40V N-Channel MOSFET Siliup SP40N03GNK optimized for low Rdson and fast switching speed applications
Price:
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MOQ:
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Delivery Time:
Negotiable
Product Description
Product Overview
The SP40N03GNK is a 40V N-Channel Power MOSFET from Siliup Semiconductor Technology Co. Ltd., engineered for efficient power management. It features fast switching speeds, low Gate Charge and Rdson, and utilizes advanced Split Gate Trench Technology. This MOSFET is 100% tested for single pulse avalanche energy, making it suitable for demanding applications such as DC-DC converters, motor control, and portable equipment.
Product Attributes
- Brand: Siliup Semiconductor Technology Co. Ltd.
- Product Code: SP40N03GNK
- Device Code: 40N03G
- Technology: Advanced Split Gate Trench Technology
- Channel Type: N-Channel
- Package: PDFN5X6-8L
Technical Specifications
| Parameter | Symbol | Conditions | Min. | Typ. | Max. | Unit |
|---|---|---|---|---|---|---|
| Product Summary | ||||||
| Drain-Source Voltage | V(BR)DSS | 40 | V | |||
| RDS(on) | @10V | 3 | m | |||
| RDS(on) | @4.5V | 4 | m | |||
| ID | 90 | A | ||||
| Absolute Maximum Ratings | ||||||
| Drain-Source Voltage | VDSS | (Ta=25) | 40 | V | ||
| Gate-Source Voltage | VGSS | (Ta=25) | 20 | V | ||
| Continuous Drain Current | ID | (Tc=25C) | 90 | A | ||
| Continuous Drain Current | ID | (Tc=100C) | 60 | A | ||
| Pulse Drain Current | IDM | Tested | 360 | A | ||
| Single pulsed avalanche energy | EAS | 169 | mJ | |||
| Power Dissipation | PD | (Tc=25C) | 65 | W | ||
| Thermal Resistance Junction-to-Case | RJC | 1.92 | C/W | |||
| Storage Temperature Range | TSTG | -55 | 150 | C | ||
| Operating Junction Temperature Range | TJ | -55 | 150 | C | ||
| Electrical Characteristics | ||||||
| Drain-Source Breakdown Voltage | BVDSS | VGS=0V , ID=250uA | 40 | - | - | V |
| Drain-Source Leakage Current | IDSS | VDS=32V , VGS=0V , TJ=25 | - | - | 1 | uA |
| Gate-Source Leakage Current | IGSS | VGS=20V , VDS=0V | - | - | 100 | nA |
| Gate Threshold Voltage | VGS(th) | VGS=VDS , ID =250uA | 1.0 | 1.5 | 2.5 | V |
| Static Drain-Source On-Resistance | RDS(ON) | VGS =10V, ID =20A | - | 3 | 3.7 | m |
| Static Drain-Source On-Resistance | RDS(ON) | VGS =4.5V, ID =10A | - | 4 | 5.3 | m |
| Dynamic Characteristics | ||||||
| Input Capacitance | Ciss | VDS=20V , VGS=0V , f=1MHz | - | 1675 | - | pF |
| Output Capacitance | Coss | - | 395 | - | ||
| Reverse Transfer Capacitance | Crss | - | 31 | - | ||
| Total Gate Charge | Qg | VDS=20V , VGS=20V , ID=30A | - | 26 | - | nC |
| Gate-Source Charge | Qgs | - | 8 | - | ||
| Gate-Drain Charge | Qg d | - | 5.5 | - | ||
| Switching Characteristics | ||||||
| Turn-On Delay Time | Td(on) | VDD=20 VGS=20V , RG=3, ID=30A | - | 8 | - | nS |
| Rise Time | Tr | - | 5 | - | ||
| Turn-Off Delay Time | Td(off) | - | 32 | - | ||
| Fall Time | Tf | - | 6.5 | - | ||
| Diode Characteristics | ||||||
| Diode Forward Voltage | VSD | VGS=0V , IS=1A , TJ=25 | - | - | 1.2 | V |
| Diode Continuous Current | IS | - | - | 90 | A | |
| Reverse recover time | Trr | IS=20A, di/dt=100A/us, Tj=25 | - | 14 | - | nS |
| Reverse recovery charge | Qrr | - | 23 | - | nC | |
| Package Information (PDFN5X6-8L) | ||||||
| Symbol | Dimensions In Millimeters | Dimensions In Inches | Min. | Max. | Min. | Max. |
| A | 0.900 - 1.000 | 0.035 - 0.039 | ||||
| A3 | 0.254REF. | 0.010REF. | ||||
| D | 4.944 - 5.096 | 0.195 - 0.201 | ||||
| E | 5.974 - 6.126 | 0.235 - 0.241 | ||||
| D1 | 3.910 - 4.110 | 0.154 - 0.162 | ||||
| E1 | 3.375 - 3.575 | 0.133 - 0.141 | ||||
| D2 | 4.824 - 4.976 | 0.190 - 0.196 | ||||
| E2 | 5.674 - 5.826 | 0.223 - 0.229 | ||||
| k | 1.190 - 1.390 | 0.047 - 0.055 | ||||
| b | 0.350 - 0.450 | 0.014 - 0.018 | ||||
| e | 1.270TYP. | 0.050TYP. | ||||
| L | 0.559 - 0.711 | 0.022 - 0.028 | ||||
| L1 | 0.424 - 0.576 | 0.017 - 0.023 | ||||
| H | 0.574 - 0.726 | 0.023 - 0.029 | ||||
| 10 - 12 | 10 - 12 | |||||
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