverse Recovery Time	Trr	IS=-20A, di/dt=100A/us, TJ=25		96		nS
Reverse Recovery Charge	Qrr			205		nC
Package Information (TO-263)
Symbol	Dimensions In Millimeters	Dimensions In Inches	Min.	Max.	Min.	Max.
A	4.470 - 4.670	0.176 - 0.184
A1	0.000 - 0.150	0.000 - 0.006
B	1.120 - 1.420	0.044 - 0.056
b	0.710 - 0.910	0.028 - 0.036
b1	1.170 - 1.370	0.046 - 0.054
c	0.310 - 0.530	0.012 - 0.021
c1	1.170 - 1.370	0.046 - 0.054
D	10.010 - 10.310	0.394 - 0.406
E	8.500 - 8.900	0.335 - 0.350
e	2.540 TYP.	0.100 TYP.
e1	4.980 - 5.180	0.196 - 0.204
L	14.940 - 15.500	0.588 - 0.610
L1	4.950 - 5.450	0.195 - 0.215
L2	2.340 - 2.740	0.092 - 0.108
L3	1.300 - 1.700	0.051 - 0.067
	0 - 8	0 - 8
V	5.600 REF.	0.220 REF.