N Channel Power MOSFET Siliup SP015N13GHTQ 150V with Low On Resistance and Fast Switching Capability
Price:
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MOQ:
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Delivery Time:
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Product Description
Product Overview
The SP015N13GHTQ is a 150V N-Channel Power MOSFET from Siliup Semiconductor Technology Co. Ltd. Engineered with advanced split gate trench technology, this MOSFET offers fast switching speeds, low gate charge, and low RDS(on). It is suitable for power switching applications, DC-DC converters, and power management systems. The device is 100% tested for single pulse avalanche energy.
Product Attributes
- Brand: Siliup Semiconductor Technology Co. Ltd.
- Product Code: SP015N13GHTQ
- Marking: 015N13GH
- Package Type: TO-220-3L
- Channel Type: N-Channel
Technical Specifications
| Parameter | Symbol | Test Condition | Min | Typ | Max | Unit |
| Product Summary | ||||||
| Drain-Source Voltage | V(BR)DSS | 150 | V | |||
| On-Resistance | RDS(on)TYP | @10V | 13 | m | ||
| Continuous Drain Current | ID | 60 | A | |||
| Absolute Maximum Ratings | ||||||
| Drain-Source Voltage | VDS | 150 | V | |||
| Gate-Source Voltage | VGS | ±20 | V | |||
| Continuous Drain Current (Tc=25) | ID | 60 | A | |||
| Continuous Drain Current (Tc=100) | ID | 40 | A | |||
| Pulsed Drain Current | IDM | 240 | A | |||
| Single Pulse Avalanche Energy | EAS | 306 | mJ | |||
| Power Dissipation (Tc=25) | PD | 160 | W | |||
| Thermal Resistance Junction-to-Case | RJC | 0.78 | /W | |||
| Storage Temperature Range | TSTG | -55 | 150 | |||
| Operating Junction Temperature Range | TJ | -55 | 150 | |||
| Electrical Characteristics | ||||||
| Drain-Source Breakdown Voltage | BVDSS | ID = 250A, VGS = 0V | 150 | - | - | V |
| Drain Cut-Off Current | IDSS | VDS = 120V, VGS = 0V | - | - | 1 | A |
| Gate Leakage Current | IGSS | VGS = ±20V, VDS = 0V | - | - | ±0.1 | A |
| Gate Threshold Voltage | VGS(th) | VDS = VGS, ID = 250A | 2.0 | 3.0 | 4.0 | V |
| Drain-Source ON Resistance | RDS(ON) | VGS = 10V, ID = 20A | - | 13 | 16 | m |
| Dynamic Characteristics | ||||||
| Input Capacitance | Ciss | VDS = 75V, VGS = 0V, f = 1.0MHz | - | 2230 | - | pF |
| Output Capacitance | Coss | - | 293 | - | ||
| Reverse Transfer Capacitance | Crss | - | 22 | - | ||
| Total Gate Charge | Qg | VDS=75V , VGS=10V , ID=20A | - | 30 | - | nC |
| Gate-Source Charge | Qgs | - | 5.8 | - | ||
| Gate-Drain Charge | Qg d | - | 7 | - | ||
| Switching Characteristics | ||||||
| Turn-On Delay Time | td(on) | VGS = 10V, VDS = 50V, ID = 20A RG = 6 | - | 13 | - | nS |
| Rise Time | tr | - | 25 | - | ||
| Turn-Off Delay Time | td(off) | - | 31 | - | ||
| Fall Time | tf | - | 25 | - | ||
| Drain-Source Body Diode Characteristics | ||||||
| Source-Drain Diode Forward Voltage | VSD | IS = 1A, VGS = 0V | - | - | 1.2 | V |
| Maximum Body-Diode Continuous Current | IS | - | - | 60 | A | |
| Body Diode Reverse Recovery Time | Trr | IS=20A, di/dt=100A/us, TJ=25 | - | 65 | - | nS |
| Body Diode Reverse Recovery Charge | Qrr | - | 180 | - | nC | |
Package Information
TO-220-3L Package Dimensions
| Symbol | Dimensions In Millimeters | Dimensions In Inches | ||
| Min. | Max. | Min. | Max. | |
| A | 4.400 | 4.600 | 0.173 | 0.181 |
| A1 | 2.250 | 2.550 | 0.089 | 0.100 |
| b | 0.710 | 0.910 | 0.028 | 0.036 |
| b1 | 1.170 | 1.370 | 0.046 | 0.054 |
| c | 0.330 | 0.650 | 0.013 | 0.026 |
| c1 | 1.200 | 1.400 | 0.047 | 0.055 |
| D | 9.910 | 10.250 | 0.390 | 0.404 |
| E | 8.950 | 9.750 | 0.352 | 0.384 |
| E1 | 12.650 | 13.050 | 0.498 | 0.514 |
| e | 2.540 TYP. | 0.100 TYP. | ||
| e1 | 4.980 | 5.180 | 0.196 | 0.204 |
| F | 2.650 | 2.950 | 0.104 | 0.116 |
| H | 7.900 | 8.100 | 0.311 | 0.319 |
| h | 0.000 | 0.300 | 0.000 | 0.012 |
| L | 12.900 | 13.400 | 0.508 | 0.528 |
| L1 | 2.850 | 3.250 | 0.112 | 0.128 |
| V | 6.900 REF. | 0.276 REF. | ||
| 3.400 | 3.800 | 0.134 | 0.150 |
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