100V N Channel Power MOSFET SP010N02BGHTQ with Low Gate Charge and Fast Switching in TO2203L Package
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Product Description
Product Overview
The SP010N02BGHTQ is a 100V N-Channel Power MOSFET from Siliup Semiconductor Technology Co. Ltd. Designed with advanced split gate trench technology, it offers fast switching, low gate charge, and low RDS(on). This MOSFET is ideal for power switching applications, DC-DC converters, and power management systems. It is packaged in a TO-220-3L configuration.
Product Attributes
- Brand: Siliup Semiconductor Technology Co. Ltd.
- Product Code: SP010N02BGHTQ
- Technology: Advanced Split Gate Trench Technology
- Channel Type: N-Channel
- Package: TO-220-3L (Pinout: 1:G, 2:D, 3:S)
Technical Specifications
| Parameter | Symbol | Test Condition | Min | Typ | Max | Unit |
|---|---|---|---|---|---|---|
| Product Summary | ||||||
| Drain-Source Voltage | V(BR)DSS | 100 | V | |||
| RDS(on) Typ | @10V | 2.7 | m | |||
| Continuous Drain Current | ID | 220 | A | |||
| Absolute Maximum Ratings | ||||||
| Drain-Source Voltage | VDS | 100 | V | |||
| Gate-Source Voltage | VGS | 20 | V | |||
| Continuous Drain Current (Tc=25) | ID | 220 | A | |||
| Continuous Drain Current (Tc=100) | ID | 150 | A | |||
| Pulsed Drain Current | IDM | 880 | A | |||
| Single Pulse Avalanche Energy | EAS | 1458 | mJ | |||
| Power Dissipation (Tc=25) | PD | 230 | W | |||
| Thermal Resistance Junction-to-Case | RJC | 0.54 | /W | |||
| Storage Temperature Range | TSTG | -55 | 150 | |||
| Operating Junction Temperature Range | TJ | -55 | 150 | |||
| Electrical Characteristics | ||||||
| Drain-Source Breakdown Voltage | BVDSS | VGS=0V, ID=250uA | 100 | - | - | V |
| Drain Cut-Off Current | IDSS | VDS=80V, VGS=0V, TJ=25 | - | - | 1 | A |
| Gate Leakage Current | IGSS | VGS=20V, VDS=0V | - | - | 100 | nA |
| Gate Threshold Voltage | VGS(th) | VGS=VDS, ID=250uA | 2.7 | 3.2 | 4.3 | V |
| Drain-Source ON Resistance | RDS(ON) | VGS=10V, ID=20A | - | 2.7 | 3.5 | m |
| Dynamic Characteristics | ||||||
| Input Capacitance | Ciss | VDS=50V, VGS=0V, f=1MHz | - | 10256 | - | pF |
| Output Capacitance | Coss | - | 1876 | - | ||
| Reverse Transfer Capacitance | Crss | - | 35 | - | ||
| Total Gate Charge | Qg | VDS=50V, VGS=10V, ID=125A | - | 158 | - | nC |
| Gate-Source Charge | Qgs | - | 51 | - | ||
| Gate-Drain Charge | Qgd | - | 27 | - | ||
| Switching Characteristics | ||||||
| Turn-On Delay Time | td(on) | VDD=50V, VGS=10V, RG=1.6, ID=125A | - | 35 | - | nS |
| Rise Time | tr | - | 68 | - | ||
| Turn-Off Delay Time | td(off) | - | 150 | - | ||
| Fall Time | tf | - | 105 | - | ||
| Drain-Source Body Diode Characteristics | ||||||
| Source-Drain Diode Forward Voltage | VSD | IS = 1A, VGS = 0V | - | - | 1.2 | V |
| Maximum Body-Diode Continuous Current | IS | - | - | 220 | A | |
| Reverse Recovery Time | Trr | IS=50A, di/dt=100A/us, TJ=25 | - | 86 | - | nS |
| Reverse Recovery Charge | Qrr | - | 256 | - | nC | |
Note: The test condition for switching characteristics is VDD=50V, VGS=10V, L=0.5mH, RG=25.
Package Information (TO-220-3L)
| Symbol | Dimensions In Millimeters | Dimensions In Inches | ||
|---|---|---|---|---|
| Min. | Max. | Min. | Max. | |
| A | 4.400 | 4.600 | 0.173 | 0.181 |
| A1 | 2.250 | 2.550 | 0.089 | 0.100 |
| b | 0.710 | 0.910 | 0.028 | 0.036 |
| b1 | 1.170 | 1.370 | 0.046 | 0.054 |
| c | 0.330 | 0.650 | 0.013 | 0.026 |
| c1 | 1.200 | 1.400 | 0.047 | 0.055 |
| D | 9.910 | 10.250 | 0.390 | 0.404 |
| E | 8.950 | 9.750 | 0.352 | 0.384 |
| E1 | 12.650 | 13.050 | 0.498 | 0.514 |
| e | 2.540 TYP. | 0.100 TYP. | ||
| e1 | 4.980 | 5.180 | 0.196 | 0.204 |
| F | 2.650 | 2.950 | 0.104 | 0.116 |
| H | 7.900 | 8.100 | 0.311 | 0.319 |
| h | 0.000 | 0.300 | 0.000 | 0.012 |
| L | 12.900 | 13.400 | 0.508 | 0.528 |
| L1 | 2.850 | 3.250 | 0.112 | 0.128 |
| V | 6.900 REF. | 0.276 REF. | ||
| 3.400 | 3.800 | 0.134 | 0.150 |
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