Sichainsemi SG2M040075JJ SiC Power MOSFET Offering Low Reverse Recovery and High Switching Frequency
Product Overview
The SG2M040075JJ is a 750V Silicon Carbide (SiC) Power MOSFET from Sichain Semiconductor, designed for high-speed switching applications. It offers very low switching losses, fully controllable dv/dt, high blocking voltage with low on-resistance, and a fast intrinsic diode with low reverse recovery. These features contribute to reduced cooling efforts, improved efficiency, increased power density, and the ability to operate at higher system switching frequencies. Key applications include on-board chargers, EV battery chargers, booster/DC-DC converters, and switch-mode power supplies.
Product Attributes
- Brand: Sichain Semiconductor ()
- Product Line: TriQSiCTM
- Material: Silicon Carbide (SiC)
- Channel Type: N Channel Enhancement
- Compliance: Halogen free, RoHS compliant
Technical Specifications
| Type | VDS (V) | IDS (TC = 25) (A) | RDS(on), typ (VGS = 18V, ID = 22A, TJ = 25) (m) | TJ,max () | Marking | Package |
|---|---|---|---|---|---|---|
| SG2M040075JJ | 750 | 69 | 40 | 175 | SG2M040075JJ | TO-263-7L |
| Symbol | Parameter | Value | Unit | Test Conditions | Note |
|---|---|---|---|---|---|
| VDS,max | Drain source voltage | 750 | V | VGS = 0V, ID = 100A | |
| VGS,max | Gate source voltage | -8 /+22 | V | Absolute maximum values | Note1 |
| VGSop | Gate source voltage | -4 /+18 | V | Recommended operational values | |
| ID | Continuous drain current | 69 | A | VGS = 18V, TC = 25C | Fig.19 |
| ID | Continuous drain current | 49 | A | VGS = 18V, TC = 100C | |
| ID(pulse) | Pulsed drain current | 138 | A | Pulse width tP limited by TJ,max | Fig.22 |
| PD | Power dissipation | 312 | W | TC= 25C,TJ = 175C | Fig.20 |
| TJ ,Tstg | Operating Junction and storage temperature | -55 to +175 | C | ||
| TL | Soldering temperature | 260 | C | 1.6mm (0.063) from case for 10s | |
| TM | Mounting torque | 1.8 | Nm lbf-in | M3 or 6-32 screw | |
| V(BR)DSS | Drain-source breakdown voltage | 750 | V | VGS = 0V, ID = 100A | |
| VGS(th) | Gate threshold voltage | 2.3 - 3.6 | V | VDS = VGS, ID = 8.5mA | Fig.11 |
| VGS(th) | Gate threshold voltage | 2.2 | V | VDS = VGS, ID = 8.5mA, TJ = 175C | |
| IDSS | Zero gate voltage drain current | 1 - 10 | A | VDS = 750V, VGS = 0V | |
| IGSS | Gate source leakage current | 100 | nA | VGS = 18V, VDS = 0V | |
| RDS(on) | Current drain-source on-state resistance | 40 - 52 | m | VGS = 18V, ID = 22A | Fig.4,5, 6 |
| RDS(on) | Current drain-source on-state resistance | 65 | m | VGS = 18V, ID = 22A, TJ = 175C | |
| gfs | Transconductance | 16 | S | VDS = 20V, ID = 22A | Fig.7 |
| gfs | Transconductance | 15 | S | VDS = 20V, ID = 22A, TJ = 175C | |
| Rg,int | Internal gate resistance | 2.6 | VAC = 25mV, f = 1MHz, open drain | ||
| Ciss | Input capacitance | 1540 | pF | VDS = 500V, VGS = 0V, TJ = 25C, VAC = 25mV, f = 100kHz | Fig.17, 18 |
| Coss | Output capacitance | 127 | pF | ||
| Crss | Reverse capacitance | 6.0 | pF | ||
| Eoss | Coss stored energy | 20 | J | Fig.16 | |
| Qgs | Gate source charge | 16 | nC | VDS = 500V, VGS = -4/+18V, ID = 22A | Fig.12 |
| Qgd | Gate drain charge | 15 | nC | ||
| Qg | Gate charge | 48 | nC | ||
| Eon | Turn on switching energy | 111 | J | VDS = 500V, VGS = -4/+18V, ID = 22A, Rg = 2.5, L = 120H | Fig.26 |
| Eoff | Turn off switching energy | 26 | J | ||
| tdon | Turn on delay time | 13 | ns | Fig.27 | |
| tr | Rise time | 10 | ns | ||
| tdoff | Turn off delay time | 27 | ns | ||
| tf | Fall time | 9.5 | ns | ||
| VSD | Diode forward voltage | 3.6 | V | VGS = -4V, ISD = 11A | Fig.8,9, 10 |
| VSD | Diode forward voltage | 3.2 | V | VGS = -4V, ISD = 11A, TJ = 175C | |
| IS | Continuous diode forward current | 67 | A | VGS = -4V, Tc = 25C | Note2 |
| trr | Reverse recovery time | 15 | ns | VR = 500V, VGS = -4V, ISD = 22A, di/dt = 1928A/s, TJ = 175C | |
| Qrr | Reverse recovery charge | 94 | nC | ||
| Irrm | Peak reverse recovery current | 12 | A | ||
| Rth(j-c) | Thermal resistance from junction to case | 0.38 - 0.48 | C/W | Fig.21 |
Note 1: when using MOSFET Body Diode VGS,max = -4 / +22V
Note 2: When using SiC Body Diode the maximum recommended VGS = -4 V
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