20V P Channel MOSFET Low RDS on Siliup SP2004KNCT for Power Switching and Portable Electronics
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Product Description
Product Overview
The SP2004KNCT is a 20V P-Channel MOSFET from Siliup Semiconductor Technology Co. Ltd., designed for surface mount applications. It features low RDS(on) and operates at low logic level gate drive, making it suitable for load/power switching, interfacing, logic switching, and battery management in ultra-small portable electronics. The device is ESD protected to 2kV.
Product Attributes
- Brand: Siliup Semiconductor Technology Co. Ltd.
- Product Code: SP2004KNCT
- Channel Type: P-Channel
- Package: DFN1006-3B
- Marking: 04K
Technical Specifications
| Parameter | Symbol | Condition | Value | Unit |
|---|---|---|---|---|
| Product Summary | ||||
| Drain-Source Voltage | V(BR)DSS | -20 | V | |
| Drain-Source On-Resistance (Max) | RDS(on)MAX | @ -4.5V | 520 | m |
| Drain-Source On-Resistance (Max) | RDS(on)MAX | @ -2.5V | 700 | m |
| Continuous Drain Current | ID | -0.66 | A | |
| Absolute Maximum Ratings (Ta=25 unless otherwise noted) | ||||
| Drain-Source Voltage | VDS | -20 | V | |
| Gate-Source Voltage | VGS | 10 | V | |
| Continuous Drain Current | ID | -0.66 | A | |
| Pulsed Drain Current | IDM | -1.2 | A | |
| Power Dissipation | PD | 0.15 | W | |
| Thermal Resistance Junction to Ambient | RJA | 833 | /W | |
| Junction Temperature | TJ | 150 | ||
| Storage Temperature | TSTG | -55~ +150 | ||
| Electrical Characteristics (TA=25 oC, unless otherwise noted) | ||||
| Drain-source breakdown voltage | V(BR)DSS | VGS = 0V, ID =-250A | -20 | V |
| Zero gate voltage drain current | IDSS | VDS =-16V,VGS = 0V | -1 | A |
| Gate-body leakage current | IGSS | VGS = 10VVDS =0V | 10 | A |
| Gate threshold voltage | VGS(th) | VDS =VGS, ID =-250A | -0.35 to -1 | V |
| Drain-source on-resistance | RDS(on) | VGS = -4.5V, ID = -0.5A | 0.52 | |
| Drain-source on-resistance | RDS(on) | VGS = -2.5V, ID = -0.2A | 0.7 | |
| Drain-source on-resistance | RDS(on) | VGS = -1.8V, ID = -0.1A | 0.95 | |
| Input Capacitance | Ciss | VDS =-16V,VGS =0V,f =1MHz | 113 | pF |
| Output Capacitance | Coss | VDS =-16V,VGS =0V,f =1MHz | 15 | pF |
| Reverse Transfer Capacitance | Crss | VDS =-16V,VGS =0V,f =1MHz | 9 | pF |
| Turn-on delay time | td(on) | VDS=-10V,ID=-200mA, VGS=-4.5V,RG=10 | 9 | ns |
| Turn-on rise time | tr | VDS=-10V,ID=-200mA, VGS=-4.5V,RG=10 | 5.7 | ns |
| Turn-off delay time | td(off) | VDS=-10V,ID=-200mA, VGS=-4.5V,RG=10 | 32.6 | ns |
| Turn-off fall time | tf | VDS=-10V,ID=-200mA, VGS=-4.5V,RG=10 | 20.3 | ns |
| Diode Forward voltage | VSD | VGS =0V, IS=-0.5 A | -1.2 | V |
| Package Information | ||||
| Package Type | DFN1006-3B | |||
| Symbol | Dimensions (mm) Min. | Dimensions (mm) Max. | ||
| A | 0.36 | 0.40 | ||
| A1 | 0 | 0.05 | ||
| b | 0.45 | 0.55 | ||
| b1 | 0.1 | 0.2 | ||
| c | 0.08 | 0.18 | ||
| D | 0.95 | 1.05 | ||
| D1 | 0.65 | |||
| E | 0.55 | 0.65 | ||
| E1 | 0.325 | |||
| L | 0.2 | 0.3 | ||
| L1 | 0.2 | 0.3 | ||
| R | 0.05 | 0.15 | ||
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Hefei Purple Horn E-Commerce Co., Ltd.
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