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N Channel MOSFET 30 Volt with Low On Resistance and High Current Capability Siliup SP30N03ANJ Device

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Product Description

Product Overview

The SP30N03ANJ is a 30V N-Channel MOSFET from Siliup Semiconductor Technology Co. Ltd. It features fast switching speeds and low on-resistance, with typical RDS(on) values of 2.9m at 10V and 4.5m at 4.5V. This MOSFET is 100% tested for single pulse avalanche energy and is suitable for applications such as DC-DC converters and power management.

Product Attributes

  • Brand: Siliup Semiconductor Technology Co. Ltd.
  • Product Type: N-Channel MOSFET
  • Package: PDFN3X3-8L
  • Device Code: 30N03A

Technical Specifications

Parameter Symbol Conditions Min. Typ. Max. Unit
Drain-Source Voltage V(BR)DSS 30 V
On-Resistance (Typ.) RDS(on)TYP @10V 2.9 4.2 m
On-Resistance (Typ.) RDS(on)TYP @4.5V 4.5 m
Continuous Drain Current ID 65 A
Single Pulse Avalanche Energy EAS 130 mJ
Drain-Source Breakdown Voltage BVDSS VGS=0V , ID=250uA 30 - - V
Gate Threshold Voltage VGS(th) VGS=VDS , ID =250uA 1.0 1.5 2.5 V
Static Drain-Source On-Resistance RDS(ON) VGS=10V, ID=20A - 2.9 4.2 m
Static Drain-Source On-Resistance RDS(ON) VGS=4.5V, ID=15A - 4.5 - m
Input Capacitance Ciss VDS=15V , VGS=0V , f=1MHz - 3068 - pF
Output Capacitance Coss - 369 - pF
Reverse Transfer Capacitance Crss - 289 - pF
Total Gate Charge Qg VDS=15V , VGS=10V , ID=20A - 44 - nC
Turn-On Delay Time Td(on) VDD=15V VGS=10V , RG=3, ID=30A - 10 - nS
Rise Time Tr - 29 - nS
Turn-Off Delay Time Td(off) - 46 - nS
Fall Time Tf - 17 - nS
Diode Forward Voltage VSD VGS=0V , IS=1A , TJ=25 - - 1.2 V
Maximum Body-Diode Continuous Current IS - - 65 A
Reverse recover time Trr IS=30A, di/dt=100A/us, Tj=25 - 17 - nS
Reverse recovery charge Qrr - 7 - nC
Package Dimensions (D) 2.900 - 3.100 mm
Package Dimensions (E) 2.900 - 3.100 mm

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Company Hefei Purple Horn E-Commerce Co., Ltd.
Location Room 1306B, Building A, Xindi Center, Qimen Road, Hefei City, Anhui Province
Contact Person Sellina

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