Power Switching MOSFET Siliup SP30N04AP8 30 Volt N Channel Device with Low RDS on and Fast Switching
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Delivery Time:
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Product Description
Product Overview
The SP30N04AP8 is a 30V N-Channel MOSFET from Siliup Semiconductor Technology Co. Ltd. It features fast switching, low gate charge, and low RDS(on), making it suitable for power switching applications, hard switched and high frequency circuits, and uninterruptible power supplies. This device has undergone 100% single pulse avalanche energy testing.
Product Attributes
- Brand: Siliup Semiconductor Technology Co. Ltd.
- Device Code: 30N04A
- Package: SOP-8L
Technical Specifications
| Parameter | Symbol | Conditions | Min. | Typ. | Max. | Unit |
|---|---|---|---|---|---|---|
| Product Summary | ||||||
| V(BR)DSS | V(BR)DSS | 30 | V | |||
| RDS(on)TYP | RDS(on) | @10V | 3.8 | m | ||
| RDS(on)TYP | RDS(on) | @4.5V | 5.8 | m | ||
| ID | ID | 15 | A | |||
| Absolute Maximum Ratings | ||||||
| Drain-Source Voltage | VDS | (Ta=25,unless otherwise noted) | 30 | V | ||
| Gate-Source Voltage | VGS | (Ta=25,unless otherwise noted) | 20 | V | ||
| Continuous Drain Current | ID | (Ta=25,unless otherwise noted) | 15 | A | ||
| Pulsed Drain Current | IDM | (Ta=25,unless otherwise noted) | 60 | A | ||
| Single Pulse Avalanche Energy | EAS | (Ta=25,unless otherwise noted) | 64 | mJ | ||
| Power Dissipation | PD | (Ta=25,unless otherwise noted) | 3 | W | ||
| Thermal Resistance Junction-to-Ambient | RJA | (Ta=25,unless otherwise noted) | 41.7 | /W | ||
| Storage Temperature Range | TSTG | (Ta=25,unless otherwise noted) | -55 | 150 | ||
| Operating Junction Temperature Range | TJ | (Ta=25,unless otherwise noted) | -55 | 150 | ||
| Electrical Characteristics | ||||||
| Drain-Source Breakdown Voltage | BVDSS | VGS=0V , ID=250uA | 30 | - | - | V |
| Drain-Source Leakage Current | IDSS | VDS=24V , VGS=0V | - | - | 1 | uA |
| Gate-Source Leakage Current | IGSS | VGS=20V , VDS=0V | - | - | 100 | nA |
| Gate Threshold Voltage | VGS(th) | VGS=VDS , ID =250uA | 1.0 | 1.5 | 2.5 | V |
| Static Drain-Source On-Resistance | RDS(ON) | VGS=10V , ID=12A | - | 3.8 | 5.8 | m |
| Static Drain-Source On-Resistance | RDS(ON) | VGS=4.5V , ID=10A | - | 5.8 | 8.8 | m |
| Dynamic Characteristics | ||||||
| Input Capacitance | Ciss | VDS=15V , VGS=0V , f=1MHz | - | 3068 | - | pF |
| Output Capacitance | Coss | VDS=15V , VGS=0V , f=1MHz | - | 369 | - | pF |
| Reverse Transfer Capacitance | Crss | VDS=15V , VGS=0V , f=1MHz | - | 289 | - | pF |
| Total Gate Charge | Qg | VDS=15V , VGS=10V , ID=10A | - | 44 | - | nC |
| Gate-Source Charge | Qgs | VDS=15V , VGS=10V , ID=10A | - | 7 | - | nC |
| Gate-Drain Charge | Qg d | VDS=15V , VGS=10V , ID=10A | - | 8 | - | nC |
| Switching Characteristics | ||||||
| Turn-On Delay Time | Td(on) | VDD=15V VGS=10V , RG=3, ID=10A | - | 10 | - | nS |
| Rise Time | Tr | VDD=15V VGS=10V , RG=3, ID=10A | - | 29 | - | nS |
| Turn-Off Delay Time | Td(off) | VDD=15V VGS=10V , RG=3, ID=10A | - | 46 | - | nS |
| Fall Time | Tf | VDD=15V VGS=10V , RG=3, ID=10A | - | 17 | - | nS |
| Diode Characteristics | ||||||
| Diode Forward Voltage | VSD | VGS=0V , IS=1A | - | - | 1.2 | V |
| Maximum Body-Diode Continuous Current | IS | - | - | 15 | A | |
| Reverse Recovery Time | Trr | IS=10A, di/dt=100A/us, Tj=25 | - | 12 | - | nS |
| Reverse Recovery Charge | Qrr | IS=10A, di/dt=100A/us, Tj=25 | - | 2.6 | - | nC |
| Package Information (SOP-8L) | ||||||
| Symbol | Dimensions In Millimeters | Min. | Max. | |||
| A | 1.35 | 1.75 | ||||
| A1 | 0.10 | 0.25 | ||||
| A2 | 1.35 | 1.55 | ||||
| b | 0.33 | 0.51 | ||||
| c | 0.17 | 0.25 | ||||
| D | 4.80 | 5.00 | ||||
| e | (REF.) | 1.27 | ||||
| E | 5.80 | 6.20 | ||||
| E1 | 3.80 | 4.00 | ||||
| L | 0.40 | 1.27 | ||||
| (0) | 8 | |||||
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