Power Management MOSFET Siliup 2N7002KNC N Channel Type with 60V Drain Source Voltage and ESD Protection
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Product Description
Product Overview
The 2N7002KNC is a 60V N-Channel MOSFET from Shanghai Siliup Semiconductor Technology Co. Ltd. It features a super high density cell design for extremely low RDS(ON) and exceptional on-resistance and maximum DC current capability. This MOSFET is capable of Cu wire bonding and is ESD protected (HBM 2KV). It is designed for power management applications in notebooks, portable equipment, and battery-powered systems.
Product Attributes
- Brand: Shanghai Siliup Semiconductor Technology Co. Ltd.
- Model: 2N7002KNC
- Technology: N-Channel MOSFET
- ESD Protection: HBM 2KV
- Wire Bonding: Capable of Cu wire bonding
Technical Specifications
| Parameter | Symbol | Test Condition | Min. | Typ. | Max. | Unit |
|---|---|---|---|---|---|---|
| Product Summary | ||||||
| Drain-Source Voltage | V(BR)DSS | 60 | V | |||
| On-Resistance (Typ.) | RDS(on)TYP | @10V | 1.1 | |||
| On-Resistance (Typ.) | RDS(on)TYP | @4.5V | 1.4 | |||
| Continuous Drain Current | ID | 340 | mA | |||
| Absolute Maximum Ratings (Ta=25 unless otherwise noted) | ||||||
| Drain-Source Voltage | VDS | 60 | V | |||
| Gate-Source Voltage | VGS | 20 | V | |||
| Continuous Drain Current | ID | 340 | mA | |||
| Power Dissipation | PD | 0.15 | W | |||
| Thermal Resistance Junction to Ambient | RJA | 833 | /W | |||
| Junction Temperature | TJ | 150 | ||||
| Storage Temperature | TSTG | -55 | +150 | |||
| Electrical Characteristics (TA=25 oC, unless otherwise noted) | ||||||
| Drain-Source Breakdown Voltage | BVDSS | VGS=0V, ID=250A | 60 | V | ||
| Gate Threshold Voltage | VGS(th) | VDS=VGS, ID=250A | 1 | 1.5 | 2.5 | V |
| Gate-Body Leakage | IGSS | VDS=0V, VGS=20V | 10 | A | ||
| Zero Gate Voltage Drain Current | IDSS | VDS=60V, VGS=0V | 1 | A | ||
| Drain-Source On-Resistance | RDS(ON) | VGS=10V, ID=200mA | 1.1 | 3 | ||
| Drain-Source On-Resistance | RDS(ON) | VGS=4.5V, ID=200mA | 1.4 | 4 | ||
| Total Gate Charge | Qg | VDS=10V, VGS=4.5V, ID=250mA | 0.3 | nC | ||
| Gate-Source Charge | Qgs | 0.2 | ||||
| Gate-Drain Charge | Qgd | 0.08 | ||||
| Input Capacitance | Ciss | VDS=25V, VGS=0V, f=1MHz | 30 | 50 | pF | |
| Output Capacitance | Coss | 4.2 | 25 | pF | ||
| Reverse Transfer Capacitance | Crss | 2.9 | 5 | pF | ||
| Turn-On Delay Time | td(on) | VDD=30V,ID=200mA, VGEN=10V, RG =25 | 3.9 | ns | ||
| Turn-On Rise Time | tR | 3.4 | ns | |||
| Turn-Off Delay Time | td(off) | 15.7 | ns | |||
| Turn-Off Fall Time | tF | 9.9 | ns | |||
| Diode Forward Voltage | VSD | IS=200mA, VGS=0V | 0.82 | 1.3 | V | |
| Package Information: DFN1006-3L | ||||||
| Symbol | Dimensions (mm) Min. | Dimensions (mm) Max. | ||||
| A | 0.46 | 0.51 | ||||
| A1 | 0 | 0.05 | ||||
| b | 0.45 | 0.55 | ||||
| b1 | 0.1 | 0.2 | ||||
| c | 0.08 | 0.18 | ||||
| D | 0.95 | 1.05 | ||||
| D1 | 0.65 | |||||
| E | 0.55 | 0.65 | ||||
| E1 | 0.325 | |||||
| L | 0.2 | 0.3 | ||||
| L1 | 0.2 | 0.3 | ||||
| R | 0.05 | 0.15 | ||||
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