100V N Channel MOSFET Siliup SP010N04AGHTQ with Advanced Split Gate Trench Technology and High Current

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Product Description

Product Overview

The SP010N04AGHTQ is a 100V N-Channel Power MOSFET from Siliup Semiconductor Technology Co. Ltd. It features fast switching, low gate charge, and low RDS(on) thanks to its advanced split gate trench technology. This MOSFET is 100% single pulse avalanche energy tested and is suitable for power switching applications, DC-DC converters, and power management systems. It comes in a TO-220-3L package.

Product Attributes

Brand: Siliup Semiconductor Technology Co. Ltd.
Product Code: SP010N04AGHTQ
Technology: Advanced Split Gate Trench Technology
Channel Type: N-Channel
Package: TO-220-3L (1:G 2:D 3:S)

Technical Specifications

Parameter	Symbol	Test Condition	Min	Typ	Max	Unit
Drain-Source Voltage	VDS				100	V
Gate-Source Voltage	VGS				20	V
Continuous Drain Current (Tc=25)	ID				130	A
Continuous Drain Current (Tc=100)	ID				90	A
Pulsed Drain Current	IDM				520	A
Single Pulse Avalanche Energy	EAS	VDD=50V,VGS=10V,L=0.5mH,RG=25			841	mJ
Power Dissipation (Tc=25)	PD				180	W
Thermal Resistance Junction-to-Case	RJC			0.69		/W
Storage Temperature Range	TSTG		-55		150
Operating Junction Temperature Range	TJ		-55		150
Drain-Source Breakdown Voltage	BVDSS	ID = 250A, VGS = 0V	100	-	-	V
Drain Cut-Off Current	IDSS	VDS = 80V, VGS = 0V	-	-	1	uA
Gate Leakage Current	IGSS	VGS = 20V, VDS = 0V	-	-	100	nA
Gate Threshold Voltage	VGS(th)	VDS = VGS, ID = 250A	2	3	4	V
Drain-Source ON Resistance	RDS(ON)	VGS = 10V, ID = 30A	-	4.2	5.3	m
Input Capacitance	Ciss	VDS =50V, VGS = 0V, f = 1.0MHz	-	4251	-	pF
Output Capacitance	Coss		-	658	-	pF
Reverse Transfer Capacitance	Crss		-	26	-	pF
Total Gate Charge	Qg	VDS=50V , VGS=10V , ID=20A	-	69	-	nC
Gate-Source Charge	Qgs		-	24	-	nC
Gate-Drain Charge	Qg		-	18	-	nC
Turn-On Delay Time	td(on)	VGS = 10V, VDS = 50V, RL=2.5 , RG = 3.0	-	12	-	nS
Rise Time	tr		-	23	-
Turn-Off Delay Time	td(off)		-	37	-	nS
Fall Time	tf		-	16	-	nS
Source-Drain Diode Forward Voltage	VSD	VGS=0V , IS=1A , TJ=25	-	-	1.2	V
Maximum Body-Diode Continuous Current	IS		-	-	130	A
Reverse Recovery Time	Trr	IS=20A, di/dt=100A/us, TJ=25	-	65	-	nS
Reverse Recovery Charge	Qrr		-	126	-	nC

Package Information (TO-220-3L)

Symbol	Dimensions In Millimeters	Dimensions In Inches
	Min.	Max.	Min.	Max.
A	4.400	4.600	0.173	0.181
A1	2.250	2.550	0.089	0.100
b	0.710	0.910	0.028	0.036
b1	1.170	1.370	0.046	0.054
c	0.330	0.650	0.013	0.026
c1	1.200	1.400	0.047	0.055
D	9.910	10.250	0.390	0.404
E	8.950	9.750	0.352	0.384
E1	12.650	13.050	0.498	0.514
e	2.540 TYP.	0.100 TYP.
e1	4.980	5.180	0.196	0.204
F	2.650	2.950	0.104	0.116
H	7.900	8.100	0.311	0.319
h	0.000	0.300	0.000	0.012
L	12.900	13.400	0.508	0.528
L1	2.850	3.250	0.112	0.128
V	6.900 REF.	0.276 REF.
	3.400	3.800	0.134	0.150