High Current 40A 200V N Channel Planar MOSFET Siliup SP40N20TQ for Synchronous Rectification Circuits

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Product Description

Product Overview

The SP40N20TQ is a 200V N-Channel Planar MOSFET from Siliup Semiconductor Technology Co. Ltd. It features fast switching, low gate charge, and low RDS(on). This MOSFET is 100% tested for single pulse avalanche energy and is ideal for DC-DC converters, high-frequency switching, and synchronous rectification applications.

Product Attributes

Brand: Siliup Semiconductor Technology Co. Ltd.
Product Code: SP40N20TQ
Technology: Planar MOSFET
Channel Type: N-Channel
Package: TO-220-3L
Circuit Diagram Marking: 40N20 (Device Code), * (Week Code)

Technical Specifications

Parameter	Symbol	Conditions	Min.	Typ.	Max.	Unit
Product Summary
V(BR)DSS					200	V
RDS(on)TYP		@10V		54		m
ID					40	A
Features
Fast Switching
Low Gate Charge and Rdson
100% Single Pulse avalanche energy Test
Applications
DC-DC Converter
Ideal for high-frequency switching and synchronous rectification
Absolute Maximum Ratings (Ta=25, unless otherwise noted)
Drain-Source Voltage	VDS				200	V
Gate-Source Voltage	VGS				20	V
Continuous Drain Current (TC=25)	ID				40	A
Continuous Drain Current (TC=100)	ID				26	A
Pulsed Drain Current	IDM				160	A
Single Pulse Avalanche Energy¹	EAS				342	mJ
Power Dissipation (TC=25)	PD				230	W
Thermal Resistance Junction-to-Case	RJC			0.54		/W
Storage Temperature Range	TSTG		-55		150
Operating Junction Temperature Range	TJ		-55		150
Electrical Characteristics (Ta=25, unless otherwise noted)
Drain-Source Breakdown Voltage	BVDSS	VGS=0V , ID=250uA	200	-	-	V
Drain-Source Leakage Current	IDSS	VDS=160V , VGS=0V , TJ=25	-	-	1	uA
Gate-Source Leakage Current	IGSS	VGS=20V , VDS=0V	-	-	100	nA
Gate Threshold Voltage	VGS(th)	VGS=VDS , ID =250uA	2	3	4	V
Static Drain-Source On-Resistance	RDS(ON)	VGS=10V , ID=20A	-	54	65	m
Dynamic Characteristics
Input Capacitance	Ciss	VDS=25V , VGS=0V , f=1MHz	-	2580	-	pF
Output Capacitance	Coss		-	383	-	pF
Reverse Transfer Capacitance	Crss		-	25	-	pF
Total Gate Charge	Qg	VDS=200V , VGS=10V , ID=45A	-	45	-	nC
Gate-Source Charge	Qgs		-	17	-
Gate-Drain Charge	Qgd		-	16	-
Switching Characteristics
Turn-On Delay Time	Td(on)	VDD=125V VGS=10V , RG=10, ID=45A	-	33	-	nS
Rise Time	Tr		-	151	-
Turn-Off Delay Time	Td(off)		-	61	-
Fall Time	Tf		-	89	-
Diode Characteristics
Diode Forward Voltage	VSD	VGS=0V , IS=1A , TJ=25	-	-	1.2	V
Maximum Body-Diode Continuous Current	IS		-	-	40	A
Reverse Recovery Time	Trr	IS=20A, di/dt=100A/us, TJ=25	-	225	-	nS
Reverse Recovery Charge	Qrr		-	755	-	nC

Package Information

TO-220-3L Package Dimensions (Millimeters/Inches)

Symbol	Dimensions In Millimeters	Dimensions In Inches
Min.	Max.	Min.	Max.
A	4.400	4.600	0.173	0.181
A1	2.250	2.550	0.089	0.100
b	0.710	0.910	0.028	0.036
b1	1.170	1.370	0.046	0.054
c	0.330	0.650	0.013	0.026
c1	1.200	1.400	0.047	0.055
D	9.910	10.250	0.390	0.404
E	8.950	9.750	0.352	0.384
E1	12.650	13.050	0.498	0.514
e	2.540 TYP.	0.100 TYP.
e1	4.980	5.180	0.196	0.204
F	2.650	2.950	0.104	0.116
H	7.900	8.100	0.311	0.319
h	0.000	0.300	0.000	0.012
L	12.900	13.400	0.508	0.528
L1	2.850	3.250	0.112	0.128
V	6.900 REF.	0.276 REF.
	3.400	3.800	0.134	0.150