20V Complementary MOSFET Siliup SP2012CNJ Featuring Low RDSon and Gate Charge for Power Applications

Price Negotiable

Price: Negotiable

MOQ: Negotiable

Delivery Time: Negotiable

Product Description

Product Overview

The SP2012CNJ is a 20V complementary MOSFET from Siliup Semiconductor Technology Co. Ltd., designed with TrenchFET technology for excellent RDS(on) and low gate charge. This device is suitable for applications such as bridges and inverters. It is available in a PDFN3X3-8L package.

Product Attributes

Brand: Siliup Semiconductor Technology Co. Ltd.
Product Code: SP2012CNJ
Complementary MOSFET: Yes
Package: PDFN3X3-8L
Marking: 2012C = Device code; * = Month Code

Technical Specifications

Product Summary	N-Channel	P-Channel
V(BR)DSS	20V	-20V
RDS(on)TYP	15m@10V, 19m@4.5V	25m@-10V, 30m@-4.5V
ID	20A	-19A

nS nS nS nS nC nC nC V

Parameter	Symbol	Value		Unit
Parameter	Symbol	N-Channel	P-Channel	Unit
Absolute Maximum Ratings (Ta=25 unless otherwise noted)
Drain-Source Voltage	VDS	20	-20	V
Gate-Source Voltage	VGS	12	12	V
Continuous Drain Current (t10s)	ID	20	-19	A
Power Dissipation (t10s)	PD	14		W
Thermal Resistance from Junction to Cassette (t10s)	RJC	8.9		/W
Junction Temperature	TJ	150
Storage Temperature	TSTG	-55 ~ +150
N-Channel Electrical Characteristics (TA=25C, unless otherwise noted)
Drain-Source Breakdown Voltage	BVDSS	20 (VGS=0V, ID=250A)		V
Zero Gate Voltage Drain Current	IDSS	1 (VDS=20V, VGS=0V)		A
Gate-Body Leakage Current	IGSS	100 (VGS=12V, VDS=0V)		nA
Gate Threshold Voltage	VGS(th)	0.5 ~ 1.0 (VDS=VGS, ID=250A)		V
Drain-Source On-State Resistance	RDS(ON)	15 (VGS=4.5V, ID=8A) 19 (VGS=2.5V, ID=6A)		m
Input Capacitance	Ciss	630 (VDS=10V, VGS=0V, f=1.0MHz)		pF
Output Capacitance	Coss	131 (VDS=10V, VGS=0V, f=1.0MHz)		pF
Reverse Transfer Capacitance	Crss	112 (VDS=10V, VGS=0V, f=1.0MHz)		pF
Turn-on Delay Time	td(on)	4.2 (VGS=4.5V, VDS=12V, ID=10A, RGEN=3.0)
Turn-on Rise Time	tr	16 (VGS=4.5V, VDS=12V, ID=10A, RGEN=3.0)
Turn-Off Delay Time	td(off)	18 (VGS=4.5V, VDS=12V, ID=10A, RGEN=3.0)
Turn-Off Fall Time	tf	7.4 (VGS=4.5V, VDS=12V, ID=10A, RGEN=3.0)
Total Gate Charge	Qg	12.6 (VGS=4.5V, VDS=12V, ID=10A)
Gate-Source Charge	Qgs	2.2 (VGS=4.5V, VDS=12V, ID=10A)
Gate-Drain Charge	Qgd	3.1 (VGS=4.5V, VDS=12V, ID=10A)
Diode Forward Voltage	VSD	1.2 (VGS=0V, IS=1A)
P-Channel Electrical Characteristics (TA=25C, unless otherwise noted)
Drain-Source Breakdown Voltage	BVDSS		-20 (VGS=0V, ID=-250uA)	V
Drain-Source Leakage Current	IDSS		1 (VDS=-20V, VGS=0V, TJ=25)	uA
Gate-Source Leakage Current	IGSS		100 (VGS=12V, VDS=0V)	nA
Gate Threshold Voltage	VGS(th)		-0.5 ~ -1.0 (VGS=VDS, ID =-250uA)	V
Static Drain-Source On-Resistance	RDS(ON)		25 (VGS=-4.5V, ID=-6A) 30 (VGS=-2.5V, ID=-4A)	m
Input Capacitance	Ciss		868 (VDS=-10V, VGS=0V, f=1MHz)	pF
Output Capacitance	Coss		151 (VDS=-10V, VGS=0V, f=1MHz)	pF
Reverse Transfer Capacitance	Crss		115 (VDS=-10V, VGS=0V, f=1MHz)	pF
Total Gate Charge	Qg		40.1 (VDS=-10V, VGS=-4.5V, ID=-12A)	nC
Gate-Source Charge	Qgs		8.3 (VDS=-10V, VGS=-4.5V, ID=-12A)	nC
Gate-Drain Charge	Qgd		9.1 (VDS=-10V, VGS=-4.5V, ID=-12A)	nC
Turn-On Delay Time	Td(on)		9 (VDD=-12V, VGS=-4.5V, RG=3.0, ID=-1A)	ns
Rise Time	Tr		19 (VDD=-12V, VGS=-4.5V, RG=3.0, ID=-1A)	ns
Turn-Off Delay Time	Td(off)		75 (VDD=-12V, VGS=-4.5V, RG=3.0, ID=-1A)	ns
Fall Time	Tf		48 (VDD=-12V, VGS=-4.5V, RG=3.0, ID=-1A)	ns
Diode Forward Voltage	VSD		-1.2 (VGS=0V, IS=-1A, TJ=25)	V

PDFN3X3-8L Package Information
Symbol	Dimensions In Millimeters	Dimensions In Inches
	Min.	Max.	Min.	Max.
A	0.650	0.850	0.026	0.033
A1	0.152 REF. (0.006 REF.)
A2	0~0.05	0~0.002
D	2.900	3.100	0.114	0.122
D1	0.935	1.135	0.037	0.045
D2	0.280	0.480	0.011	0.019
E	2.900	3.100	0.114	0.122
E1	3.150	3.450	0.124	0.136
E2	1.535	1.935	0.060	0.076
b	0.200	0.400	0.008	0.016
e	0.550	0.750	0.022	0.030
L	0.300	0.500	0.012	0.020
L1	0.180	0.480	0.007	0.019
L2	0~0.100	0~0.004
L3	0~0.100	0~0.004
H	0.315	0.515	0.012	0.020
	9	13	9	13