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China SP60N03GHTQ Power MOSFET 60V N Channel Featuring Low RDSon and Fast Switching for Power Applications for sale

SP60N03GHTQ Power MOSFET 60V N Channel Featuring Low RDSon and Fast Switching for Power Applications

Price Negotiable
Price: Negotiable
MOQ: Negotiable
Delivery Time: Negotiable
Product Description

Product Overview

The SP60N03GHTQ is a 60V N-Channel Power MOSFET from Siliup Semiconductor Technology Co. Ltd. It features fast switching, low gate charge, and low RDS(on), leveraging advanced split gate trench technology. This MOSFET is designed for power switching applications, including hard switched and high-frequency circuits, as well as uninterruptible power supplies. It has undergone 100% single pulse avalanche energy testing.

Product Attributes

  • Brand: Siliup Semiconductor Technology Co. Ltd.
  • Product Code: SP60N03GHTQ
  • Device Code: 60N03GH
  • Package: TO-220-3L
  • Technology: Advanced Split Gate Trench Technology

Technical Specifications

Parameter Symbol Test Condition Min Typ Max Unit
Product Summary
V(BR)DSS V(BR)DSS 60 V
RDS(on)TYP RDS(on) @10V 3.7 m
ID ID 140 A
Absolute Maximum Ratings
Drain-Source Voltage VDSS 60 V
Gate-Source Voltage VGSS 20 V
Continuous Drain Current (Tc=25C) ID 140 A
Continuous Drain Current (Tc=100C) ID 95 A
Pulse Drain Current Tested IDM 560 A
Single Pulse Avalanche Energy1 EAS 784 mJ
Power Dissipation (Tc=25C) PD 145 W
Thermal Resistance Junction-to-Case RJC 0.86 C/W
Maximum Junction Temperature TJ -55 150 C
Storage Temperature Range TSTG -55 150 C
Electrical Characteristics
Drain-Source Breakdown Voltage BVDSS VGS=0V, ID=250mA 60 - - V
Zero Gate Voltage Drain Current IDSS VDS=48V, VGS=0V - - 1 uA
Gate Leakage Current IGSS VGS=20V, VDS=0V - - 100 nA
Gate Threshold Voltage VGS(th) VDS=VGS, ID=250uA 2 2.5 4 V
Drain-Source On-state Resistance RDS(ON) VGS=10V, ID=20A - 3.7 4.7 m
Input Capacitance Ciss VGS=0V, VDS=30V, F=1MHz - 4250 - pF
Output Capacitance Coss - 975 - pF
Reverse Transfer Capacitance Crss - 41 - pF
Total Gate Charge Qg VDS=30V, VGS=10V, ID=20A - 42 - nC
Gate-Source Charge Qgs - 12 - nC
Gate-Drain Charge Qgd - 10 - nC
Turn-On Delay Time td(on) VDD=30V, ID=20A, VGS=10V, RG=3 - 13.5 - nS
Rise Time tr - 96 - nS
Turn-Off Delay Time td(off) - 40 - nS
Fall Time tf - 115 - nS
Source-Drain Diode Forward Voltage VSD IS=1A, TJ=25 - - 1.2 V
Maximum Body-Diode Continuous Current IS - - 140 A
Reverse Recovery Time trr IS=60 A, di/dt=100 A/s, TJ=25 - 35 - nS
Reverse Recovery Charge Qrr - 30 - nC

Package Information (TO-220-3L)

Symbol Dimensions In Millimeters Dimensions In Inches
Min. Max. Min. Max.
A 4.400 4.600 0.173 0.181
A1 2.250 2.550 0.089 0.100
b 0.710 0.910 0.028 0.036
b1 1.170 1.370 0.046 0.054
c 0.330 0.650 0.013 0.026
c1 1.200 1.400 0.047 0.055
D 9.910 10.250 0.390 0.404
E 8.950 9.750 0.352 0.384
E1 12.650 13.050 0.498 0.514
e 2.540 (TYP.) 0.100 (TYP.)
e1 4.980 5.180 0.196 0.204
F 2.650 2.950 0.104 0.116
H 7.900 8.100 0.311 0.319
h 0.000 0.300 0.000 0.012
L 12.900 13.400 0.508 0.528
L1 2.850 3.250 0.112 0.128
V 6.900 (REF.) 0.276 (REF.)
3.400 3.800 0.134 0.150

Note 1: The test condition for EAS is VDD=30V, VGS=10V, L=0.5mH, RG=25.


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Company Hefei Purple Horn E-Commerce Co., Ltd.
Location Room 1306B, Building A, Xindi Center, Qimen Road, Hefei City, Anhui Province
Contact Person Sellina

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