30V P Channel MOSFET Siliup SP30P08P8 with 15A continuous drain current and avalanche energy testing

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Product Description

Product Overview

The SP30P08P8 is a 30V P-Channel MOSFET from Siliup Semiconductor Technology Co. Ltd. It offers fast switching, low gate charge, and low RDS(on) with a continuous drain current of -15A. This MOSFET is designed for power switching applications, including hard switched and high-frequency circuits, and uninterruptible power supplies. It features 100% single pulse avalanche energy testing.

Product Attributes

Brand: Siliup Semiconductor Technology Co. Ltd.
Product Code: SP30P08P8
Channel Type: P-Channel
Marking: 30P08

Technical Specifications

Parameter	Symbol	Conditions	Min.	Typ.	Max.	Units
Product Summary
Drain-Source Voltage	V(BR)DSS				-30	V
RDS(on) Typ.	RDS(on)	@-10V		8	m
RDS(on) Typ.	RDS(on)	@-4.5V		10.5	m
Continuous Drain Current	ID				-15	A
Absolute Maximum Ratings (Ta=25, unless otherwise noted)
Drain-Source Voltage	VDS				-30	V
Gate-Source Voltage	VGS				20	V
Continuous Drain Current	ID				-15	A
Pulsed Drain Current	IDM				-60	A
Single pulsed avalanche energy	EAS	1			36	mJ
Power Dissipation	PD				2.5	W
Junction-to-Ambient Thermal Resistance	RJA				50	/W
Storage Temperature Range	TSTG		-55		150
Operating Junction Temperature Range	TJ		-55		150
Electrical Characteristics (Ta=25, unless otherwise noted)
Drain-Source Breakdown Voltage	BVDSS	VGS=0V , ID=-250uA	-30			V
Drain-Source Leakage Current	IDSS	VDS=-24V , VGS=0V			-1	uA
Gate-Source Leakage Current	IGSS	VGS=20V , VDS=0V			100	nA
Gate Threshold Voltage	VGS(th)	VGS=VDS , ID =-250uA	-1.0	-1.5	-2.5	V
Static Drain-Source On-Resistance	RDS(ON)	VGS=-10V , ID=-15A		8	12	m
Static Drain-Source On-Resistance	RDS(ON)	VGS=-4.5V , ID=-10A		10.5	15	m
Dynamic Characteristics
Input Capacitance	Ciss	VDS=-15V , VGS=0V , f=1MHz		2900		pF
Output Capacitance	Coss			410		pF
Reverse Transfer Capacitance	Crss			280		pF
Total Gate Charge	Qg	VDS=-15V , VGS=-10V , ID=-10A		48		nC
Gate-Source Charge	Qgs			12		nC
Gate-Drain Charge	Qgd			14		nC
Switching Characteristics
Turn-On Delay Time	Td(on)	VDD=-15V,VGS=-10V,RG=3, ID=-10A		15		nS
Rise Time	Tr			11		nS
Turn-Off Delay Time	Td(off)			44		nS
Fall Time	Tf			21		nS
Diode Characteristics
Diode Forward Voltage	VSD	VGS=0V , IS=-1A			-1.2	V
Maximum Body-Diode Continuous Current	IS				-15	A
Reverse recover time	Trr	IS=-10A, di/dt=100A/us, TJ=25		42		nS
Reverse recovery charge	Qrr			19		nC
Package Information
Package Type				SOP-8L
Dimensions (A)		Millimeters	1.35		1.75
Dimensions (A1)		Millimeters	0.10		0.25
Dimensions (A2)		Millimeters	1.35		1.55
Dimensions (b)		Millimeters	0.33		0.51
Dimensions (c)		Millimeters	0.17		0.25
Dimensions (D)		Millimeters	4.80		5.00
Dimensions (e)		REF.		1.27
Dimensions (E)		Millimeters	5.80		6.20
Dimensions (E1)		Millimeters	3.80		4.00
Dimensions (L)		Millimeters	0.40		1.27
Dimensions ()		Degrees	0		8
Order Information
Device		Package	Unit/Tape
SP30P08P8		SOP-8L	4000