High Frequency Power Switching MOSFET Siliup SP30P13P8 with Low RDSon and 30V Drain Source Voltage

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Product Description

Product Overview

The SP30P13P8 is a 30V P-Channel MOSFET from Siliup Semiconductor Technology Co. Ltd. Designed for power switching applications, it features fast switching speeds, low gate charge, and low RDS(on). This device is suitable for hard-switched and high-frequency circuits, as well as uninterruptible power supply systems. It has undergone 100% single pulse avalanche energy testing.

Product Attributes

Brand: Siliup Semiconductor Technology Co. Ltd.
Product Line: SP30P13P8
Material: Silicon
Package Type: SOP-8L
Marking: 30P13

Technical Specifications

Parameter	Symbol	Conditions	Min.	Typ.	Max.	Unit
Product Summary
Drain-Source Voltage	V(BR)DSS				-30	V
RDS(on) Typ.		@-10V		13	16	m
RDS(on) Typ.		@-4.5V		16	21	m
Continuous Drain Current	ID				-11	A
Absolute Maximum Ratings (Ta=25, unless otherwise noted)
Drain-Source Voltage	VDS				-30	V
Gate-Source Voltage	VGS				20	V
Continuous Drain Current	ID				-11	A
Pulsed Drain Current	IDM				-44	A
Single Pulse Avalanche Energy	EAS				12.8	mJ
Power Dissipation	PD				3.1	W
Junction-to-Ambient Thermal Resistance	RJA				40	/W
Storage Temperature Range	TSTG		-55		150
Operating Junction Temperature Range	TJ		-55		150
Electrical Characteristics (Ta=25, unless otherwise noted)
Drain-Source Breakdown Voltage	BVDSS	VGS=0V, ID=-250uA	-30	-	-	V
Drain-Source Leakage Current	IDSS	VDS=-24V, VGS=0V	-	-	-1	uA
Gate-Source Leakage Current	IGSS	VGS=20V, VDS=0V	-	-	100	nA
Gate Threshold Voltage	VGS(th)	VGS=VDS, ID =-250uA	-1.0	-1.5	-2.5	V
Static Drain-Source On-Resistance	RDS(ON)	VGS=-10V, ID=-10A	-	13	16	m
Static Drain-Source On-Resistance	RDS(ON)	VGS=-4.5V, ID=-7A	-	16	21	m
Dynamic Characteristics
Input Capacitance	Ciss	VDS=-15V, VGS=0V, f=1MHz	-	1600	-	pF
Output Capacitance	Coss		-	350	-	pF
Reverse Transfer Capacitance	Crss		-	300	-	pF
Total Gate Charge	Qg	VDS=-15V, VGS=-10V, ID=-10A	-	30	-	nC
Gate-Source Charge	Qgs		-	5.5	-	-
Gate-Drain Charge	Qgd		-	8	-	-
Switching Characteristics
Turn-On Delay Time	Td(on)	VDD=-15V,VGS=-10V,RG=3, ID=-10A	-	10	-	nS
Rise Time	Tr		-	60	-	-
Turn-Off Delay Time	Td(off)		-	52	-	-
Fall Time	Tf		-	70	-	-
Diode Characteristics
Diode Forward Voltage	VSD	VGS=0V, IS=-1A	-	-	-1.2	V
Maximum Body-Diode Continuous Current	IS		-	-	-11	A
Reverse Recovery Time	Trr	IS=-10A, di/dt=100A/us, TJ=25	-	35	-	nS
Reverse Recovery Charge	Qrr		-	11	-	nC
Package Information (SOP-8L)
Dimension	Symbol	Min. (mm)	Max. (mm)
Overall Height	A	1.35	1.75
Seating Plane Height	A1	0.10	0.25
Mold Height	A2	1.35	1.55
Lead Width	b	0.33	0.51
Lead Thickness	c	0.17	0.25
Package Length	D	4.80	5.00
Lead Pitch	e	1.27 REF.
Package Width	E	5.80	6.20
Body Width	E1	3.80	4.00
Lead Length	L	0.40	1.27
Lead Angle		0	8