Low Gate Charge 150V N Channel Power MOSFET Siliup SP015N04AGHTO for Power Conversion Applications
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Product Description
Product Overview
The SP015N04AGHTO is a 150V N-Channel Power MOSFET from Siliup Semiconductor Technology Co. Ltd. This device features fast switching, low gate charge, and low RDS(on) thanks to its advanced split gate trench technology. It is designed for applications requiring high efficiency and reliability, including PWM applications, hard-switched, and high-frequency circuits, as well as power management systems. The MOSFET has undergone 100% single pulse avalanche energy testing.
Product Attributes
- Brand: Siliup Semiconductor Technology Co. Ltd.
- Device Code: SP015N04AGHTO
- Package: TOLL
- Technology: Advanced Split Gate Trench Technology
- Channel Type: N-Channel
- Origin: China (implied by www.siliup.com and company name)
Technical Specifications
| Parameter | Symbol | Conditions | Min. | Typ. | Max. | Unit |
|---|---|---|---|---|---|---|
| Product Summary | ||||||
| Drain-Source Voltage | V(BR)DSS | 150 | V | |||
| RDS(on) | RDS(on) | @10V | 3.7 | m | ||
| Continuous Drain Current | ID | 250 | A | |||
| Absolute Maximum Ratings | ||||||
| Drain-Source Voltage | VDS | (Ta=25) | 135 | V | ||
| Gate-Source Voltage | VGS | (Ta=25) | 20 | V | ||
| Continuous Drain Current | ID | (Tc=25) | 250 | A | ||
| Continuous Drain Current | ID | (Tc=100) | 167 | A | ||
| Pulsed Drain Current | IDM | 1000 | A | |||
| Single Pulse Avalanche Energy | EAS | (Note 1) | 1386 | mJ | ||
| Power Dissipation | PD | (Tc=25) | 196 | W | ||
| Thermal Resistance Junction-to-Case | RJC | 0.64 | /W | |||
| Storage Temperature Range | TSTG | -55 | 150 | |||
| Operating Junction Temperature Range | TJ | -55 | 150 | |||
| Electrical Characteristics | ||||||
| Drain-Source Breakdown Voltage | BVDSS | ID = 250A, VGS = 0V | 135 | 150 | - | V |
| Drain-Source Leakage Current | IDSS | VDS =108V, VGS = 0V | - | - | 1 | uA |
| Gate-Source Leakage Current | IGSS | VGS = 20V, VDS = 0V | - | - | 100 | nA |
| Gate Threshold Voltage | VGS(th) | VDS = VGS, ID = 250A | 2 | 3 | 4 | V |
| Static Drain-Source On-Resistance | RDS(ON) | VGS = 10V, ID = 20A | - | 3.7 | 4.2 | m |
| Input Capacitance | Ciss | VDS=75V , VGS=0V , f=1MHz | - | 9023 | - | pF |
| Output Capacitance | Coss | VDS=75V , VGS=0V , f=1MHz | - | 587 | - | pF |
| Reverse Transfer Capacitance | Crss | VDS=75V , VGS=0V , f=1MHz | - | 23 | - | pF |
| Total Gate Charge | Qg | VDS=75V , VGS=10V , ID=20A | - | 89 | - | nC |
| Gate-Source Charge | Qgs | VDS=75V , VGS=10V , ID=20A | - | 43 | - | nC |
| Gate-Drain Charge | Qgd | VDS=75V , VGS=10V , ID=20A | - | 28 | - | nC |
| Turn-On Delay Time | Td(on) | VDD=75V, VGS=10V , RG=3.0, ID=20A | - | 26 | - | nS |
| Rise Time | Tr | VDD=75V, VGS=10V , RG=3.0, ID=20A | - | 39 | - | nS |
| Turn-Off Delay Time | Td(off) | VDD=75V, VGS=10V , RG=3.0, ID=20A | - | 54 | - | nS |
| Fall Time | Tf | VDD=75V, VGS=10V , RG=3.0, ID=20A | - | 21 | - | nS |
| Diode Forward Voltage | VSD | VGS=0V , IS=1A , TJ=25 | - | - | 1.2 | V |
| Maximum Body-Diode Continuous Current | IS | - | - | 250 | A | |
| Reverse Recovery Time | Trr | IS=140A, di/dt=100A/us, TJ=25 | - | 175 | - | nS |
| Reverse Recovery Charge | Qrr | IS=140A, di/dt=100A/us, TJ=25 | - | 544 | - | nC |
| Package Information (TOLL) | ||||||
| Dimension | Symbol | Min. | Nom. | Max. | Unit | |
| A | A | 2.20 | 2.30 | 2.40 | mm | |
| b | b | 0.65 | 0.75 | 0.85 | mm | |
| C | C | 0.508 | REF | mm | ||
| D | D | 10.25 | 10.40 | 10.55 | mm | |
| D1 | D1 | 2.85 | 3.00 | 3.15 | mm | |
| E | E | 9.75 | 9.90 | 10.05 | mm | |
| E1 | E1 | 9.65 | 9.80 | 9.95 | mm | |
| E2 | E2 | 8.95 | 9.10 | 9.25 | mm | |
| E3 | E3 | 7.25 | 7.40 | 7.55 | mm | |
| e | e | 1.20 | BSC | mm | ||
| F | F | 1.05 | 1.20 | 1.35 | mm | |
| H | H | 11.55 | 11.70 | 11.85 | mm | |
| H1 | H1 | 6.03 | 6.18 | 6.33 | mm | |
| H2 | H2 | 6.85 | 7.00 | 7.15 | mm | |
| H3 | H3 | 3.00 | BSC | mm | ||
| L | L | 1.55 | 1.70 | 1.85 | mm | |
| L1 | L1 | 0.55 | 0.7 | 0.85 | mm | |
| L2 | L2 | 0.45 | 0.6 | 0.75 | mm | |
| M | M | 0.08 | REF. | mm | ||
| 8 | 10 | 12 | ||||
| K | K | 4.25 | 4.40 | 4.55 | mm | |
Note: 1. The test condition for EAS is VDD=50V, VGS=10V, L=0.5mH, RG=25.
Order Information:
| Device | Package | Unit/Tape |
|---|---|---|
| SP015N0AGHTO | TOLL | 2000 |
| SP015N04AGHTO | TOLL | 2000 |
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