Dual P Channel MOSFET Siliup SP30P16DP8 30V Low Gate Charge Fast Switching Power Switching Component
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Delivery Time:
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Product Description
Product Overview
The SP30P16DP8 is a 30V Dual P-Channel MOSFET from Siliup Semiconductor Technology Co. Ltd. It features fast switching, low gate charge, and low RDS(on), making it suitable for power switching applications, hard switched and high frequency circuits, and uninterruptible power supplies. The device is 100% tested for single pulse avalanche energy.
Product Attributes
- Brand: Siliup Semiconductor Technology Co. Ltd.
- Product Code: SP30P16DP8
- Device Code: 30P16D
- Package: SOP-8L
- Origin: China (implied by www.siliup.com)
Technical Specifications
| Parameter | Symbol | Conditions | Min. | Typ. | Max. | Unit |
|---|---|---|---|---|---|---|
| Product Summary | ||||||
| V(BR)DSS | -30 | V | ||||
| RDS(on)TYP | @-10V | 16 | 20 | m | ||
| RDS(on)TYP | @-4.5V | 21 | 30 | m | ||
| ID | -7.5 | A | ||||
| Absolute Maximum Ratings | ||||||
| Drain-Source Voltage | VDS | (Ta=25) | -30 | V | ||
| Gate-Source Voltage | VGS | (Ta=25) | 20 | V | ||
| Continuous Drain Current | ID | (Ta=25) | -7.5 | A | ||
| Pulsed Drain Current | IDM | (Ta=25) | -30 | A | ||
| Single Pulse Avalanche Energy | EAS | (Ta=25) | 7.2 | mJ | ||
| Power Dissipation | PD | (Ta=25) | 1.5 | W | ||
| Thermal Resistance Junction-to-Ambient | RJA | (Ta=25) | 85 | /W | ||
| Storage Temperature Range | TSTG | -55 | 150 | |||
| Operating Junction Temperature Range | TJ | -55 | 150 | |||
| Electrical Characteristics | ||||||
| Drain-Source Breakdown Voltage | BVDSS | VGS=0V , ID=-250uA | -30 | V | ||
| Drain-Source Leakage Current | IDSS | VDS=-24V , VGS=0V | -1 | uA | ||
| Gate-Source Leakage Current | IGSS | VGS=20V , VDS=0V | 100 | nA | ||
| Gate Threshold Voltage | VGS(th) | VGS=VDS , ID =-250uA | -1.0 | -1.5 | -2.5 | V |
| Static Drain-Source On-Resistance | RDS(ON) | VGS=-10V , ID=-4A | 16 | 20 | m | |
| Static Drain-Source On-Resistance | RDS(ON) | VGS=-4.5V , ID=-3A | 21 | 30 | m | |
| Dynamic Characteristics | ||||||
| Input Capacitance | Ciss | VDS=-15V , VGS=0V , f=1MHz | 1360 | pF | ||
| Output Capacitance | Coss | VDS=-15V , VGS=0V , f=1MHz | 250 | pF | ||
| Reverse Transfer Capacitance | Crss | VDS=-15V , VGS=0V , f=1MHz | 200 | pF | ||
| Total Gate Charge | Qg | VDS=-15V , VGS=-10V , ID=-10A | 30 | nC | ||
| Gate-Source Charge | Qgs | VDS=-15V , VGS=-10V , ID=-10A | 3.5 | nC | ||
| Gate-Drain Charge | Qg d | VDS=-15V , VGS=-10V , ID=-10A | 9.2 | nC | ||
| Switching Characteristics | ||||||
| Turn-On Delay Time | Td(on) | VDD=-30V, VGS=-10V ,RG=2.5, ID=-9A | 9 | nS | ||
| Rise Time | Tr | VDD=-30V, VGS=-10V ,RG=2.5, ID=-9A | 11 | nS | ||
| Turn-Off Delay Time | Td(off) | VDD=-30V, VGS=-10V ,RG=2.5, ID=-9A | 23 | nS | ||
| Fall Time | Tf | VDD=-30V, VGS=-10V ,RG=2.5, ID=-9A | 10 | nS | ||
| Diode Characteristics | ||||||
| Diode Forward Voltage | VSD | VGS=0V , IS=-1A | -1.2 | V | ||
| Maximum Body-Diode Continuous Current | IS | -7.5 | A | |||
| Reverse recovery time | Trr | IS=-5A, di/dt=100A/us, Tj=25 | 23 | nS | ||
| Reverse recovery charge | Qrr | IS=-5A, di/dt=100A/us, Tj=25 | 15 | nC | ||
| Package Information (SOP-8L) | ||||||
| Symbol | Dimensions (mm) | Min. | Max. | |||
| A | 1.35 | 1.75 | ||||
| A1 | 0.10 | 0.25 | ||||
| A2 | 1.35 | 1.55 | ||||
| b | 0.33 | 0.51 | ||||
| c | 0.17 | 0.25 | ||||
| D | 4.80 | 5.00 | ||||
| e | (REF.) | 1.27 | ||||
| E | 5.80 | 6.20 | ||||
| E1 | 3.80 | 4.00 | ||||
| L | 0.40 | 1.27 | ||||
| 0 | 8 | |||||
Note: 1. The EAS Test condition is VDD=-15V, VGS =-10V, L = 0.1mH, Rg=25
Order Information: SP30P16DP8, SOP-8L, 4000 units/tape
Marking: 30P16D (Device Code), *: Week Code
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