High Power Complementary MOSFET Siliup SP6012CTM 60V Lead Free Surface Mount for Battery Protection

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Product Description

Product Overview

The SP6012CTM is a 60V Complementary MOSFET from Siliup Semiconductor Technology Co. Ltd. It offers high power and current handling capability, making it suitable for applications such as Battery Protection, Load Switches, and Power Management. This lead-free product is available in a surface mount TO-252-4L package and has undergone 100% Single Pulse avalanche energy testing.

Product Attributes

Brand: Siliup Semiconductor Technology Co. Ltd.
Product Type: Complementary MOSFET
Package: TO-252-4L
Certifications: Lead free product acquired

Technical Specifications

Parameter	Symbol	Conditions	Min.	Typ.	Max.	Units
Product Summary
V(BR)DSS					60	V
RDS(on)TYP		@10V		15		m
ID				35		A
RDS(on)TYP		@4.5V		17		m
V(BR)DSS				-60		V
RDS(on)TYP		@-10V		17		m
ID				-60		A
RDS(on)TYP		@-4.5V		23		m
Absolute Maximum Ratings (Ta=25, unless otherwise noted)
Drain-Source Voltage	VDS		60 (N-Ch) / -60 (P-Ch)			V
Gate-Source Voltage	VGS		20 (N-Ch) / 20 (P-Ch)			V
Continuous Drain Current (TC=25)	ID		35 (N-Ch) / -60 (P-Ch)			A
Continuous Drain Current (TC=100)	ID		23 (N-Ch) / -40 (P-Ch)			A
Pulsed Drain Current	IDM		140 (N-Ch) / -240 (P-Ch)			A
Single Pulse Avalanche Energy	EAS		100 (N-Ch) / 182 (P-Ch)			mJ
Power Dissipation (TC=25)	PD				80	W
Thermal Resistance Junction-to-Case	RJC			1.6		/W
Storage Temperature Range	TSTG		-55		150
Operating Junction Temperature Range	TJ		-55		150
N-Channel Electrical Characteristics (Ta=25, unless otherwise noted)
Drain-Source Breakdown Voltage	BVDSS	VGS=0V , ID=250uA	60	-	-	V
Drain-Source Leakage Current	IDSS	VDS=48V , VGS=0V , TJ=25	-	-	1	uA
Gate-Source Leakage Current	IGSS	VGS=20V , VDS=0V	-	-	100	nA
Gate Threshold Voltage	VGS(th)	VGS=VDS , ID =250uA	1.0	1.6	2.5	V
Static Drain-Source On-Resistance	RDS(ON)	VGS=10V , ID=10A	-	15	19	m
Static Drain-Source On-Resistance	RDS(ON)	VGS=4.5V , ID=8A	-	17	23	m
Input Capacitance	Ciss	VDS=30V , VGS=0V , f=1MHz	-	2403	-	pF
Output Capacitance	Coss		-	130	-	pF
Reverse Transfer Capacitance	Crss		-	116	-
Total Gate Charge	Qg	VDS=30V , VGS=10V , ID=10A	-	39	-	nC
Gate-Source Charge	Qgs		-	5.6	-
Gate-Drain Charge	Qgd		-	9.5	-
Turn-On Delay Time	Td(on)	VDD=30V, VGS=10V , RG=3, ID=10A	-	7.8	-	nS
Rise Time	Tr		-	48	-
Turn-Off Delay Time	Td(off)		-	28	-
Fall Time	Tf		-	30	-
Diode Forward Voltage	VSD	VGS=0V , IS=1A , TJ=25	-	-	1.2	V
Maximum Body-Diode Continuous Current	IS		-	-	35	A
Reverse Recovery Time	Trr	IS=20A, di/dt=100A/us, TJ=25	-	19	-	nS
Reverse Recovery Charge	Qrr		-	84	-	nC
P-Channel Electrical Characteristics (Ta=25, unless otherwise noted)
Drain-Source Breakdown Voltage	BVDSS	VGS=0V , ID=-250uA	-60	-	-	V
Drain-Source Leakage Current	IDSS	VDS=-48V , VGS=0V , TJ=25	-	-	-1	uA
Gate-Source Leakage Current	IGSS	VGS=20V , VDS=0V	-	-	100	nA
Gate Threshold Voltage	VGS(th)	VGS=VDS , ID =-250uA	-	-1	-2.5	V
Static Drain-Source On-Resistance	RDS(ON)	VGS=-10V , ID=-5A	-	17	22	m
Static Drain-Source On-Resistance	RDS(ON)	VGS=-4.5V , ID=-4A	-	23	33	m
Input Capacitance	Ciss	VDS=-30V , VGS=0V , f=1MHz	-	4417	-	pF
Output Capacitance	Coss		-	179	-	pF
Reverse Transfer Capacitance	Crss		-	150	-
Total Gate Charge	Qg	VDS=-30V , VGS=-10V , ID=-10A	-	63	-	nC
Gate-Source Charge	Qgs		-	18	-
Gate-Drain Charge	Qgd		-	9.2	-
Turn-On Delay Time	Td(on)	VDD=-30V, VGS=-10V ,RG=4.5,ID=-10A	-	62	-	nS
Rise Time	Tr		-	76	-
Turn-Off Delay Time	Td(off)		-	371	-
Fall Time	Tf		-	157	-
Diode Forward Voltage	VSD	VGS=0V , IS=-1A , TJ=25	-	-	-1.2	V
Maximum Body-Diode Continuous Current	IS		-	-	-60	A
Reverse Recovery Time	Trr	IS=-15A, di/dt=100A/us, TJ=25	-	33	-	nS
Reverse Recovery Charge	Qrr		-	36	-	nC
Package Information (TO-252-4L)
Symbol	Dimensions In Millimeters	Min.	Max.
A		2.20	2.40
A1		0	0.15
b		0.40	0.60
b2		0.50	0.80
b3		5.20	5.50
c2		0.45	0.55
D		5.40	5.80
D1		4.57	-
E		6.40	6.80
E1		3.81	-
e		1.27REF.
F		0.40	0.60
H		9.40	10.20
L		1.40	1.77
L1		2.40	3.00
L4		0.80	1.20